arXiv subjects

Kok Wai Chan

Publications and source records attributed to Kok Wai Chan.

24 records · Page 2Linked to original sources

arXiv2018

Smart Analytical Signature Verification For DSP Applications

Signature verification is an authentication technique that considers handwritten signature as a biometric. From a biometric perspective this project made use of automatic means through an integration of intelligent algorithms to perform signal enhancement function such as filtering and smoothing for optimization in conventional biometric systems. A handwritten signature is a 1D Daubechies wavelet signal (db4) that utilizes Discrete Wavelet Transform (DWT) and Discrete Cosine Transform (DCT) collectively to create a feature dataset with d-dimensional space. In the proposed work the statistical features characteristics are extracted from each particular signature per data source. Two databases called Signature Verification Competition (SVC) 2004 database and SUBCORPUS 100 MCYT Bimodal database are used to cooperate with the design algorithm. Furthermore dimension reduction technique is applied to the large feature vectors. A system model is trained and evaluated using the support vector machine (SVM) classifier algorithm. Hence an equal error rate (EER) of 8.7 percent and an average correct verification rate of 91.3 percent

eess.SP↗

arXiv2018

Smart GSM Based Home Automation System

This research work investigates the potential of Full Home Control, which is the aim of the Home Automation Systems in near future. The analysis and implementation of the home automation technology using Global System for Mobile Communication (GSM) modem to control home appliances such as light, conditional system, and security system via Short Message Service (SMS) text messages is presented in this paper. The proposed research work is focused on the functionality of the GSM protocol, which allows the user to control the target system away from residential using the frequency bandwidths. The concept of serial communication and AT-commands has been applied towards the development of the smart GSM-based home automation system. Homeowners will be able to receive feedback status of any home appliances under control whether switched on or off remotely from their mobile phones. PIC16F887 microcontroller with the integration of GSM provides the smart automated house system with the desired baud rate of 9600 bps. The proposed prototype of GSM based home automation system was implemented and tested with a maximum of four loads and shows the accuracy of greater or equal 98%.

eess.SP↗

arXiv2018

Adaptive Intelligent Spider Robot

This paper presents the development of an adaptive intelligent spider robot. With the incorporation of sensors, the four-legged spider robot is able to monitor the environment wirelessly. A new auto-station adaptation National Instrument (NI) controller in the application for an intelligent robot is proposed. The research work will solve the weak adaptive ability of conventional existing robot. The proposed project proposes a self-adaptive smart spider robot that functions without human interfacing. The proposed design utilizes the control scheme with National Instruments (NI) LabVIEW to produce a smart portable system. Furthermore, the adaptive intelligent spider robot easily adapts to new situations when facing obstacles. The design is carried out using feedback loop schematic LabVIEW interfacing with the smart controller and incorporation of GH-311 Ultrasonic Sensor to detect any obstacle in front of the robot, GH-312 Smoke Sensor which use to detect smoke in the particular area and LM35 Temperature sensor to get the temperature for the surround. The proposed module was designed and implemented using movable wireless Router Module TP-Link TL-MR3420 Router transceiver for device communication. The robot was tested and analyzed showing the system efficiency of above 95%, which is competent in robotic applications

cs.RO↗

arXiv2016

Three-waveform bidirectional pumping of single electrons with a silicon quantum dot

Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon quantum dot single-electron pump with radio frequency control over the transparencies of entrance and exit barriers as well as the dot potential. We show that our driving protocol leads to robust bidirectional pumping: one can conveniently reverse the direction of the quantized current by changing only the phase shift of one driving waveform with respect to the others. We also study the improvement in the robustness of the current quantization owing to the introduction of three control voltages in comparison with the two-waveform driving. We anticipate that this pumping technique may be used in the future to perform error counting experiments by pumping the electrons into and out of a reservoir island monitored by a charge sensor.

cond-mat.mes-hall↗

arXiv2015

Electron counting in a silicon single-electron pump

We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million. Single-shot detection of electrons pumped into a reservoir dot is performed using a capacitively coupled single-electron transistor. We extract the full probability distribution of the transfer of n electrons per pumping cycle for n = 0, 1, 2, 3, and 4. We find that the probabilities extracted from the counting experiment are in agreement with direct current measurements in a broad range of dc electrochemical potentials of the pump. The electron counting technique is also used to confirm the improving robustness of the pumping mechanism with increasing electrostatic confinement of the quantum dot.

cond-mat.mes-hall↗

arXiv2010

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.

cond-mat.mes-hall↗