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Konrad Walus

Publications and source records attributed to Konrad Walus.

11 recordsLinked to original sources

Implementing a Quantum CNOT and Quantum Memory Using a Quantum-Dot Cellular Automata Array

In this work, we develop a method to use Quantum- Dot Cellular Automata (QCA) for universal quantum computing. This method is based conceptually on refocusing in NMR systems. We show how an array of QCA cells can be used for isolated single qubit, as well as multi-qubit operations, such as the CNOT, by dividing the cells into active and passive sets such that the active cells undergo the transform while passive cells hold their quantum states. The same technique is used for developing a multi-qubit quantum memory. The effect of imperfect control parameters is discussed and the total time for a typical quantum operation is given. Using this approach, different quantum gates are implemented using pulse sequences applied to the QCA cells via control fields and potentials, while the layout remains the same.

quant-ph

Atomic Defect-Aware Physical Design of Silicon Dangling Bond Logic on the H-Si(100)2x1 Surface

Although fabrication capabilities of Silicon Dangling Bonds have rapidly advanced from manual labor-driven laboratory work to automated manufacturing in just recent years, sub-nanometer substrate defects still pose a hindrance to production due to the need for atomic precision. In essence, unpassivated or missing surface atoms, contaminants, and structural deformations disturb the fabricated logic or prevent its realization altogether. Moreover, design automation techniques in this domain have not yet adopted any defect-aware behavior to circumvent the present obstacles. In this paper, we derive a surface defect model for design automation from experimentally verified defect types that we apply to identify sensitivities in an established gate library in an effort to generate more robust designs. Furthermore, we present an automatic placement and routing algorithm that considers scanning tunneling microscope data obtained from physical experiments to lay out dot-accurate circuitry that is resilient against the presence of atomic surface defects. This culminates in a holistic evaluation on surface data of varying defect rates that enables us to quantify the severity of such defects. We project that fabrication capabilities must achieve defect rates of around 0.1 %, if charged defects can be completely eliminated, or < 0.1 %, otherwise. This realization sets the pace for future efforts to scale up this promising circuit technology.

physics.app-ph

Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness

Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis of SiDB circuits that reach the size of $32\times10^3\,\text{nm}^{2}$ -- orders of magnitude more complex than their hand-designed counterparts. However, current SiDB simulation engines do not take defects into account, which is important to consider for these sizable systems. This work proposes a formulation for incorporating fixed-charge simulation into established ground state models to cover an important class of defects that has a non-negligible effect on nearby SiDBs at the $10\,\text{nm}$ scale and beyond. The formulation is validated by implementing it into SiQAD's simulation engine and computationally reproducing experiments on multiple defect types, revealing a high level of accuracy. The new capability is applied towards studying the tolerance of several established logic gates against the introduction of a single nearby defect to establish the corresponding minimum required clearance. These findings are compared against existing metrics to form a foundation for logic robustness studies.

cond-mat.mes-hall

QuickSim: Efficient and Accurate Physical Simulation of Silicon Dangling Bond Logic

Silicon Dangling Bonds have established themselves as a promising competitor in the field of beyond-CMOS technologies. Their integration density and potential for energy dissipation advantages of several orders of magnitude over conventional circuit technologies sparked the interest of academia and industry alike. While fabrication capabilities advance rapidly and first design automation methodologies have been proposed, physical simulation effectiveness has yet to keep pace. Established algorithms in this domain either suffer from exponential runtime behavior or subpar accuracy levels. In this work, we propose a novel algorithm for the physical simulation of Silicon Dangling Bond systems based on statistical methods that offers both a time-to-solution and an accuracy advantage over the state of the art by more than one order of magnitude and a factor of more than three, respectively, as demonstrated by an exhaustive experimental evaluation.

physics.app-ph

Automated Atomic Silicon Quantum Dot Circuit Design via Deep Reinforcement Learning

Robust automated design tools are crucial for the proliferation of any computing technology. We introduce the first automated design tool for the silicon dangling bond quantum dot computing technology, which is an extremely versatile and flexible single-atom computing circuitry framework. The automated designer is capable of navigating the complex, hyperdimensional design spaces of arbitrarily sized design areas and truth tables by employing a tabula rasa double-deep Q-learning reinforcement learning algorithm. Robust policy convergence is demonstrated for a wide range of two-input, one-output logic circuits and a two-input, two-output half-adder, designed with an order of magnitude fewer SiDBs in several orders of magnitude less time than the only other half-adder demonstrated in the literature. We anticipate that reinforcement learning-based automated design tools will accelerate the development of the SiDB quantum dot computing technology, leading to its eventual adoption in specialized computing hardware.

cs.ET

PoisSolver: a Tool for Modelling Silicon Dangling Bond Clocking Networks

Advancements in the fabrication of silicon dangling bonds (SiDBs) reveal a potential platform for clocked field coupled nanocomputing structures. This work introduces PoisSolver, a finite element simulator for investigating clocked SiDB systems in the SiQAD design tool. Three clocking schemes borrowed from prior work on quantum-dot cellular automata are examined as potential building blocks for a general clocking framework for SiDB circuits. These clocking schemes are implemented in SiQAD, and power estimates are performed with geometrically agnostic methods to characterise each clocking scheme. Clocking schemes using a 14 nm technology node are found to dissipate 10-100 uW cm-2 at 1 GHz and 1-10 W cm-2 at 1 THz.

cond-mat.mes-hall

Limits of Adiabatic Clocking in Quantum-dot Cellular Automata

Ultimate bounds on the maximum operating frequency of networks of quantum dot cellular automata devices have yet to be established. We consider the adiabaticity of such networks in the two-state approximation where clocking is achieved via modulation of the inter-dot tunneling barriers. Estimates of the maximum operating frequency that would allow a 99% probability of observing the correct logical output are presented for a subset of the basic components used in QCA network design. Simulations are performed both in the coherent limit and for a simple dissipative model. We approach the problem of tunnel-based clocking from the perspective of quantum annealing, and present an improved clocking schedule allowing for faster operation. Using an analytical solution for driven QCA wires, we show that the maximum operating frequency in the coherent limit falls off with the square of the wire length, potentially limiting the size of clocked regions.

quant-ph

SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits

This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational logic. Several simulation tools are included, each able to inform the designer on various aspects of their designs: a ground-state electron configuration finder, a non-equilibrium electron dynamics simulator, and an electric potential landscape solver with clocking electrode support. Simulations have been compared against past experimental results to inform the electron population estimation and dynamic behavior. New logic gates suitable for this platform have been designed and simulated, and a clocked wire has been demonstrated. This work paves the way for the exploration of the vast and fertile design space of atomic silicon dangling bond quantum dot circuits.

cond-mat.mes-hall

Initiating and monitoring the evolution of single electrons within atom-defined structures

Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on the hydrogen terminated silicon surface. By varying the probe-sample separation we mechanically manipulate the equilibrium position of individual surface silicon atoms and use this to directly switch the charge state of individual DBs. Because this mechanism is based on short range interactions and can be performed without applied bias voltage, we maintain both site-specific selectivity and single-electron control. We extract the short range forces involved with this mechanism by subtracting the long range forces acquired on a dimer vacancy site. As a result of relaxation of the silicon lattice to accommodate negatively charged DBs we observe charge configurations of DB structures that remain stable for many seconds at 4.5 K. Subsequently we use charge manipulation to directly prepare the ground state and metastable charge configurations of DB structures composed of up to six atoms.

cond-mat.mes-hall

Algorithms for Embedding Quantum-Dot Cellular Automata Networks onto a Quantum Annealing Processor

Advancements in computing based on qubit networks, and in particular the flux-qubit processor architecture developed by D-Wave System's Inc., have enabled the physical simulation of quantum-dot cellular automata (QCA) networks beyond the limit of classical methods. However, the embedding of QCA networks onto the available processor architecture is a key challenge in preparing such simulations. In this work, two approaches to embedding QCA circuits are characterized: a dense placement algorithm that uses a routing method based on negotiated congestion; and a heuristic method implemented in D-Wave's Solver API package. A set of benchmark QCA networks is used to characterise the algorithms and a stochastic circuit generator is employed to investigate the performance for different processor sizes and active flux-qubit yields.

quant-ph

Consequences of Many-cell Correlations in Treating Clocked Quantum-dot Cellular Automata Circuits

Quantum-dot Cellular Automata (QCA) provides a basis for classical computation without transistors. Many simulations of QCA rely upon the so-called Intercellular Hartree Approximation (ICHA), which neglects the possibility of entanglement between cells. Here, we present computational results that treat small groups of QCA cells with a Hamiltonian analogous to a quantum mechanical Ising-like spin chain in a transverse field, including the effects of intercellular entanglement. When energy relaxation is included in the model, we find that intercellular entanglement changes the qualitative behaviour of the system, and new features appear. In clocked QCA, isolated groups of active cells experience oscillations in their polarization states as information propagates. Additionally, energy relaxation tends to bring groups of cells to an unpolarized ground state. This contrasts with the results of previous simulations which employed the ICHA. The ICHA is a valid approximation in the limit of very low tunneling rates, which can be realized in lithographically defined quantum-dots. However, in molecular and atomic implementations of QCA, entanglement will play a greater role. The degree to which entanglement poses a problem for memory and clocking depends upon the interaction of the system with its environment, as well as the system's internal dynamics.

cond-mat.mes-hall