arXiv subjects

Kornelius Nielsch

Publications and source records attributed to Kornelius Nielsch.

At least 37 records · Page 2Linked to original sources

arXiv2022

Wafer-Scale Growth of Sb2Te3 Films via Low-Temperature ALD for Self-Powered Photodetector

In this work, we demonstrate the performance of a silicon-compatible high-performance self-powered photodetector.A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (Sb2Te3) thin film and the n-type silicon (Si) substrates. A Sb2Te3 film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4-inch wafer was achieved by atomic layer deposition at 80 °C using (Et3Si)2Te and SbCl3 as precursors. The processed photodetectors have a low dark current (~20 pA), a high responsivity of (~4.3 Ampere per Watt at 405 nm and ~150 milli-Ampere per Watt at ~1550 nm), a peak detectivity of ~1.65*10^14 Jones, and a quick rise time of ~98 us under zero bias voltage. Density functional theory calculations reveal a narrow, near-direct, type-II bandgap at the heterointerface that supports a strong built-in electric field leading to efficient separation of the photogenerated carriers. The devices have long-term air stability and efficient switching behavior even at elevated temperatures. These high-performance self-powered p-Sb2Te3/n-Si heterojunction photodetectors have immense potential to become reliable technological building blocks for a plethora of innovative applications in next-generation optoelectronics, silicon-photonics, chip-level sensing, and detection.

physics.app-ph↗

arXiv2022

On Curie temperature of B20-MnSi films

B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By controlling the Mn thickness and annealing parameters, the pure MnSi phase of polycrystalline and textured nature as well as the mixed phase of MnSi and MnSi1.7 are obtained. Surprisingly, all these MnSi films show an increased Curie temperature of up to around 43 K. The Curie temperature is likely independent of the structural parameters within our accessibility including the film thickness above a threshold, strain, cell volume and the mixture with MnSi1.7. However, a pronounced phonon softening is observed for all samples, which can tentatively be attributed to slight Mn excess from stoichiometry, leading to the increased Curie temperature.

cond-mat.mtrl-sci↗

arXiv2022

What is the speed limit of martensitic transformations?

Structural martensitic transformations enable various applications, which range from high stroke actuation and sensing to energy efficient magnetocaloric refrigeration and thermomagnetic energy harvesting. All these emerging applications benefit from a fast transformation, but up to now the speed limit of martensitic transformations has not been explored. Here, we demonstrate that a martensite to austenite transformation can be completed in under ten nanoseconds. We heat an epitaxial Ni-Mn-Ga film with a laser pulse and use synchrotron diffraction to probe the influence of initial sample temperature and overheating on transformation rate and ratio. We demonstrate that an increase of thermal energy drives this transformation faster. Though the observed speed limit of 2.5 x 10^{27} (Js)^{-1} per unit cell leaves plenty of room for a further acceleration of applications, our analysis reveals that the practical limit will be the energy required for switching. Our experiments unveil that martensitic transformations obey similar speed limits as in microelectronics, which are expressed by the Margolus-Levitin theorem.

cond-mat.mtrl-sci↗

arXiv2022

Investigation of the magnetoelastic coupling anisotropy in the Kitaev material $α$-RuCl$_3$

The Kitaev material $α$-RuCl$_3$ is among the most prominent candidates to host a quantum spin-liquid state endowed with fractionalized excitations. Recent experimental and theoretical investigations have separately revealed the importance of both the magnetoelastic coupling and the magnetic anisotropy, in dependence of the applied magnetic field direction. In this combined theoretical and experimental research, we investigate the anisotropic magnetic and magnetoelastic properties for magnetic fields applied along the main crystallographic axes as well as for fields canted out of the honeycomb plane. We found that the magnetostriction anisotropy is unusually large compared to the anisotropy of the magnetization, which is related to the strong magnetoelastic $\widetilde{Γ'}$-type coupling in our \textit{ab-initio} derived model. We observed large, non-symmetric magnetic anisotropy for magnetic fields canted out of the honeycomb $ab$-plane in opposite directions, namely towards the $+c^*$ or $-c^*$ axes, respectively. The observed directional anisotropy is explained by considering the relative orientation of the magnetic field with respect to the co-aligned RuCl$_6$ octahedra. Magnetostriction measurements in canted fields support this non-symmetric magnetic anisotropy, however these experiments are affected by magnetic torque effects. Comparison of theoretical predictions with experimental findings allow us to recognize the significant contribution of torque effects in experimental setups where $α$-RuCl$_3$ is placed in canted magnetic fields.

cond-mat.str-el↗

arXiv2022

Fluctuation-Dissipation in Thermoelectrics

Thermoelectric materials exhibit correlated transport of charge and heat. The Johnson-Nyquist noise formula $ 4 k_B T R $ for spectral density of voltage fluctuations accounts for fluctuations associated solely with Ohmic dissipation. Applying the fluctuation-dissipation theorem, we generalize the Johnson-Nyquist formula for thermoelectrics, finding an enhanced voltage fluctuation spectral density $4 k_B T R (1 + ZT)$ at frequencies below a thermal cut-off frequency $f_T$, where $ZT$ is the dimensionless thermoelectric material figure of merit. The origin of the enhancement in voltage noise is thermoelectric coupling of temperature fluctuations. We use a wideband ($f_T\sim1$ kHz), integrated thermoelectric micro-device to experimentally confirm our findings. Measuring the $ZT$ enhanced voltage noise, we experimentally resolve temperature fluctuations with an amplitude of $0.8~μ\mathrm{K} \mathrm{Hz}^{-1/2}$ at a mean temperature of 295 K. We find that thermoelectric devices can be used for thermometry with sufficient resolution to measure the fundamental temperature fluctuations described by the fluctuation-dissipation theorem.

cond-mat.mtrl-sci↗

arXiv2021

B20-MnSi films grown on Si(100) substrates with magnetic skyrmion signature

Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, which would be more preferred for practical applications. In this letter, we present the first preparation of B20-MnSi on Si(100) substrates. It is realized by sub-second solid-state reaction between Mn and Si via flash-lamp annealing at ambient pressure. The regrown layer shows an enhanced Curie temperature of 43 K compared with bulk B20-MnSi. The magnetic skyrmion signature is proved in our films by magnetic and transport measurements. The millisecond-range flash annealing provides a promising avenue for the fabrication of Si-based skyrmionic devices.

cond-mat.mtrl-sci↗

arXiv2021

Quartic metal: Spontaneous breaking of time-reversal symmetry due to four-fermion correlations in Ba$_{1-x}$K$_x$Fe$_2$As$_2$

Discoveries of ordered quantum states of matter are of great fundamental interest, and often lead to unique applications. The most well known example -- superconductivity -- is caused by the formation and condensation of pairs of electrons. A key property of superconductors is diamagnetism: magnetic fields are screened by dissipationless currents. Fundamentally, what distinguishes superconducting states from normal states is a spontaneously broken symmetry corresponding to long-range coherence of fermion pairs. Here we report a set of experimental observations in hole doped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ which are not consistent with conventional superconducting behavior. Our specific-heat measurements indicate the formation of fermionic bound states when the temperature is lowered from the normal state. However, for $x \sim 0.8$, instead of the standard for superconductors, zero resistance and diamagnetic screening, for a range of temperatures, we observe the opposite effect: the generation of self-induced magnetic fields measured by spontaneous Nernst effect and muon spin rotation experiments. The finite resistance and the lack of any detectable diamagnetic screening in this state exclude the spontaneously broken symmetry associated with superconducting two-fermion correlations. Instead, combined evidence from transport and thermodynamic measurements indicates that the formation of fermionic bound states leads to spontaneous breaking of time-reversal symmetry above the superconducting transition temperature. These results demonstrate the existence of a broken-time-reversal-symmetry bosonic metal state. In the framework of a multiband theory, such a state is characterized by quartic correlations: the long-range order exists only for {\it pairs} of fermion pairs.

cond-mat.supr-con↗

arXiv2021

Non-reciprocity of spin waves in magnetic nanotubes with helical equilibrium magnetization

Spin waves (SWs) in magnetic nanotubes have shown interesting nonreciprocal properties in their dispersion relation, group velocity, frequency linewidth and attenuation lengths. The reported chiral effects are similar to those induced by the Dzyaloshinskii-Moriya interaction, but originating from the dipole-dipole interaction. Here we show, that the isotropic-exchange interaction can also induce chiral effects in the SW transport; the so-called Berry phase of SWs. We demonstrate that with the application of magnetic fields, the nonreciprocity of the different SW modes can be tuned between the fully dipolar governed and the fully exchange governed cases, as they are directly related to the underlaying equilibrium state. In the helical state, due to the combined action of the two effects every single sign combination of the azimuthal and axial wave vectors leads to different dispersion, allowing for a very sophisticated tuning of the SW transport. A disentanglement of the dipole-dipole and exchange contributions so far was not reported for the SW transport in nanotubes. Furthermore, we propose a device based on coplanar waveguides that would allow to selectively measure the exchange or dipole induced SW nonreciprocities. In the context of magnonic applications, our results might encourage further developments in the emerging field of 3D magnonic devices using curved magnetic membranes.

cond-mat.mes-hall↗

arXiv2020

Fast fourier transform and multi-Gaussian fitting of XRR data to determine the thickness of ALD grown thin films within the initial growth regime

While a linear growth behavior is one of the fingerprints of textbook atomic layer deposition processes, the growth often deviates from that behavior in the initial regime, i.e. the first few cycles of a process. To properly understand the growth behavior in the initial regime is particularly important for applications that rely on the exact thickness of very thin films. The determination of the thicknesses of the initial regime, however, often requires special equipment and techniques that are not always available. We propose a thickness determination method that is based on X-ray reflectivity (XRR) measurements on double layer structures, i.e. substrate/base layer/top layer. XRR is a standard thin film characterization method. Utilizing the inherent properties of fast Fourier transformation in combination with a multi-Gaussian fitting routine permits the determination of thicknesses down to $t \approx 2$ nm. We evaluate the boundaries of our model, which are given by the separation and full width at half maximum of the individual Gaussians. Finally, we compare our results from two layer stacks with data from X-ray fluorescence spectroscopy, which is a standard method for measuring ultra thin films.

cond-mat.mtrl-sci↗

arXiv2020

Efficient and affordable thermomagnetic materials for harvesting low grade waste heat

Industrial processes release substantial quantities of waste heat, which can be harvested to generate electricity. At present, the conversion of low grade waste heat to electricity relies solely on thermoelectric materials, but such materials are expensive and have low thermodynamic efficiencies. Although thermomagnetic materials may offer a promising alternative, their performance remains to be evaluated, thereby hindering their real-world application. Here we evaluate the efficiency and cost effectiveness of thermomagnetic materials that can be used in motors, oscillators and generators for converting waste heat to electricity. Our analysis reveals that up to temperature differences of several 10 K the best thermomagnetic materials outperform thermoelectric materials. Importantly, we find that the price per watt for some thermomagnetic materials are much lower compared to present-day thermoelectrics and can become competitive with conventional power plants. The materials library that we present here enables the selection of the best available thermomagnetic materials for harvesting waste heat and gives guidelines for their future development.

physics.app-ph↗

arXiv2020

Building hierarchical martensite

Martensitic materials show a complex, hierarchical microstructure containing structural domains separated by various types of twin boundaries. Several concepts exist to describe this microstructure on each length scale, however, there is no comprehensive approach bridging the whole range from the nano- up to the macroscopic scale. Here, we describe for a Ni-Mn-based Heusler alloy how this hierarchical microstructure is built from scratch with just one key parameter: the tetragonal distortion of the basic building block at the atomic level. Based on this initial block, we introduce five successive levels of nested building blocks. At each level, a larger building block is formed by twinning the preceding one to minimise the relevant energy contributions locally. This naturally explains the occurrence of different types of twin boundaries. We compare this scale-bridging approach of nested building blocks with experiments in real and reciprocal space. Our approach of nested building blocks is versatile as it can be applied to the broad class of functional materials exhibiting diffusionless transformations.

cond-mat.mtrl-sci↗

arXiv2020

Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl-semimetal Co2MnGa thin films

We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.

cond-mat.mes-hall↗

arXiv2020

All Electrical Access to Topological Transport Features in Mn$_{1.8}$PtSn Films

The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn$_{1.8}$PtSn below the spin reorientation temperature $T_\mathrm{SR} \approx 190$K. The magnitude of the topological Hall effect $ρ_\mathrm{xy}^\mathrm{T} = 8$ n$Ω$m is close to the value reported in bulk Mn$_2$PtSn, and the topological Nernst effect $S_\mathrm{xy}^\mathrm{T} = 115$ nV K$^{-1}$ measured in the same microstructure has a similar magnitude as reported for bulk MnGe ($S_\mathrm{xy}^\mathrm{T} \sim 150$ nV K$^{-1}$), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nano-patterned materials without detrimental magnetization related limitations.

cond-mat.mes-hall↗

arXiv2019

Antiferromagnetic Domain Wall Control via the Surface Spin Flop in Fully Tunable Synthetic Antiferromagnets with Perpendicular Magnetic Anisotropy

Antiferromagnetic (AF) domain walls have recently attracted revived attention, not only in the emerging field of AF spintronics, but also more specifically for offering fast domain wall velocities and dynamic excitations up to the terahertz frequency regime. Here we introduce an approach to nucleate and stabilize an AF domain wall in a synthetic antiferromagnet (SAF). We present experimental and micromagnetic studies of the magnetization reversal in [(Co/Pt)$_{X-1}$/Co/Ir]$_{N-1}$(Co/Pt)$_X$ SAFs, where interface induced perpendicular magnetic anisotropy (PMA) and AF interlayer exchange coupling (IEC) are completely controlled via the individual layer thicknesses within the multilayer stack. By combining strong PMA with even stronger AF IEC, the SAF reveals a collective response to an external magnetic field applied normal to the surface, and we stabilize the characteristic surface spin flop (SSF) state for an even number N of AF-coupled (Co/Pt)$_{X-1}$/Co multilayer blocks. In the SSF state our system provides a well-controlled and fully tunable vertical AF domain wall, easy to integrate as no single crystal substrates are required and with uniform 2D-magnetization in the film plane for further functionalization options, such as for example lateral patterning via lithography.

cond-mat.mtrl-sci↗

arXiv2019

Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt

The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence for crystalline order or spontaneous magnetization in the yttrium iron garnet layer. Nevertheless, we observe a clear magnetoresistance response with a dependence on the magnetic field orientation characteristic for the SMR. We propose two models for the origin of the SMR response in paramagnetic insulator/Pt heterostructures. The first model describes the SMR of an ensemble of non-interacting paramagnetic moments, while the second model describes the magnetoresistance arising by considering the total net moment. Interestingly, our experimental data are consistently described by the net moment picture, in contrast to the situation in compensated ferrimagnets or antiferromagnets.

cond-mat.mes-hall↗

arXiv2019

Focused ion beam modification of non-local magnon-based transport in yttrium iron garnet/platinum heterostructures

We study the impact of Ga ion exposure on the local and non-local magnetotransport response in heterostructures of the ferrimagnetic insulator yttrium iron garnet and platinum. In particular, we cut the yttrium iron garnet layer in between two electrically separated wires of platinum using a Ga ion beam, and study the ensuing changes in the magnetoresistive response. We find that the non-local magnetoresistance signal vanishes when the yttrium iron garnet film between the Pt wires is fully cut, although the local spin Hall magnetoresistance signal remains finite. This observation corroborates the notion that pure spin currents carried by magnons are crucial for the non-local magnetotransport effects observed in magnetic insulator/metal nanostructures.

cond-mat.mes-hall↗

arXiv2018

Magnetoresistance and anomalous Hall effect in micro-ribbons of the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$

Magnetic Weyl semimetals exhibit intriguing transport phenomena due to their non-trivial band structure. Recent experiments in bulk crystals of the shandite-type Co$_3$Sn$_2$S$_2$ have shown that this material system is a magnetic Weyl semimetal. To access the length scales relevant for chiral transport, it is mandatory to fabricate microstructures of this fascinating compound. We therefore have cut micro-ribbons (typical size $0.3~\times~3~\times~50$μ$m^3$) from Co$_3$Sn$_2$S$_2$ single crystals using a focused beam of Ga$^{2+}$-ions and investigated the impact of the sample dimensions and possible surface doping on the magnetotransport properties. The large intrinsic anomalous Hall effect observed in the micro ribbons is quantitatively consistent with the one in bulk samples. Our results show that focused ion beam cutting can be used for nano-patterning single crystalline Co$_3$Sn$_2$S$_2$, enabling future transport experiments in complex microstructures of this Weyl semimetal.

cond-mat.mes-hall↗

arXiv2018

Detuning the Honeycomb of the α-RuCl3 Kitaev lattice: A case of Cr3+ dopant

Fine-tuning chemistry by doping with transition metals enables new perspectives for exploring Kitaev physics on a two-dimensional (2D) honeycomb lattice of α-RuCl3, which is promising in the field of quantum information protection and quantum computation. The key parameters to vary by doping are both Heisenberg and Kitaev components of the nearest-neighbor exchange interaction between the Jeff = 1/2 Ru3+ spins, depending strongly on the peculiarities of the crystal structure. Here, we successfully grew single crystals of the solid solution series Ru1-xCrxCl3 with Cr3+ ions coupled to the Ru3+ Kitaev host using chemical vapour transport reaction. The Cr3+ substitution preserves the honeycomb type lattice of α-RuCl3 with mixed occupancy of Ru/Cr sites, no hints on cationic order within the layers were found by single crystal X-ray diffraction and transmission electron microscopy investigations. In contrast to the high quality single crystals of α-RuCl3 with ABAB ordered layers, the ternary compounds demonstrate a significant stacking disorder along the c-axis direction evidenced by X-ray diffraction and high resolution scanning transmission electron microscopy (HR-STEM). Raman spectra of substituted samples are in line with a symmetry conservation of the parent lattice upon chromium doping. At the same time, magnetic susceptibility data indicate that the Kitaev physics of α-RuCl3 is increasingly repressed by the dominant spin-only driven magnetism of Cr3+ in Ru1-xCrxCl3.

cond-mat.str-el↗