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Krishna Dindial

Publications and source records attributed to Krishna Dindial.

2 recordsLinked to original sources

Microwave Andreev bound state spectroscopy in a semiconductor-based Planar Josephson junction

By coupling a semiconductor-based planar Josephson junction to a superconducting resonator, we investigate the Andreev bound states in the junction using dispersive readout techniques. Using electrostatic gating to create a narrow constriction in the junction, our measurements unveil a strong coupling interaction between the resonator and the Andreev bound states. This enables the mapping of isolated tunable Andreev bound states, with an observed transparency of up to 99.94\% along with an average induced superconducting gap of $\sim 150 \mu$eV. Exploring the gate parameter space further elucidates a non-monotonic evolution of multiple Andreev bound states with varying gate voltage. Complimentary tight-binding calculations of an Al-InAs planar Josephson junction with strong Rashba spin-orbit coupling provide insight into possible mechanisms responsible for such behavior. Our findings highlight the subtleties of the Andreev spectrum of Josephson junctions fabricated on superconductor-semiconductor heterostructures and offering potential applications in probing topological states in these hybrid platforms.

cond-mat.mes-hall

Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits

The tunnelling of cooper pairs across a Josephson junction (JJ) allow for the nonlinear inductance necessary to construct superconducting qubits, amplifiers, and various other quantum circuits. An alternative approach using hybrid superconductor-semiconductor JJs can enable superconducting qubit architectures with all electric control. Here we present continuous-wave and time-domain characterization of gatemon qubits and coplanar waveguide resonators based on an InAs two-dimensional electron gas. We show that the qubit undergoes a vacuum Rabi splitting with a readout cavity and we drive coherent Rabi oscillations between the qubit ground and first excited states. We measure qubit relaxation times to be $T_1 =$ 100 ns over a 1.5 GHz tunable band. We detail the loss mechanisms present in these materials through a systematic study of the quality factors of coplanar waveguide resonators. While various loss mechanisms are present in III-V gatemon circuits we detail future directions in enhancing the relaxation times of qubit devices on this platform.

quant-ph