arXiv subjects

Krishna Prasad Maity

Publications and source records attributed to Krishna Prasad Maity.

5 recordsLinked to original sources

arXiv2026

Wavelength-Resolved Control of Photovoltaic Screening and Defect-Mediated Doping in Photo-Ferroelectric/Graphene Devices

Ferroelectrics enable large charge doping of two-dimensional overlayers, but the coexistence of switching and nonswitching charge dynamics complicate electro-optical analysis. Here, we investigate the optoelectronic response of a ferroelectric/graphene device under 365 and 530 nm illumination, disentangling effects on ferroelectric dipole alignment from extrinsic current pathways. Graphene acts as a high-gain sensor, amplifying subtle polarization dynamics into a pronounced resistance difference. By resolving switching and nonswitching channels in dark and illuminated conditions, we reveal a competition between photovoltaic charge screening and defect-assisted excitation that governs device electrostatics. Above-band gap illumination generates free carriers that induce leaky ferroelectric hysteresis and suppress the graphene resistance ratio between opposite remanent polarization states from 290% to 15% due to dynamic photovoltaic charge screening. In contrast, 530 nm illumination primarily induces charge redistribution in ferroelectrics via defect-state excitation, leading to a significantly weaker suppression of the resistance variation of graphene. These results establish practical guidelines for selecting photon energy and intensity to either preserve remanent polarization while tuning channel doping or deliberately reconfigure polarization through optical programming.

cond-mat.other↗

arXiv2026

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers

Sliding ferroelectricity in van der Waals (vdW) layered systems has emerged as a promising route toward non-volatile nanoscale devices, where interlayer displacement in non-centrosymmetric bilayers generates an out-of-plane polarization. In particular, 3R-stacked bilayer transition metal dichalcogenides (TMDs) grown via chemical vapor deposition (CVD) have been shown to host such polarization due to broken inversion symmetry. However, a detailed investigation of the 2D ferroelectric (FE) properties of CVD-grown 2D films, particularly the role of intrinsic disorder, such as structural defects and domain structure, remains poorly understood. Here, we investigate the FE switching characteristics of CVD-grown 3R-stacked WSe2 using a graphene-based ferroelectric field-effect transistor (graphene-FE-FET) architecture, where graphene serves as a highly sensitive probe of induced charge modulation due to polarization switching of FEs. We show that the growth-induced structural disorder significantly impacts polarization switching, while multi-domain kinetics governs the evolution of the FE response. These findings provide important insights into the design and optimization of FE devices based on vdW materials.

cond-mat.mtrl-sci↗

arXiv2021

Magnetic field driven dielectric relaxation in non-magnetic composite medium: a low temperature study

The frequency dependence of dielectric constant for composites of polyaniline (PANI) and multi-walled carbon nanotube (MWCNT) with different degree of functionalization is studied at low temperature (down to 4.2 K) and magnetic field (up to 3 Tesla) applied both in parallel and perpendicular direction of ac electric field. A relaxation phenomenon is observed in all the MWCNT/PANI composites by applying magnetic field in both the directions, below 10$^3$ Hz. However, PANI does not show any relaxation peak with applied magnetic field in either direction. The relaxation peak frequency does not depend on the strength of magnetic field but it varies with temperature and degree of functionalization of MWCNT in composites. This relaxation phenomenon occurs due to the inhomogeneity of the medium of two highly mismatched conductive materials at low temperatures. We have tried to explain our results in the light of Parish and Littlewood theory about magnetocapacitance in nonmagnetic composite.

cond-mat.dis-nn↗

arXiv2018

Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4

We report the tuning from spin one channel (1CK) to orbital two-channel Kondo (2CK) effect by varying CoFe2O4 (CFO) content in the composites with LaNiO3 (LNO) along with the presence of ferrimagnetism. Although there is no signature of resistivity upturn in case of pure LNO, all the composites exhibit a distinct upturn in the temperature range 30-80 K. For composite with lower percentage of CFO (10 %), the electron spin plays the key role in the emergence of resistivity upturn which is affected by external magnetic field. On the other hand, when the CFO content is increased (15%), the upturn shows strong robustness against high magnetic field (14 T) and a crossover in temperature variation from lnT to T^1/2 at the Kondo temperature, indicating the appearance of orbital 2CK effect. The orbital 2CK effect is originated due to the scattering of conduction electrons from the structural two-level systems which is created at the interfaces between the two phases (LNO and CFO) of different crystal structures as well as inside the crystal planes. A negative magnetoresistance (MR) is observed at low temperature (< 30 K) for composites containing both lower (10 %) and higher percentage (15 %) of CFO. We have analyzed the negative MR using Khosla and Fisher semi-empirical model based on spin dependent scattering of conduction electrons from localized spins.

cond-mat.mtrl-sci↗

arXiv2017

Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite

Electrical resistivity and magnetoresistance(MR) in polyaniline(PANI) with carbon nanotube(CNT) and functionalized carbon nanotube(fCNT) composites have been studied for different weight percentage down to the temperature 4.2K and up to magnetic field 5T. Resistivity increases significantly in composite at low temperature due to functionalization of CNT compare to only CNT. Interestingly transition from negative to positive magnetoresistance has been observed for 10wt% of composite as the effect of disorder is more in fCNT/PANI. This result depicts that the MR has strong dependency on disorder in the composite system. The transition of MR has been explained in the basis of polaron-bipolaron model. The long range Coulomb interaction between two polarons screened by disorder in the composite of fCNT/PANI, increases the effective on-site Coulomb repulsion energy to form bipolaron which leads to change the sign of MR from negative to positive.

cond-mat.dis-nn↗