arXiv subjects

Kristiāns Čerņevičs

Publications and source records attributed to Kristiāns Čerņevičs.

7 recordsLinked to original sources

arXiv2026

Charge carrier flow through trimmed graphene nanoribbon junctions

As Moore's law approaches its fundamental limits, the development of nanoelectronic devices using low-dimension materials has become a promising avenue for further miniaturization and performance improvements. Among the various novel materials, graphene nanoribbons (GNRs) have emerged as particularly attractive candidates due to their unique electronic properties, opening up a whole new nanoelectronics paradigm consisting of circuits made entirely of graphene. However, due to the technical constraints that naturally arise when working on a two-dimensional plane, the design of efficient nanoelectronic components with a minimal spatial footprint remains a significant challenge. In particular, connecting various components can be a real architectural challenge, comparable to that of the first printed circuit boards. This paper investigates strategies for designing optimal-sized nanoribbon junctions which allow connecting GNRs at an angle, by trimming the junction edge while maintaining favorable electronic properties. Specifically, we show that the probability density current at the tip of junctions is negligible, implying that a selection of atoms can safely be removed without significantly altering the conductance. More generally, we demonstrate that larger trimmings have impacts on the conductance channels, resulting in a conductance that is mainly dictated by the ratio of armchair and zigzag edges. Finally, we propose a simple model relating this ratio to the conductance.

cond-mat.mes-hall↗

arXiv2024

Design Rules for Interconnects Based on Graphene Nanoribbon Junctions

Graphene nanoribbons (GNRs) produced by means of bottom-up chemical self-assembly are considered promising candidates for the next-generation nanoelectronic devices. We address the electronic transport properties of angled two-terminal GNR junctions, which are inevitable in the interconnects in graphene-based integrated circuits. We construct a library of over 400000 distinct configurations of 60$^\circ$ and 120$^\circ$ junctions connecting armchair GNRs of different widths. Numerical calculations combining the tight-binding approximation and the Green's function formalism allow identifying numerous junctions with conductance close to the limit defined by the GNR leads. Further analysis reveals underlying structure-property relationships with crucial roles played by the bipartite symmetry of graphene lattice and the presence of resonant states localized at the junction. In particular, we discover and explain the phenomenon of binary conductance in 120$^\circ$ junctions connecting metallic GNR leads that guarantees maximum possible conductance. Overall, our study defines the guidelines for engineering GNR junctions with desired electrical properties.

cond-mat.mes-hall↗

arXiv2023

Electrical detection of the flat band dispersion in van der Waals field-effect structures

Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat band position in field-effect structures are slowing down the investigation of their properties. In this work, we employ Indium Selenide (InSe) as a flat-band system due to a van Hove singularity at the valence band edge in a few-layer form of the material without the requirement of a twist angle. We investigate tunneling photocurrents in gated few-layer InSe structures and relate them to ambipolar transport and photoluminescence measurements. We observe an appearance of a sharp change in tunneling mechanisms due to the presence of the van Hove singularity at the flat band. We further corroborate our findings by studying tunneling currents as a reliable probe for the flat-band position up to room temperature. Our results create an alternative approach to studying flat-band systems in heterostructures of 2D materials.

cond-mat.mes-hall↗

arXiv2021

Edge Disorder in Bottom-Up Zigzag Graphene Nanoribbons: Implications for Magnetism and Quantum Electronic Transport

We unveil the nature of the structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on the magnetism and electronic transport on the basis of scanning probe microscopies and first-principles calculations. We find that edge-missing m-xylene units emerging during the cyclodehydrogenation step of the on-surface synthesis are the most common point defects. These "bite'' defects act as spin-1 paramagnetic centers, severely disrupt the conductance spectrum around the band extrema, and give rise to spin-polarized charge transport. We further show that the electronic conductance across graphene nanoribbons is more sensitive to "bite" defects forming at the zigzag edges than at the armchair ones. Our work establishes a comprehensive understanding of the low-energy electronic properties of disordered bottom-up graphene nanoribbons.

cond-mat.mtrl-sci↗

arXiv2020

Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions

The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated heterojunctions consisting of a graphene quantum dot of varying lengths and widths embedded in a pair of armchair-edged metallic nanoribbons, of the kind recently fabricated via on-surface synthesis. We show that the presence of the quantum dot enables the opening of a width-dependent transport gap, thereby yielding built-in one-dimensional metal-semiconductor-metal junctions. Furthermore, we find that, in the vicinity of the band edges, the conductance is subject to a smooth transition from an antiresonant to a resonant transport regime upon increasing the channel length. These results are rationalized in terms of a competition between quantum-confinement effects and quantum dot-to-lead coupling. Overall, our work establishes graphene quantum dot nanoarchitectures as appealing platforms to seamlessly integrate gap-tunable semiconducting channels and metallic contacts into an individual nanoribbon, hence realizing self-contained carbon-based electronic devices.

cond-mat.mes-hall↗

arXiv2020

Quantum Electronic Transport Across "Bite" Defects in Graphene Nanoribbons

On-surface synthesis has recently emerged as an effective route towards the atomically precise fabrication of graphene nanoribbons of controlled topologies and widths. However, whether and to which degree structural disorder occurs in the resulting samples is a crucial issue for prospective applications that remains to be explored. Here, we experimentally identify missing benzene rings at the edges, which we name "bite" defects, as the most abundant type of disorder in armchair nanoribbons synthesized by the bottom-up approach. First, we address their density and spatial distribution on the basis of scanning tunnelling microscopy and find that they exhibit a strong tendency to aggregate. Next, we explore their effect on the quantum charge transport from first-principles calculations, revealing that such imperfections substantially disrupt the conduction properties at the band edges. Finally, we generalize our theoretical findings to wider nanoribbons in a systematic manner, hence establishing practical guidelines to minimize the detrimental role of such defects on the charge transport. Overall, our work portrays a detailed picture of "bite" defects in bottom-up armchair graphene nanoribbons and assesses their effect on the performance of carbon-based nanoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2020

Even-odd conductance effect in graphene nanoribbons induced by edge functionalization with aromatic molecules: Basis for novel chemosensors

We theoretically investigate the electron transport in armchair and zigzag graphene nanoribbons (GNRs) chemically functionalized with p-polyphenyl and polyacene groups of increasing length. Our nearest-neighbor tight-binding calculations indicate that, depending on whether the number of aromatic rings in the functional group is even or odd, the resulting conductance at energies matching the energy levels of the corresponding isolated molecule are either unaffected or reduced by exactly one quantum as compared to the pristine GNR, respectively. Such an even-odd effect is shown to originate from a subtle interplay between the electronic states of the guest molecule that are spatially localized on the binding sites and those of the host nanoribbon. We next generalize our findings by employing more accurate tight-binding Hamiltonians along with density-functional theory calculations, and critically discuss the robustness of the observed physical effects against the level of theory adopted. Our work offers a comprehensive understanding of the influence of aromatic molecules bound to the edge of graphene nanoribbons on their electronic transport properties, an issue which is instrumental to the prospective realization of graphene-based chemosensors.

cond-mat.mes-hall↗