arXiv subjects

Kristian S. Thygesen

Publications and source records attributed to Kristian S. Thygesen.

At least 19 recordsLinked to original sources

arXiv2026

Equivariant Graph Neural Networks Improve Optical Spectra Prediction for Materials Screening

Scalable prediction of optical spectra is a critical component of high-throughput materials screening for optoelectronic applications such as solar cells. Existing surrogate models are trained on spectra computed from lower levels of theory or rely on rotation-invariant scalar features, limiting their geometric expressiveness. We explore the use of equivariant graph neural networks for optical spectra prediction, adapting GotenNet to this task and evaluating it on multiple datasets including a recently published collection of 10,533 structures with spectra computed at the level of the random phase approximation (RPA). The proposed model outperforms the current state of the art, with the largest gains in the 0-8 eV range and on predicting the static real permittivity, both of particular relevance for thin-film optics.

physics.optics↗

arXiv2026

Defect Tolerance in Trigonal Selenium Photovoltaics

Understanding how point defects fundamentally influence photovoltaic performance remains a central question for emerging wide-band gap absorbers. Trigonal selenium (t-Se) has recently re-emerged as a promising photovoltaic material due to its near-optimal band gap for tandem and indoor applications. Here we quantify defect-assisted Shockley-Read-Hall (SRH) recombination in t-Se using first principles calculations across a large and chemically diverse set of point defects. Our results suggest that t-Se is intrinsically defect tolerant. Despite the presence of multiple deep levels in the gap, recombination via nonradiative multi-phonon emission processes is strongly suppressed by large lattice reorganizations and large energy releases of at least 0.5 EG per recombination event, while radiative defect-assisted capture also remains too small to account for the observed device losses. Consequently, SRH recombination mediated by realistic concentrations of point defects cannot account for the observed efficiency limitations in selenium photovoltaics. We explore trends in both radiative and nonradiative SRH recombination rates across the defect data set, highlighting their complex dependence on defect level position, lattice relaxation, charge state, and doping conditions. These findings establish trigonal selenium as a defect-tolerant wide-band-gap absorber and provide transferable design principles for optimizing next-generation photovoltaic materials for tandem and indoor applications.

cond-mat.mtrl-sci↗

arXiv2026

Bulk and surface electronic structure of MoAlB(010)

The bulk and surface electronic structure of MoAlB(010) is studied by a combination of angle-resolved photoemission spectroscopy and density functional calculations. The observed bulk Fermi-level crossings agree with the previously reported bulk Fermi surface of the material. Additionally, we find several surface states in the wide projected bulk band gaps around the Fermi energy. The surface states differ in their stability under residual-gas exposure in the vacuum system and in the magnitude of their Rashba-type spin-orbit splitting. We explain this in terms of their elemental and orbital character. A surface state arising from Al dangling bonds is sensitive to surface contamination, whereas a mainly Mo-derived surface state exhibits the stronger spin-orbit splitting. The surface states show symmetry-enforced crossings near the $\bar{\mathrm{S}}$ point of the surface Brillouin zone. These are protected by the mirror-symmetry elements of the p2mm wallpaper group.

cond-mat.mtrl-sci↗

arXiv2026

Large-scale Integration of Experimental and Computational Data for 2D Materials

The past decade has seen rapid growth in the number of experimentally realized two-dimensional (2D) materials with diverse chemical and physical properties. However, information on their crystal structure, synthesis routes, and measured or predicted properties, remains scattered across thousands of publications. Here we consolidate this fragmented knowledge by establishing X2DB - an open infrastructure that integrates experimental and computational data on 2D materials. Using extensive literature mining and direct community uploads, we identify 370 unique 2D materials that have been realized in monolayer or few-layer form, and link them to their digital counterparts in computational databases, enabling consistent ab initio characterization of their properties across monolayer, bilayer and bulk forms. We describe the structure and content of the database highlighting its support for community uploads, illustrate how it can be used to generate new scientific insight and introduce a hierarchical classification of the known set of 2D materials. Our work provides a foundation for the integration and cross-fertilization of experimental and theoretical knowledge, opening new avenues for data-driven, predictive synthesis of novel 2D materials.

cond-mat.mtrl-sci↗

arXiv2025

Accelerating point defect photo-emission calculations with machine learning interatomic potentials

We introduce a computational framework leveraging universal machine learning interatomic potentials (MLIPs) to dramatically accelerate the calculation of photoluminescence (PL) spectra of atomic or molecular emitters with ab initio accuracy. By replacing the costly density functional theory (DFT) computation of phonon modes with much faster MLIP phonon mode calculations, our approach achieves speed improvements exceeding an order of magnitude with minimal precision loss. We benchmark the approach using a dataset comprising ab initio emission spectra of 791 color centers spanning various types of crystal point defects in different charge and magnetic states. The method is also applied to a molecular emitter adsorbed on a hexagonal boron nitride surface. Across all the systems, we find excellent agreement for both the Huang-Rhys factor and the PL lineshapes. This application of universal MLIPs bridges the gap between computational efficiency and spectroscopic fidelity, opening pathways to high-throughput screening of defect-engineered materials. Our work not only demonstrates accelerated calculation of PL spectra with DFT accuracy, but also makes such calculations tractable for more complex materials.

cond-mat.mtrl-sci↗

arXiv2025

Defect-Assisted Recombination in Semiconductors and Photovoltaic Device Parameters from First Principles

We introduce a method to calculate defect-assisted Shockley-Read-Hall (SRH) recombination rates in imperfect semiconductors from first principles. The method accounts for the steady state recombination dynamics under given non-equilibrium conditions (split quasi Fermi levels), by invoking a full solution to the rate equations describing transitions across the band gap via all possible charge states of the defect. Transition rates due to radiative and non-radiative multi-phonon emission processes are calculated from first principles. The method is used to evaluate the effect of selected defects on the photovoltaic device parameters of seven emergent photovoltaic semiconductors. These examples clearly highlight the limitations of commonly employed approximations to the recombination dynamics. Our work advances the description and understanding of defect-induced losses in photovoltaics and provides a basis for developing the important concept of defect tolerant semiconductors and to discover high-performance photovoltaic materials computationally.

cond-mat.mtrl-sci↗

arXiv2025

Predicting aqueous and electrochemical stability of 2D materials from extended Pourbaix analyses

A key challenge for computational discovery of electrocatalytic materials is the reliable prediction of thermodynamic stability in aqueous environment and under different electrochemical conditions. In this work, we first evaluate the electrochemical stability of more than 3000 two-dimensional (2D) materials using conventional Pourbaix diagrams (CPDs). Due to the complete neglect of thermodynamic barriers along the (often complex) reaction pathways, the vast majority of the materials are predicted to be unstable even though some are known to be stable in practice. We then introduce an analysis based on the surface Pourbaix diagram (SPD) including 'early intermediate states' that represent the first steps of the key surface passivation and dissolution reactions. The SPD framework is applied to the 2D materials MoS$_2$, phosphorene, and the MXene Ti$_2$C, all of which are predicted to be unstable by the CPD. For MoS$_2$, our approach reproduces the experimental pH-U stability window as well as the experimental desulphurization potential. For phosphorene and Ti2$_C$, the SPD approach is used to investigate the spontaneous degradation mechanism and the potential-dependent surface termination, respectively, again yielding good agreement with experiments. The SPD-based stability analysis emerges as a versatile and quantitative method for prediction of stability and investigation of surface structures in electrochemical environments.

cond-mat.mtrl-sci↗

arXiv2025

Self-consistent layer-projected scissors operator for band structures of complex 2D van der Waals materials

We introduce a computationally efficient method to calculate the quasiparticle (QP) band structure of general van der Waals (vdW) heterostructures. A layer-projected scissors (LAPS) operator, which depends on the one-body density matrix, is added to the density functional theory (DFT) Hamiltonian. The LAPS operator corrects the band edges of the individual layers for self-energy effects (both intralayer and interlayer) and unphysical strain fields stemming from the use of model supercells. The LAPS operator is treated self-consistently whereby charge redistribution and interlayer hybridization occurring in response to the band energy corrections are properly accounted for. We present several examples illustrating both the qualitative and quantitative performance of the method, including MoS$_2$ films with up to 20 layers, bilayer MoS$_2$ in an electric field, lattice-matched MoS$_2$/WS$_2$ and MoSe$_2$/WSe$_2$ bilayers, and MoSe$_2$/WS$_2$ moiré structures. Our work opens the way for predictive modeling of electronic, optical, and topological properties of complex and experimentally relevant vdW materials.

cond-mat.mtrl-sci↗

arXiv2025

Roadmap for Photonics with 2D Materials

Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combination with layer stacking and twisting, nanofabrication, surface-science methods, and integration into nanostructured environments. Photonics encompasses a multidisciplinary collection of those directions, where 2D materials contribute with polaritons of unique characteristics such as strong spatial confinement, large optical-field enhancement, long lifetimes, high sensitivity to external stimuli (e.g., electric and magnetic fields, heating, and strain), a broad spectral range from the far infrared to the ultraviolet, and hybridization with spin and momentum textures of electronic band structures. The explosion of photonics with 2D materials as a vibrant research area is producing breakthroughs, including the discovery and design of new materials and metasurfaces with unprecedented properties as well as applications in integrated photonics, light emission, optical sensing, and exciting prospects for applications in quantum information, and nanoscale thermal transport. This Roadmap summarizes the state of the art in the field, identifies challenges and opportunities, and discusses future goals and how to meet them through a wide collection of topical sections prepared by leading practitioners.

cond-mat.mtrl-sci↗

arXiv2025

Properties of quantum emitters in different hBN sample types particularly suited for nanophotonic integration

Single photon emitters in two-dimensional (2D) hexagonal boron nitride (hBN) are promising solid-state quantum emitters for photonic applications and quantum networks. Despite their favorable properties, much is still unknown about their characteristics and their atomic origin. We focus on two different kinds of hBN samples that particularly lend themselves for integration with nanophotonic devices, multilayer nanoflakes produced by liquid phase exfoliation (LPE) and a layer-engineered sample from hBN grown by chemical vapour deposition (CVD). We investigate their inherent defects and fit their emission properties to computationally simulated optical properties of likely carbon-related defects. Thereby we compare and elucidate the properties in different sample types particularly suited for photonic quantum networks and narrow down the origin of emitters found in these samples. Our work is thus an important step towards harnessing the full potential of single photon emitters in hBN.

quant-ph↗

arXiv2025

Computational discovery of high-refractive-index van der Waals materials: The case of HfS$_2$

New high-refractive-index dielectric materials may enhance many optical technologies by enabling efficient manipulation of light in waveguides, metasurfaces, and nanoscale resonators. Van der Waals materials are particularly promising due to their excitonic response and strong in-plane polarizability. Here we combine ab initio calculations and experiments to discover new high-refractive-index materials. Our screening highlights both known and new promising optical materials, including hafnium disulfide (HfS$_2$), which shows an in-plane refractive index above 3 and large anisotropy in the visible range. We confirm these theoretical predictions through ellipsometry measurements and investigate the photonic potential of HfS$_2$ by fabricating nanodisk resonators, observing optical Mie resonances in the visible spectrum. Over the course of seven days, we observe a structural change in HfS$_2$, which we show can be mitigated by storage in either argon-rich or humidity-reduced environments. This work provides a comparative overview of high-index van der Waals materials and showcases the potential of HfS$_2$ for photonic applications in the visible spectrum.

physics.optics↗

arXiv2024

Effect of Hubbard U corrections on the electronic and magnetic properties of 2D materials: A high-throughput study

We conduct a systematic investigation of the role of Hubbard U corrections in electronic structure calculations of two-dimensional (2D) materials containing 3d transition metals. Specifically, we use density functional theory (DFT) with the PBE and PBE+U approximations to calculate the crystal structure, band gaps, and magnetic parameters of 638 monolayers. Based on a comprehensive comparison to experiments we first establish that inclusion of the U correction worsens the accuracy for the lattice constant. Consequently, PBE structures are used for subsequent property evaluations. The band gaps show significant dependence on the U-parameter. In particular, for 134 (21%) of the materials the U parameter leads to a metal-insulator transition. For the magnetic materials we calculate the magnetic moment, magnetic exchange coupling, and magnetic anisotropy parameters. In contrast to the band gaps, the size of the magnetic moments shows only weak dependence on U. Both the exchange energies and magnetic anisotropy parameters are systematically reduced by the U correction. On this basis we conclude that the Hubbard U correction will lead to lower predicted Curie temperatures in 2D materials. All the calculated properties are available in the Computational 2D Materials Database (C2DB).

cond-mat.mtrl-sci↗

arXiv2024

Developments and applications of the OPTIMADE API for materials discovery, design, and data exchange

The Open Databases Integration for Materials Design (OPTIMADE) application programming interface (API) empowers users with holistic access to a growing federation of databases, enhancing the accessibility and discoverability of materials and chemical data. Since the first release of the OPTIMADE specification (v1.0), the API has undergone significant development, leading to the upcoming v1.2 release, and has underpinned multiple scientific studies. In this work, we highlight the latest features of the API format, accompanying software tools, and provide an update on the implementation of OPTIMADE in contributing materials databases. We end by providing several use cases that demonstrate the utility of the OPTIMADE API in materials research that continue to drive its ongoing development.

cond-mat.mtrl-sci↗

arXiv2024

Layer group classification of two-dimensional materials

The symmetry of a crystal structure with a three-dimensional (3D) lattice can be classified by one of the 230 space group types. For some types of crystals, e.g. crystalline films, surfaces, or planar interfaces, it is more appropriate to assume a 2D lattice. With this assumption, the structure can be classified by one of the 80 layer group types. We have implemented an algorithm to determine the layer group type of a 3D structure with a 2D lattice, and applied it to more than 15,000 monolayer structures in the Computational 2D Materials (C2DB) database. We compare the classification of monolayers by layer groups and space groups, respectively. The latter is defined as the space group of the 3D bulk structure obtained by repeating the monolayer periodically in the direction perpendicular to the 2D lattice (AA-stacking). By this correspondence, nine pairs of layer group types are mapped to the same space group type due to the inability of the space group to distinguish the in-plane and out-of-plane axes. In total 18% of the monolayers in the C2DB belong to one of these layer group pairs and are thus not properly classified by the space group type.

cond-mat.mtrl-sci↗

arXiv2023

Selenium and the role of defects for photovoltaic applications

We present first principles calculations of the electronic properties of trigonal selenium with emphasis on photovoltaic applications. The band gap and optical absorption spectrum of pristine selenium is calculated from many-body perturbation theory yielding excellent agreement with experiments. We then investigate the role of intrinsic as well as extrinsic defects and estimate the equilibrium concentrations resulting from realistic synthesis conditions. The intrinsic defects are dominated by vacancies and we show that these do not result in significant non-radiative recombination. The charge balance remains dominated by vacancies when extrinsic defects are included, but these may give rise to sizable non-radiative recombination rates, which could severely limit the performance of selenium based solar cells. Our results thus imply that the pollution by external elements is a decisive factor for the photovoltaic efficiency, which will be of crucial importance when considering synthesis conditions for any type of device engineering.

cond-mat.mtrl-sci↗

arXiv2023

Accurate Dielectric Response of Solids: Combining the Bethe-Salpeter Equation with the Random Phase Approximation

The Bethe-Salpeter equation (BSE) can provide an accurate description of low-energy optical spectra of insulating crystals - even when excitonic effects are important. However, due to high computational costs it is only possible to include a few bands in the BSE Hamiltonian. As a consequence, the dielectric screening given by the real part of the dielectric function can be significantly underestimated by the BSE. Here we show that universally accurate optical response functions can be obtained by combining a four-point BSE-like equation for the irreducible polarisability with a two-point Dyson equation which includes the higher-lying transitions within the random phase approximation (RPA). The new method is referred to as BSE+. It has a computational cost comparable to the BSE but a much faster convergence with respect to the size of the electron-hole basis. We use the method to calculate refractive indices and electron energy loss spectra for a test set of semiconductors and insulators. In all cases the BSE+ yields excellent agreement with experimental data across a wide frequency range and outperforms both BSE and RPA.

cond-mat.mtrl-sci↗

arXiv2023

Excitonic insulators and superfluidity in 2D bilayers without external fields

We explore a new platform for realising excitonic insulators, namely van der Waals (vdW) bilayers comprising 2D Janus materials. In previous studies, Type-II heterobilayers have been brought to the excitonic insulating regime by tuning the band alignment using external gates. In contrast, the Janus bilayers of the current work represent intrinsic excitonic insulators. We first conduct ab initio calculations to obtain the quasiparticle band structures, screened Coulomb interaction, and interlayer exciton binding energies of the bilayers. These ab initio-derived quantities are then used to construct a BCS-like Hamiltonian of the exciton condensate. By solving the mean-field gap equation, we identify 16 vdW Janus bilayers with insulating ground states and superfluid properties. Our calculations expose a new class of advanced materials that are likely to exhibit novel excitonic phases at low temperatures, and highlight the subtle competition between interlayer hybridization, spin-orbit coupling, and dielectric screening that govern their properties.

cond-mat.mes-hall↗

arXiv2023

Exciton Superfluidity in 2D Heterostructures from First Principles: The importance of material specific screening

Recent theoretical and experimental studies suggest that van der Waals heterostructures with n- and p-doped bilayers of transition metal dichalcogenides are promising facilitators of exciton superfluidity. Exciton superfluidity in such bilayer systems is often modelled by solving a mean-field gap equation defined for only the conduction and valence band of the electron and hole material respectively. A key quantity entering the gap equation is the effective Coulomb potential acting as the bare interaction in the subspace of the model. Since the model only includes a few bands around the Fermi energy the effective model interaction is partially screened. Although the screening is a material dependent quantity it has in previous works been accounted for in an ad hoc manner, by assuming a static dielectric constant of 2 for a wide range of different materials. In this work we show that the effective model interaction can be derived from first principles using open source code frameworks. Using this novel ab initio downfolding procedure we show that the material dependent screening is essential to predict both magnitude and trends of exciton binding energies and superfluid properties. Furthermore, we suggest new material platforms of both transition metal oxides and dichalcogenides with superior properties compared to the standard devices with two transition metal dichalcogenide layers.

cond-mat.mes-hall↗