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Kristof Croes

Publications and source records attributed to Kristof Croes.

4 recordsLinked to original sources
arXiv2025

Novel Concept-Oriented Synthetic Data approach for Training Generative AI-Driven Crystal Grain Analysis Using Diffusion Model

The traditional techniques for extracting polycrystalline grain structures from microscopy images, such as transmission electron microscopy (TEM) and scanning electron microscopy (SEM), are labour-intensive, subjective, and time-consuming, limiting their scalability for high-throughput analysis. In this study, we present an automated methodology integrating edge detection with generative diffusion models to effectively identify grains, eliminate noise, and connect broken segments in alignment with predicted grain boundaries. Due to the limited availability of adequate images preventing the training of deep machine learning models, a new seven-stage methodology is employed to generate synthetic TEM images for training. This concept-oriented synthetic data approach can be extended to any field of interest where the scarcity of data is a challenge. The presented model was applied to various metals with average grain sizes down to the nanoscale, producing grain morphologies from low-resolution TEM images that are comparable to those obtained from advanced and demanding experimental techniques with an average accuracy of 97.23%.

cs.LG↗
arXiv2024

Low-Loss and Low-Power Silicon Ring Based WDM 32$\times$100 GHz Filter Enabled by a Novel Bend Design

Ring resonators are crucial in silicon photonics for various applications, but conventional designs face performance trade-offs. Here a third-order polynomial interconnected circular (TOPIC) bend is proposed to revolutionize the ring designs fundamentally. The TOPIC bend has a unique feature of continuous curvature and curvature derivative, which is theoretically derived to be essential for waveguide loss optimization. With the TOPIC bend, the silicon ring resonators demonstrated here have achieved three records to the best of our knowledge: the smallest radius (0.7 $\mathrm{\mu m}$) for silicon rings resonating with single guided mode, the lowest thermal tuning power (5.85 mW/$\pi$) for silicon rings with FSR $\geq$3.2 THz, and the first silicon ring-based WDM 32$\times$100 GHz filter. The filter has doubled the channel amount compared to the state of the art, and meanwhile achieved low insertion loss (1.91 $\pm$ 0.28 dB) and low tuning power (283 GHz/mW). Moreover, the TOPIC bend is not limited to ring applications, it can also be used to create bends with an arbitrary angle, with the advantages of ultra-compact radius and heater integration, which are expected to replace all circular bends in integrated photonics, greatly reducing system size and power consumption.

physics.optics↗
arXiv2024

Selecting Alternative Metals for Advanced Interconnects

Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions approach the 10 nm scale, the limitations of conventional Cu dual-damascene metallization are becoming increasingly difficult to overcome, spurring over a decade of focused research into alternative metallization schemes. The selection of alternative metals is a highly complex process, requiring consideration of multiple criteria, including resistivity at reduced dimensions, reliability, thermal performance, process technology readiness, and sustainability. This tutorial introduces the fundamental criteria for benchmarking and selecting alternative metals and reviews the current state of the art in this field. It covers materials nearing adoption in high-volume manufacturing, materials currently under active research, and potential future directions for fundamental study. While early alternatives to Cu metallization have recently been introduced in commercial CMOS devices, the search for the optimal interconnect metal remains ongoing.

physics.app-ph↗