arXiv subjects

Kuan Eng Johnson Goh

Publications and source records attributed to Kuan Eng Johnson Goh.

At least 19 recordsLinked to original sources

arXiv2026

Towards fault-tolerance with universal phase-error-transparent gates for high-spin cat codes

High-dimensional nuclear spins offer a hardware-efficient route to quantum error correction (QEC), with the spin cat code providing intrinsic robustness against phase errors -- the dominant noise channel in donor-in-silicon architectures. However, realizing the full potential of this encoding requires gate operations that preserve its error-correcting properties. In this work, we construct a universal logical gate set that is error-transparent (ET) to phase errors, and discuss its practical implementations and challenges. The ET gates ensure that phase errors occurring stochastically during gate operations are propagated in a systematically traceable manner and remain correctable in a subsequent QEC step. Among the universal gate set constructed, we identify the logical $X$ gate as the primary challenge and discuss potential realization schemes. In addition, to fully leverage the spin cat code's advantage over an unencoded qubit, multi-tone microwave driving of the logical $CZ$ gate is essential. Our simulations show that ET gates significantly outperform non-ET gates and may be necessary to surpass the break-even point. We further show how logical measurement and recovery can be constructed from ET operations, and explain why state-preparation cannot be made ET. In particular, ET measurement in the computational basis is realizable via spin parity measurement, and that error correction circuits constructed from ET operations achieve optimal error correction capacity. Our work charts a concrete path toward full fault-tolerant quantum computation with high-dimensional nuclear spin systems.

quant-ph↗

arXiv2026

Ferroelectric brightening of spin forbidden dark excitons in a WSe2/hybrid perovskite heterostructure

Long-lived dark excitons in monolayer WSe2 present promising candidates for carrying spin and valley information, but their optical access and spin manipulation have conventionally required the use of strong external magnetic fields. Here, using a ferroelectric hybrid perovskite heterostructure, we leverage the ferroelectric proximity effect to break the WSe2's in-plane rotational symmetry and brighten the spin-forbidden dark excitons under zero magnetic field conditions. Furthermore, we show that the twist angle between the WSe2 and perovskite crystals controls the ferroelectric coupling strength and valley-contrasting polarization. Our proposed mechanism, supported by a four-band tight-binding model, suggests that the ferroelectric proximity effect induces an asymmetric intersublattice interaction, generating an effective in-plane spin-orbit coupling (SOC) field that rotates spin/valley polarization and brightens dark excitons. Our work establishes ferroelectric proximity coupling as an electrically reconfigurable, magnetic-field-free strategy for spin exciton control in two-dimensional semiconductors.

cond-mat.mtrl-sci↗

arXiv2026

Valleytronics in 2D Materials Roadmap

Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and then transition-metal dichalcogenides, made valley control practical through optical, electrical, and magnetic routes. This foundation has enabled remarkable progress in recent years spanning established frontiers, such as valley exciton physics and valley Hall effects, as well as emerging directions including lightwave valleytronics, nanophotonic integration, flat-band valleytronics, and spin-valley qubits. In parallel, there are sustained efforts to scale up valleytronic materials and to predict new valleytronic platforms. This Roadmap brings together perspectives from leading experts to chart the key opportunities and challenges at the forefront of 2D material valleytronics. Each section captures a snapshot of progress in a key research area, identifies critical open challenges, and outlines pathways toward future valleytronics breakthroughs.

cond-mat.mes-hall↗

arXiv2026

Controlling Terahertz Spintronic Photocurrents in 2D-Semiconductor|Ferromagnet Heterostructures through a Functional Hybrid Interface

A profound understanding of terahertz (THz) spin and charge currents in heterostructures involving ferromagnets (FMs) and two-dimensional (2D) materials promises emerging applications in high-speed sensing and data processing. Yet, ultrafast experimental insights remain very limited. Here, we study the efficient photo-generation of THz spin and charge currents in bilayers made from the transition-metal dichalcogenide (TMD) MoS2 and the FM Co. We find that the efficiency of current generation strongly depends on the pump photon energy, as previously reported. Surprisingly, however, we observe that the current dynamics remain identical for pump photon energies above and below the MoS2 band gap. Supported by ab-initio calculations, we conclude that an interfacial hybrid metallic layer forms at the MoS2/Co boundary that has a pronounced photon-energy-dependent absorptance. Thus, the hybrid interfacial layer effectively acts like a pump-energy transducer that increases the spin-current generated in the nearby Co. Our results uncover the vital role of interfacial hybridization as a yet unexplored mechanism for efficient generation of ultrafast photocurrents in 2D-TMD|FM structures.

cond-mat.mes-hall↗

arXiv2026

Simultaneous High-Fidelity Readout and Strong Coupling for a Donor-Based Spin Qubit

Superconducting resonators coupled to solid-state qubits offer a scalable architecture for long-range entangling operations and fast, high-fidelity readout. Realizing this requires low photon-loss rates and qubits with tunable electric dipole moments that couple strongly to the resonator's electric field while maintaining long coherence times. For spin qubits, spin-photon coupling is typically achieved via spin-charge hybridization. However, this introduces a fundamental trade-off: a large spin-charge admixture enhances the coupling strength, which boosts readout and resonator-mediated gate speeds, but exposes the qubit to increased decoherence, thereby increasing the threshold required for strong coupling and limiting the time available for accurate state measurement. This makes it essential to identify optimal operating points for each qubit platform. We address this for the donor-based flip-flop qubit, whose microwave-controllable electron-nuclear spin states make it suitable for coupling to microwave resonators. We demonstrate that, by choosing intermediate tunnel couplings that balance strong interaction with long qubit lifetimes, high-fidelity readout and strong coupling are simultaneously achievable. We also map out the respective charge-photon couplings and photon-loss rates required. Furthermore, we show that experimental constraints on charge-photon coupling and photon loss can be mitigated using squeezed input fields. As similar trade-offs appear in quantum-dot-based qubits, our methods and insights extend naturally to these platforms, offering a potential route toward scalable architectures.

cond-mat.mes-hall↗

arXiv2025

High-fidelity regimes of resonator-mediated controlled-Z gates between quantum-dot qubits

Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge degrees of freedom. Quantum gates can be implemented by parametrically driving the qubits while their transition frequencies are detuned from the resonator frequency. Long-range two-qubit controlled-Z (CZ) gates have been proposed for the DQD spin qubit within the rotating-wave approximation (RWA). Rapid gates demand strong coupling, but RWA breaks down when coupling strengths become significant relative to system frequencies. Therefore, understanding the errors arising from approximations used is critical for high-fidelity operation. Here, we go beyond RWA to study CZ gate fidelity for both DQD spin and charge qubits. We propose a novel parametric drive on the charge qubit that produces smaller errors and show that the fidelity of the CZ gate outperforms its spin counterpart, resulting in a much smaller fidelity loss of $0.05\%$ compared to $0.80\%$ for the spin qubit, and greater robustness against qubit dephasing and photon loss. We find that drive amplitude -- a parameter dropped in RWA -- is critical for optimizing fidelity, with the charge qubit exhibiting better tolerance to drive amplitude variations. Our results demonstrate the necessity of going beyond RWA in understanding how long-range gates can be realized in DQD qubits, with charge qubits offering considerable advantages in high-fidelity operation.

cond-mat.mes-hall↗

arXiv2024

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth. Here, we report a liquid metal oxide-assisted approach to integrate ultrathin, high-k HfO2 dielectric on 2D semiconductors with atomically smooth interfaces. Using this approach, we fabricated 2D WS2 top-gated transistors with subthreshold swings down to 74.5 mV/dec, gate leakage current density below 10-6 A/cm2, and negligible hysteresis. We further demonstrate a one-step van der Waals integration of contacts and dielectrics on graphene. This can offer a scalable approach toward integrating entire prefabricated device stack arrays with 2D materials. Our work provides a scalable solution to address the crucial dielectric engineering challenge for 2D semiconductors, paving the way for high-performance 2D electronics.

cond-mat.mtrl-sci↗

arXiv2024

Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication

Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still lags theoretical expectations. Here, we develop an oxygen-free approach to push the electrical transport of 2D field-effect transistors toward the theoretical phonon-limited intrinsic mobility. We achieve record carrier mobilities of 91 (132) cm2V-1s-1 for mono- (bi-) layer MoS2 transistors on SiO2 substrate. Statistics from over 60 devices confirm that oxygen-free fabrication enhances key figures of merit by more than an order of magnitude. While previous studies suggest that 2D transition metal dichalcogenides such as MoS2 and WS2 are stable in air, we show that short-term ambient exposure can degrade their device performance through irreversible oxygen chemisorption. This study emphasizes the criticality of avoiding oxygen exposure, offering guidance for device manufacturing for fundamental research and practical applications of 2D materials.

cond-mat.mtrl-sci↗

arXiv2024

Towards edge engineering of two-dimensional layered transition-metal dichalcogenides by chemical vapor deposition

The manipulation of edge configurations and structures in atomically thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges), as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc). These rich-edge TMD layers offer versatile candidates for probing the physical and chemical properties, and exploring new applications in electronics, optoelectronics, catalysis, sensing and quantum field. In this review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of unique properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this review is to motivate further research and development efforts in using CVD as a scalable approach to harness the benefits of such crystal-edge engineering.

cond-mat.mtrl-sci↗

arXiv2024

Electrical control of valley polarized charged biexcitons in monolayer WS$_2$

Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation is complicated by their inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic control of valley polarization in charged biexciton (quinton) states of monolayer tungsten disulfide, achieving up to a sixfold increase in the degree of circular polarization under off-resonant excitation. In contrast to the weak direct tuning of excitons typically observed using electrical gating, the quinton photoluminescence remains stable, even with increased scattering from electron doping. By exciting at the exciton resonances, we observed the reproducible non-monotonic switching of the charged state population as the electron doping is varied under gate bias, indicating a coherent interplay between neutral and charged exciton states.

cond-mat.mes-hall↗

arXiv2024

High-Fidelity CZ Gates in Double Quantum Dot -- Circuit QED Systems Beyond the Rotating-Wave Approximation

Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge degrees of freedom. Quantum gates can be implemented by parametrically driving the qubits while their transition frequencies are detuned from the resonator frequency. Long-range two-qubit CZ gates have been proposed for the DQD spin qubit within the rotating-wave approximation (RWA). Rapid gates demand strong coupling, but RWA breaks down when coupling strengths become significant relative to system frequencies. Therefore, understanding the detrimental impact of time-dependent terms ignored by RWA is critical for high-fidelity operation. Here, we go beyond RWA to study CZ gate fidelity for both DQD spin and charge qubits. We propose a novel parametric drive on the charge qubit that produces fewer time-dependent terms and show that it outperforms its spin counterpart. We find that drive amplitude - a parameter dropped in RWA - is critical for optimizing fidelity and map out high-fidelity regimes. Our results demonstrate the necessity of going beyond RWA in understanding how long-range gates can be realized in DQD qubits, with charge qubits offering considerable advantages in high-fidelity operation.

cond-mat.mes-hall↗

arXiv2024

Hybrid quantum systems with artificial atoms in solid state

The development of single-platform qubits, predominant for most of the last few decades, has driven the progress of quantum information technologies but also highlighted the limitations of various platforms. Some inherent issues such as charge/spin noise in materials hinder certain platforms, while increased decoherence upon attempts to scale-up severely impact qubit quality and coupling on others. In addition, a universal solution for coherent information transfer between quantum systems remains lacking. By combining one or more qubit platforms, one could potentially create new hybrid platforms that might alleviate significant issues that current single platform qubits suffer from, and in some cases, even facilitate the conversion of static to flying qubits on the same hybrid platform. While nascent, this is an area of rising importance that could shed new light on robust and scalable qubit development and provide new impetus for research directions. Here, we define the requirements for hybrid systems with artificial atoms in solid state, exemplify them with systems that have been proposed or attempted, and conclude with our outlook for such hybrid quantum systems.

quant-ph↗

arXiv2024

Driving non-trivial quantum phases in conventional semiconductors with intense excitonic fields

Inducing novel quantum phases and topologies in materials using intense light fields is a key objective of modern condensed matter physics, but nonetheless faces significant experimental challenges. Alternately, theory predicts that in the dense limit, excitons - collective excitations composed of Coulomb-bound electron-hole pairs - could also drive exotic quantum phenomena. However, the direct observation of these phenomena requires the resolution of electronic structure in momentum space in the presence of excitons, which became possible only recently. Here, using time- and angle-resolved photoemission spectroscopy of an atomically thin semiconductor in the presence of a high-density of resonantly and coherently photoexcited excitons, we observe the Bardeen-Cooper-Schrieffer (BCS) excitonic state - analogous to the Cooper pairs of superconductivity. We see the valence band transform from a conventional paraboloid into a Mexican-hat like Bogoliubov dispersion - a hallmark of the excitonic insulator phase; and we observe the recently predicted giant exciton-driven Floquet effects. Our work realizes the promise that intense bosonic fields, other than photons, can also drive novel quantum phenomena and phases in materials.

cond-mat.mtrl-sci↗

arXiv2024

Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

cond-mat.mtrl-sci↗

arXiv2024

Nano-ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots

Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications. However, resist residue from fabrication processes is a major limitation. Resulting disordered interfaces degrade device performance and mask underlying transport physics. Conventional cleaning processes are inefficient and can cause material and device damage. Here, we show that thermal scanning probe based cleaning can effectively eliminate resist residue to recover pristine material surfaces. Our technique is compatible at both the material- and device-level, and we demonstrate the significant improvement in the electrical performance of 2D WS2 transistors. We also demonstrate the cleaning of van der Waals heterostructures to achieve interfaces with low disorder. This enables the electrical formation and control of quantum dots that can be tuned from macroscopic current flow to the single-electron tunnelling regime. Such material processing advances are crucial for constructing high-quality vdW heterostructures that are important platforms for fundamental studies and building blocks for quantum and nano-electronics applications.

cond-mat.mes-hall↗

arXiv2024

Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers

Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic mapping of defect wavefunctions reveals an interplay of local symmetry breaking by a charge-state dependent Jahn-Teller lattice distortion that, when combined with strong (~100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into spin and electronic structure of vacancy induced in-gap states towards their application as electrically and optically addressable quantum systems.

cond-mat.mes-hall↗

arXiv2023

Open-orbit induced low field extremely large magnetoresistance in graphene/h-BN superlattices

We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices that emerge due to the existence of open orbits within each miniband. This finding is set against the backdrop of the experimental discovery of the Hofstadter butterfly in moir superlattices, which has sparked considerable interest in the fractal quantum Hall regime. To cope with the challenge of deciphering the low magnetic field dynamics of moir minibands, we utilize a novel semi-classical calculation method, grounded in zero-field Fermi contours, to predict the nontrivial behavior of the Landau-level spectrum. This is compared with fully quantum simulations, enabling an in-depth and contrasted analysis of transport measurements in high-quality graphene-hBN superlattices. Our results not only highlight the primary observation of the open-orbit induced XMR in this system but also shed new light on other intricate phenomena. These include the nuances of single miniband dynamics, evident through Lifshitz transitions, and the complex interplay of semiclassical and quantum effects between these minibands. Specifically, we document transport anomalies linked to trigonal warping, a semiclassical deviation from the expected linear characteristics of Landau levels, and magnetic breakdown phenomena indicative of quantum tunneling, all effects jointly contributing to the intricacies of a rich electronic landscape uncovered at low magnetic fields.

cond-mat.mes-hall↗

arXiv2023

Engineering Perovskite Emissions via Optical Quasi-Bound-States-in-the-Continuum

Metal halide perovskite quantum dots (PQDs) have emerged as promising materials due to their exceptional photoluminescence (PL) properties. A wide range of applications could benefit from adjustable luminescence properties, while preserving the physical and chemical properties of the PQDs. Therefore, post-synthesis engineering has gained attention recently, involving the use of ion-exchange or external stimuli, such as extreme pressure, magnetic and electric fields. Nevertheless, these methods typically suffer from spectrum broadening, intensity quenching or yield multiple bands. Alternatively, photonic antennas can modify the radiative decay channel of perovskites via the Purcell effect, with the largest wavelength shift being 8 nm to date, at an expense of 5-fold intensity loss. Here, we present an optical nanoantenna array with polarization-controlled quasi-bound-states-in-the-continuum (q-BIC) resonances, which can engineer and shift the photoluminescence wavelength over a ~39 nm range and confers a 21-fold emission enhancement of FAPbI3 perovskite QDs. The spectrum is engineered in a non-invasive manner via lithographically defined antennas and the pump laser polarization at ambient conditions. Our research provides a path towards advanced optoelectronic devices, such as spectrally tailored quantum emitters and lasers.

physics.optics↗