arXiv subjects

Kulothungasagaran Narayanapillai

Publications and source records attributed to Kulothungasagaran Narayanapillai.

14 recordsLinked to original sources

arXiv2017

Room Temperature Giant Charge-to-Spin Conversion at SrTiO3/LaAlO3 Oxide Interface

Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current induced spin-orbit torque scheme, has not been demonstrated yet. Here we show, for the first time, a highly efficient spin generation with the efficiency of ~6.3 in the STO/LAO/CoFeB structure at room temperature by using spin torque ferromagnetic resonance. In addition, we suggest that the spin transmission through the LAO layer at high temperature range is attributed to the inelastic tunneling via localized states in the LAO band gap. Our findings may lead to potential applications in the oxide insulator based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2017

Interfacial Rashba magnetoresistance of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface

We report the angular dependence of magnetoresistance in two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface. We find that this interfacial magnetoresistance exhibits a similar angular dependence to the spin Hall magnetoresistance observed in ferromagnet/heavy metal bilayers, which has been so far discussed in the framework of bulk spin Hall effect of heavy metal layer. The observed magnetoresistance is in qualitative agreement with theoretical model calculation including both Rashba spin-orbit coupling and exchange interaction. Our result suggests that magnetic interfaces subject to spin-orbit coupling can generate a nonnegligible contribution to the spin Hall magnetoresistance and the interfacial spin-orbit coupling effect is therefore key to the understanding of various spin-orbit-coupling-related phenomena in magnetic/non-magnetic bilayers.

cond-mat.mtrl-sci↗

arXiv2015

Spin-orbit torque engineering via oxygen manipulation

Spin transfer torques allow the electrical manipulation of the magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques which are a more powerful tool for magnetization control and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here we report that the oxidation of spin-orbit torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.

cond-mat.mtrl-sci↗

arXiv2014

Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures

We demonstrate a current tunable Rashba spin orbit interaction in LaAlO3/SrTiO3 (LAO/STO) quasi two dimensional electron gas (2DEG) system. Anisotropic magnetoresistance (AMR) measurements are employed to detect and understand the current-induced Rashba field. The effective Rashba field scales with the current and a value of 2.35 T is observed for a dc-current of 200 uA. The results suggest that LAO/STO heterostructures can be considered for spin orbit torque based magnetization switching.

cond-mat.mtrl-sci↗

arXiv2014

Band structure of magnonic crystals with defects: Brillouin spectroscopy and micromagnetic simulations

Using Brillouin spectroscopy, the first observation has been made of the band structures of nanostructured defect magnonic crystals. The samples are otherwise one-dimensional periodic arrays of equal-width Ni80Fe20 and cobalt nanostripes, where the defects are stripes of a different width. A dispersionless defect branch emerges within the bandgap with a frequency tunable by varying the defect stripe width, while the other branches observed are similar to those of a defect-free crystal. Micromagnetic and finite-element simulations performed unveil additional tiny bandgaps and the frequency-dependent localization of the defect mode in the vicinity of the defects.

cond-mat.mes-hall↗

arXiv2014

Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires

Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from noncollinear magnetization. Ta/CoFeB/MgO structures are expected to be useful for non-volatile memories and logic devices due to its perpendicular anisotropy and large current induced spin-orbit effective fields. However many aspects such as the angular and temperature dependent phenomena of the effective fields are little understood. Here, we evaluate the angular and temperature dependence of the current-induced spin-orbit effective fields considering contributions from both the anomalous and planar Hall effects. The longitudinal and transverse components of effective fields are found to have strong angular dependence on the magnetization direction at 300 K. The transverse field decreases significantly with decreasing temperature, whereas the longitudinal field shows weaker temperature dependence. Our results reveal important features and provide an opportunity for a more comprehensive understanding of current induced spin-orbit effective fields.

cond-mat.mtrl-sci↗

arXiv2014

Control of domain wall motion at vertically etched nanotrench in ferromagnetic nanowires

We study field-induced domain wall motion in permalloy nanowires with vertically etched nanotrench pinning site. Micromagnetic simulations and electrical measurements are employed to characterize the pinning potential at the nanotrench. It is found that the potential profile for a transverse wall significantly differs from that of a vortex wall, and there is a correlation between the pinning strength and the potential profile. Reliable domain wall pinning and depinning is experimentally observed from a nanotrench in permalloy nanowires. This demonstrates the suitability of the proposed nanotrench pinning sites for domain wall device applications.

cond-mat.mtrl-sci↗

arXiv2014

Thermally assisted domain wall nucleation in perpendicular anisotropy trilayer nanowires

We study thermally assisted domain wall generation in perpendicular magnetic anisotropy CoFeB trilayer nanowires by the effect of Joule heating. The anomalous Hall effect is utilized to detect magnetization reversal in order to study the domain wall generation. We observe a statistical distribution in the switching process which is consistent with the thermal activation process. Our results show that the proposed method provides an efficient way for generating domain walls in perpendicular magnetic nanowires at predefined locations.

cond-mat.mtrl-sci↗

arXiv2013

A new route to spin-orbit torque engineering via oxygen manipulation

Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the combination of the spin transfer torque with the spin Hall effect enables more efficient manipulation. A versatile control mechanism of such spin-orbit torques is beneficial to envision device applications with competitive advantages over the existing schemes. Here we report that the oxidation manipulation of spin-orbit torque devices triggers a new mechanism, and the resulting torques are estimated to be about two times stronger than that of the spin Hall effect. Our result introduces an entirely new way to engineer the spin-orbit torques for device operation via oxygen manipulation. Combined with electrical gating for the control of the oxygen content, our finding may also pave the way for towards reconfigurable logic devices.

cond-mat.mtrl-sci↗

arXiv2013

Spin-orbit torques in Co/Pd multilayer nanowires

Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (field-like) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 kOe and 5 kOe at 108 A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (~ 1 nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.

cond-mat.mtrl-sci↗

arXiv2013

Stochastic Nonlinear Electrical Characteristics of Graphene

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 10^(3). It is found that graphene channel experience the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices.

cond-mat.mes-hall↗

arXiv2012

Detection of domain wall eigenfrequency in infinity-shaped magnetic nanostructures

The dynamics of a magnetic infinity-shaped nanostructure has been experimentally studied by two different techniques such as the sinusoidal resonance excitation and the damped short pulse excitation to measure the eigenfrequency of domain walls. Direct observation of the magnetic domain wall nucleation has been measured in the frequency domain. Electrical measurements of the domain wall dynamics in the frequency domain reveal the existence of multi-eigenmodes for large excitation amplitudes. The time-resolved measurements show that the frequency of the damped gyration is similar to that of the frequency domain and coexistence of spin wave excitations.

cond-mat.mtrl-sci↗

arXiv2012

Observation of magnetocapacitance in ferromagnetic nanowires

The authors have investigated magnetic domain wall induced capacitance variation as a tool for the detection of magnetic reversal in magnetic nanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetization configurations. The switching fields in the capacitance measurements match with that of the magnetoresistance measurements in the opposite sense. The origin of the magnetocapacitance has been attributed to magnetoresistance. This magnetocapacitance detection technique can be useful for magnetic domain wall studies.

cond-mat.mtrl-sci↗

arXiv2011

Electrical measurement of antivortex wall eigenfrequency

The dynamics of a ferromagnetic antivortex wall has been experimentally studied in a magnetic nanostructure. Two different techniques have been used to independently measure the eigenfrequency of an antivortex wall such as the resonance excitation by sinusoidal microwave and the damped resonance excitation induced by short voltage pulses. Direct observation of antivortex wall nucleation has been measured in the frequency domain for the first time. Electrical measurements of the antivortex dynamics in frequency domain reveal the existence of multi-eigenmodes as well as nonlinear behaviors for large excitation amplitudes. The time resolved measurements of the antivortex wall show that the frequency of the damped gyration is similar to that of frequency domain and coexistence of spin wave excitations.

cond-mat.mtrl-sci↗