arXiv subjects

Kun Gao

Publications and source records attributed to Kun Gao.

40 records · Page 3Linked to original sources

arXiv2014

A user-friendly nano-CT image alignment and 3D reconstruction platform based on LabVIEW

X-ray computed tomography at the nanometer scale (nano-CT) offers a wide range of applications in scientific and industrial areas. Here we describe a reliable, user-friendly and fast software package based on LabVIEW that may allow to perform all procedures after the acquisition of raw projection images in order to obtain the inner structure of the investigated sample. A suitable image alignment process to address misalignment problems among image series due to mechanical manufacturing errors, thermal expansion and other external factors has been considered together with a novel fast parallel beam 3D reconstruction procedure, developed ad hoc to perform the tomographic reconstruction. Remarkably improved reconstruction results obtained at the Beijing Synchrotron Radiation Facility after the image calibration confirmed the fundamental role of this image alignment procedure that minimizes unwanted blurs and additional streaking artifacts always present in reconstructed slices. Moreover, this nano-CT image alignment and its associated 3D reconstruction procedure fully based on LabVIEW routines, significantly reduce the data post-processing cycle, thus making faster and easier the activity of the users during experimental runs.

cs.CE↗

arXiv2014

Origin and enhancement of the 1.3 um luminescence from GaAs treated by ion-implantation and flash lamp annealing

GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which are transmission windows of optical fibers. In this paper we present the photoluminescence at 1.30 um from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 um emission is from transitions between the VAs-donor and X-acceptor pairs.

cond-mat.mtrl-sci↗

arXiv2012

Temperature stable 1.3 μm emission from GaAs

Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we present the realization of quasi- temperature independent photoluminescence at around 1.3 μm from millisecond-range thermally treated GaAs. It is shown that the VAs donor and X acceptor pairs are responsible for the 1.3 μm emission. The influence of the flash-lamp-annealing on the donor-acceptor pair (DAP) formation in the nitrogen and manganese doped and un-doped semi-insulating GaAs wafers were investigated. The concentration of DAP and the 1.3 μm emission can be easily tuned by controlling doping and annealing conditions.

cond-mat.mtrl-sci↗

arXiv2005

Analytical Studies on a Modified Nagel-Schreckenberg Model with the Fukui-Ishibashi Acceleration Rule

We propose and study a one-dimensional traffic flow cellular automaton model of high-speed vehicles with the Fukui-Ishibashi-type (FI) acceleration rule for all cars, and the Nagel-Schreckenberg-type (NS) stochastic delay mechanism. By using the car-oriented mean field theory, we obtain analytically the fundamental diagrams of the average speed and vehicle flux depending on the vehicle density and stochastic delay probability. Our theoretical results, which may contribute to the exact analytical theory of the NS model, are in excellent agreement with numerical simulations.

cond-mat.stat-mech↗