arXiv subjects

Kunie Ishioka

Publications and source records attributed to Kunie Ishioka.

14 recordsLinked to original sources

arXiv2026

Robust coherent phonon mode at GaP/Si(001) heterointerface

Lattice-matched GaP layers without extended defects can be grown on Si(001) substrate via a two-step growth procedure, consisting of low-temperature nucleation followed by high-temperature overgrowth. A transient reflectivity experiment on a thin, low-temperature nucleation layer discovered a previously unknown phonon mode at 2 THz upon below-bandgap optical excitation (Adv. Mater. Interfaces 2025, 2400573). Here we examine the influence of the two-step growth process on the ultrafast carrier and phonon dynamics of the GaP/Si interface. We find that the discrete electronic state, which governed the interfacial carrier dynamics of the thin nucleation layer, becomes suppressed when a thicker layer is formed by high-temperature overgrowth. The coherent 2-THz oscillation is observed also in the high-temperature overgrown structures, at the constant frequency regardless of the GaP layer thickness. Its resonance behavior closely follows that of the carrier dynamics at the respective growth stage. This supports its assignment to a phonon mode generated at the heterointerface and strongly coupled to the interfacial carriers. The phonon amplitude exhibits a non-monotonic dependence on the GaP layer thickness, and its optical polarization-dependence is qualitatively altered by the high-temperature overgrowth, neither of which is accounted for by the carrier-phonon coupling alone. Our results demonstrate that the 2-THz interfacial phonon mode is robust against high-temperature overgrowth, while its amplitude is determined by both coupling to interfacial electronic transitions and atomic-scale structural reorganization at the interface.

cond-mat.mtrl-sci↗

arXiv2024

Suppression of shear ionic motions in bismuth by coupling with large-amplitude internal displacement

Bismuth, with its rhombohedral crystalline structure and two Raman active phonon modes corresponding to the internal displacement ($A_{1g}$) and shear ($E_{g}$) ionic motions, offers an ideal target for the investigation of the phonon-phonon and electron-phonon couplings under photoexcitation. We perform transient reflectivity measurements of bismuth single crystal at 11 K over wide range of absorbed laser fluence up to $F_\text{abs}=9$ mJ/cm$^2$, at which a sign of an irreversible surface damage is observed. At the minimum fluence examined (0.1 mJ/cm$^2$) the coherent $A_{1g}$ and $E_g$ oscillations are a cosine and a sine functions of time, as are consistent with their generations in the displacive and impulsive limits, respectively. With increasing fluence the initial phases of the both modes deviate from their low-fluence values, indicating a finite time required for the transition from the ground-state potential energy surface (PES) to the excited-state one. Surprisingly, the $E_g$ amplitude increases with increasing fluence up to 3 mJ/cm$^2$ and then turns to an apparent decrease, in contrast to the monotonic increase of the $A_{1g}$ amplitude up to 6 mJ/cm$^2$. The contrasted behaviors can be understood by considering a two-dimensional PES, where the strongly driven $A_{1g}$ oscillation leads to a temporal fluctuation of the PES along the $E_g$ coordinate and thereby to a loss in the $E_g$ oscillation coherence at high fluences.

cond-mat.mtrl-sci↗

arXiv2023

Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001)

Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at pump-photon energies of 1.4 eV, which can be assigned to an optical transition between electronic interface states. The transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the phonon mode in combination with a characteristic wavelength-dependence of, both, its frequency and initial phase, strongly indicate that the 2-THz mode is a difference-combination mode of a GaP-like and a Si-like phonon at the heterointerface and that this second-order scattering process can be enhanced by a double resonance involving the interfacial electronic states.

cond-mat.mtrl-sci↗

arXiv2023

Selective coupling of coherent optical phonons in YBa$_2$Cu$_3$O$_{7-δ}$ with electronic transitions

We investigate coherent lattice dynamics in optimally doped YBa$_2$Cu$_3$O$_{7-δ}$ driven by ultrashort ($\sim$ 12 fs) near infrared (NIR) and near ultraviolet (NUV) pulses. Transient reflectivity experiments, performed at room temperature and under moderate ($<$0.1 mJ/cm$^2$) excitation fluence, reveal $A_g$-symmetry phonon modes related to the O(2,3) bending in the CuO$_2$ planes and to the apical O(4) stretching at frequencies between 10 and 15 THz, in addition to the previously reported Ba and Cu(2) vibrations at 3.5 and 4.5 THz. The relative coherent phonon amplitudes are in stark contrast to the relative phonon intensities in the spontaneous Raman scattering spectrum excited at the same wavelength. This contrast indicates mode-dependent contributions of the Raman and non-Raman mechanisms to the coherent phonon generation. We show that the particularly intense coherent Cu(2) phonon, together with its initial phase, supports its generation predominately via a displacive mechanism, possibly involving the charge transfer within the CuO$_2$ planes. The small amplitude of the coherent out-of-phase O(2,3) bending mode at 10 THz also suggests the involvement of non-Raman generation mechanism. The generation of the other coherent phonons can in principle be explained within the framework of Raman mechanism. When the pump light has the polarization component perpendicular to the CuO$_2$ plane, the coherent O(4) mode at 15 THz is strongly enhanced compared to the in-plane excitation, corresponding to the large polarizability component associated with the hopping between the apical and the chain oxygens, O(4) and O(1).

cond-mat.mtrl-sci↗

arXiv2021

Separation of interface and substrate carrier dynamics at a heterointerface based on coherent optical phonons

Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to distinguish contributions to the signal from the various layers. In this work, we perform transient reflectivity measurements on lattice-matched GaP/Si(001) using a near infrared pulse, to which GaP is transparent. The pump laser pulse can generate coherent longitudinal optical (LO) phonons both in the GaP overlayer as well as in the Si substrate which have distinct frequencies. This enables us to track the amplitude of the respective signal contributions as a function of GaP layer thickness $d$. The Si phonon amplitude in the signal exhibits an oscillatory behavior with increasing $d$. This can be quantitatively explained by the interference of the probe light reflected at the air/GaP/Si heterointerface. Based on this knowledge, we can then separate the interface- and the substrate-contributions in the carrier-induced non-oscillatory transient reflectivity signal. The obtained interface signal provides evidence for ultrafast carrier injection from the Si substrate into the GaP overlayer. This is also corroborated by examining the deviation of the polarization-dependence of the GaP coherent optical phonon signal from that of the bulk semiconductor.

cond-mat.mes-hall↗

arXiv2021

Strongly Anharmonic Organic Cation Vibrations in Hybrid Lead Halide Perovskite CH3NH3PbI3 on Electronic Ground State

Ultrafast vibrational dynamics of inorganic-organic hybrid lead halide perovskite CH3NH3PbI$ in the room-temperature tetragonal phase is investigated under moderate photoexcitation slightly below the band gap. Time-resolved optical Kerr effect signal exhibits periodic modulations due to the libration and twisting of the methylammonium molecule at 4 and 8 THz, in addition to the inorganic sublattice deformation at 1.2 THz. These oscillations are heavily damped, and their frequencies exhibit blueshifts with increasing pump density, contrary to the expectation from conventional laser heating. Our ab initio lattice dynamics simulations reveal strongly anharmonic vibrational potentials for the zone-center optical phonon modes, and thereby confirm the anharmonicity to be the origin of the experimentally observed frequency blueshifts.

cond-mat.mtrl-sci↗

arXiv2018

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(001) heterointerfaces

Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP opverlayer and in the Si substrate. The coupling of the GaP LO phonons with photoexcited plasma is reduced significantly with decreasing the GaP layer thickness from 56 to 16 nm due to the quasi-two-dimensional confinement of the plasma. The same laser pulse can also generate coherent longitudinal acoustic (LA) phonons in the form of a strain pulse. The strain induces not only a periodic modulation in the optical reflectivity as they propagate in the semiconductors, but also a sharp spike when it arrives at the GaP layer boundaries. The acoustic pulse induced at the GaP/Si interface is remarkably stronger than that at the Si surface, suggesting a possible application of the GaP/Si heterostructure as an opto-acoustic transducer. The amplitude and the phase of the reflectivity modulation varies with the GaP layer thickness, which can be understood in terms of the interference caused by the multiple acoustic pulses generated at the top surface and at the buried interface.

cond-mat.mtrl-sci↗

arXiv2017

Sub-picosecond acoustic pulses at buried GaP/Si interfaces

We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP layers grown on Si(001) gives rise to a sharp spike in transient reflectivity due to the acoustic pulse generated at the GaP/Si interface and detected at the GaP surface and vice versa. The extremely short width of the reflectivity spike, 0.5 ps, would translate to a spatial extent of 3 nm or 10 atomic bilayers, which is comparable with the width of the intermixing layer at the GaP/Si interface. The reflectivity signals are also modified by quasi-periodic Brillouin oscillations of GaP and Si arising from the acoustic pulses during the propagation in the crystals. The present results demonstrate the potential application of the simple optical pump-probe scheme in the nondestructive evaluation of the buried semiconductor interface quality.

cond-mat.mtrl-sci↗

arXiv2017

Intrinsic coherent acoustic phonons in indirect band gap semiconductors Si and GaP

We report on the intrinsic optical generation and detection of coherent acoustic phonons at (001)-oriented bulk Si and GaP without metallic phonon transducer structures. Photoexcitation by a 3.1-eV laser pulse generates a normal strain pulse within the $\sim$100-nm penetration depth in both semiconductors. The subsequent propagation of the strain pulse into the bulk is detected with a delayed optical probe as a periodic modulation of the optical reflectivity. Our theoretical model explains quantitatively the generation of the acoustic pulse via the deformation potential electron-phonon coupling and detection in terms of the spatially and temporally dependent photoelastic effect for both semiconductors. Comparison with our theoretical model reveals that the experimental strain pulses have finite build-up times of 1.2 and 0.4 ps for GaP and Si, which are comparable with the time required for the photoexcited electrons to transfer to the lowest X valley through intervalley scattering. The deformation potential coupling related to the acoustic pulse generation for GaP is estimated to be twice as strong as that for Si from our experiments, in agreement with a previous theoretical prediction.

cond-mat.mtrl-sci↗

arXiv2017

Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy

Efficient charge separation at the interfaces between the perovskite and with the carrier transport layers is crucial for perovskite solar cells to achieve high power conversion efficiency. We systematically investigate the hole injection dynamics from MAPbI$_3$ perovskite to three typical hole transport materials (HTMs) PEDOT:PSS, PTAA and NiO$_x$ by means of pump-probe transmission measurements. We photoexcite only near the MAPbI$_3$/HTM interface or near the back surface, and measure the differential transient transmission between the two excitation configurations to extract the carrier dynamics directly related to the hole injection. The differential transmission signals directly monitor the hole injections to PTAA and PEDOT:PSS being complete within 1 and 2 ps, respectively, and that to NiO$_x$ exhibiting an additional slow process of 40 ps time scale. The obtained injection dynamics are discussed in comparison with the device performance of the solar cells containing the same MAPbI$_3$/HTM interfaces.

cond-mat.mtrl-sci↗

arXiv2016

Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy

We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical models. The obtained depth profiles are in quantitative agreement with the band bending determinations for the same samples in a previous coherent phonon spectroscopic study. Our results demonstrate the applicability of the HAXPES with varying incident photon energy to characterize the electric potential profiles at buried semiconductor heterointerfaces.

cond-mat.mes-hall↗

arXiv2013

Effect of n- and p-type Doping on Coherent Phonons in GaN

Effect of doping on the carrier-phonon interaction in wurtzite GaN is investigated by pump-probe reflectivity measurements using 3.1 eV light in near resonance with the fundamental band gap of 3.39 eV. Coherent modulations of the reflectivity due to the E2 and the A1(LO) modes, as well as the 2A1(LO) overtone are observed. Doping of acceptor and more so for donor atoms enhances the dephasing of the polar A1(LO) phonon via coupling with plasmons, with the effect of donors being stronger. Doping also enhances the relative amplitude of the coherent A1(LO) phonon with respect to that of the high-frequency E2 phonon, though it does not affect the relative intensity in Raman spectroscopic measurements. This enhanced coherent amplitude indicates that transient depletion field screening (TDFS), in addition to impulsive stimulated Raman scattering (ISRS), contribute to generation of the coherent polar phonons even for sub-band gap excitation. Because the TDFS mechanism requires photoexcitation of carriers, we argue that the interband transition is made possible at the surface with photon energies below the bulk band gap through the Franz-Keldysh effect.

cond-mat.mtrl-sci↗

arXiv2007

Ultrafast Electron-Phonon Decoupling in Graphite

We report the ultrafast dynamics of the 47.4 THz coherent phonons of graphite interacting with a photoinduced non-equilibrium electron-hole plasma. Unlike conventional materials, upon photoexcitation the phonon frequency of graphite upshifts, and within a few picoseconds relaxes to the stationary value. Our first-principles density functional calculations demonstrate that the phonon stiffening stems from the light-induced decoupling of the non-adiabatic electron-phonon interaction by creating the non-equilibrium electron-hole plasma. Time-resolved vibrational spectroscopy provides a window on the ultrafast non-equilibrium electron dynamics.

cond-mat.other↗

arXiv2005

Ultrafast dynamics of coherent optical phonons and nonequilibrium electrons in transition metals

The femtosecond optical pump-probe technique was used to study dynamics of photoexcited electrons and coherent optical phonons in transition metals Zn and Cd as a function of temperature and excitation level. The optical response in time domain is well fitted by linear combination of a damped harmonic oscillation because of excitation of coherent $E_{2g}$ phonon and a subpicosecond transient response due to electron-phonon thermalization. The electron-phonon thermalization time monotonically increases with temperature, consistent with the thermomodulation scenario, where at high temperatures the system can be well explained by the two-temperature model, while below $\approx$ 50 K the nonthermal electron model needs to be applied. As the lattice temperature increases, the damping of the coherent $E_{2g}$ phonon increases, while the amplitudes of both fast electronic response and the coherent $E_{2g}$ phonon decrease. The temperature dependence of the damping of the $E_{2g}$ phonon indicates that population decay of the coherent optical phonon due to anharmonic phonon-phonon coupling dominates the decay process. We present a model that accounts for the observed temperature dependence of the amplitude assuming the photoinduced absorption mechanism, where the signal amplitude is proportional to the photoinduced change in the quasiparticle density. The result that the amplitude of the $E_{2g}$ phonon follows the temperature dependence of the amplitude of the fast electronic transient indicates that under the resonant condition both electronic and phononic responses are proportional to the change in the dielectric function.

cond-mat.str-el↗