arXiv subjects

Kwang S. Kim

Publications and source records attributed to Kwang S. Kim.

25 records · Page 2Linked to original sources

arXiv2012

Uncertainties in Gapped Graphene

Motivated by graphene-based quantum computer we examine the time-dependence of the position-momentum and position-velocity uncertainties in the monolayer gapped graphene. The effect of the energy gap to the uncertainties is shown to appear via the Compton-like wavelength $λ_c$. The uncertainties in the graphene are mainly contributed by two phenomena, spreading and zitterbewegung. While the former determines the uncertainties in the long-range of time, the latter gives the highly oscillation to the uncertainties in the short-range of time. The uncertainties in the graphene are compared with the corresponding values for the usual free Hamiltonian $\hat{H}_{free} = (p_1^2 + p_2^2) / 2 M$. It is shown that the uncertainties can be under control within the quantum mechanical law if one can choose the gap parameter $λ_c$ freely.

quant-ph↗

arXiv2011

High-resolution spatial mapping of the temperature distribution of a Joule self-heated graphene nanoribbon

We investigate the temperature distributions of Joule self-heated graphene nanoribbons (GNRs) with a spatial resolution finer than 100 nm by scanning thermal microscopy (SThM). The SThM probe is calibrated using the Raman G mode Stokes/anti-Stokes intensity ratio as a function of electric power applied to the GNR devices. From a spatial map of the temperature distribution, heat dissipation and transport pathways are investigated. By combining SThM and scanning gate microscopy data from a defected GNR, we observe hot spot formation at well-defined, localized sites.

cond-mat.mes-hall↗

arXiv2010

30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes

We report that 30-inch scale multiple roll-to-roll transfer and wet chemical doping considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which is superior to commercial transparent electrodes such as indium tin oxides (ITO). The monolayer of graphene shows sheet resistances as low as ~125 Ohm/sq with 97.4% optical transmittance and half-integer quantum Hall effect, indicating the high-quality of these graphene films. As a practical application, we also fabricated a touch screen panel device based on the graphene transparent electrodes, showing extraordinary mechanical and electrical performances.

cond-mat.mtrl-sci↗

arXiv2009

Tuning the graphene work function by electric field effect

We report variation of the work function for single and bi-layer graphene devices measured by scanning Kelvin probe microscopy (SKPM). Using the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point. Upon biasing the device, the surface potential map obtained by SKPM provides a reliable way to measure the contact resistance of individual electrodes contacting graphene.

cond-mat.mes-hall↗

arXiv2009

Nonstationary theory of magnetic field induced current for molecular spin nanojunction

For the study of molecular spin junctions, we take into account two types of couplings between the molecule and the metal leads: (i) electron transfer that gives rise to net current in the biased junction and (ii) energy transfer between the molecule and the leads. Using a rotating wave approximation in the Heisenberg representation, we derive a set of differential equations for the expectation values of relevant variables: electron and phonon populations and molecular polarization. A magnetic field control method to enhance the charge transfer at spin nanojunctions, which characterizes the molecule feature, is discussed. An approximate analytical solution of the resulting dynamical equation is supported by numerical solution. The magnetic control by charge transfer is described by transient pseudo-fermions of electrons interacting with spins. The rapid adiabatic passage of the energy between the molecule and the leads is taken into account. The current for molecular spin nanojunctions is derived.

cond-mat.mes-hall↗

arXiv2007

Carbon nanotube, graphene, nanowire, and molecule-based electron and spin transport phenomena using the non-equilibrium Green function method at the level of first principles theory

Based on density functional theory (DFT), we have developed algorithms and a program code to investigate the electron transport characteristics for a variety of nanometer scaled devices in the presence of an external bias voltage. We employed basis sets comprised of linear combinations of numerical type atomic orbitals and k-point sampling for the realistic modeling of the bulk electrode. The scheme coupled with the matrix version of the non-equilibrium Green function method enables determination of the transmission coefficients at a given energy and voltage in a self-consistent manner, as well as the corresponding current-voltage (I-V) characteristics. This scheme has advantages because it is applicable to large systems, easily transportable to different types of quantum chemistry packages, and extendable to describe time-dependent phenomena or inelastic scatterings. It has been applied to diverse types of practical electronic devices such as carbon nanotubes, graphene nano-ribbons, metallic nanowires, and molecular electronic devices. The quantum conductance phenomena for systems involving quantum point contacts and I-V curves are described for the dithiol-benzene molecule in contact with two Au electrodes using the k-point sampling method.

cond-mat.mes-hall↗

arXiv2001

Large Orbital Magnetic Moment and Coulomb Correlation effects in FeBr2

We have performed an all-electron fully relativistic density functional calculation to study the magnetic properties of FeBr2. We show for the first time that the correlation effect enhances the contribution from orbital degrees of freedom of $d$ electrons to the total magnetic moment on Fe$^{2+}$ as opposed to common notion of nearly total quenching of the orbital moment on Fe$^{2+}$ site. The insulating nature of the system is correctly predicted when the Hubbard parameter U is included. Energy bands around the gap are very narrow in width and originate from the localized Fe-3$d$ orbitals, which indicates that FeBr2 is a typical example of the Mott insulator.

cond-mat.str-el↗