arXiv subjects

Kyoungjun Lee

Publications and source records attributed to Kyoungjun Lee.

10 recordsLinked to original sources

arXiv2026

Electric-Field-Induced Second Harmonic Generation at a Reconfigurable LaAlO$_3$/SrTiO$_3$ Nanojunction

Electrically tunable nonlinear optical responses at the nanoscale remain challenging to achieve because conventional nonlinear materials lack the combination of large susceptibility, nanoscale confinement, and in situ reconfigurability. Here we report electric-field-induced second harmonic (EFISH) generation from a nanoscale tunnel junction defined by conductive atomic force microscope lithography at the LaAlO$_3$/SrTiO$_3$ interface. A conducting channel written at the interface is interrupted by a nanoscale insulating gap, across which applied DC bias produces local electric fields exceeding $10^7$ V/m. The SHG signal is spatially localized at the junction, exhibits a quadratic bias dependence described by $I(2\omega) \propto |\chi^{(2)}_\mathrm{0} + \chi^{(3)} E_\mathrm{DC}|^2$ with no hysteresis, a modulation depth exceeding 380% at $|V_\mathrm{DC}| = 1$ V, and shows a two-lobed input-polarization pattern aligned with the junction axis, consistent with EFISH from a centrosymmetric host. Calibration against a BBO reference crystal gives $|\chi^{(3)}| \approx 1\times10^{-19}$ m$^2$/V$^2$ at 6 K. These results establish cAFM-written oxide nanojunctions as a reconfigurable platform for nanoscale nonlinear optics in which the junction geometry sets the symmetry of the response and the large field-induced $\chi^{(2)}$ of SrTiO$_3$ provides the optical nonlinearity. Because the nonlinearity is both generated and read out within the same nanoscale gap, the junction operates simultaneously as a subwavelength source and a near-field detector of optical nonlinearity.

cond-mat.mes-hall↗

arXiv2026

Imaging GHz surface acoustic wave modes in electrostricted LaAlO$_3$/SrTiO$_3$ heterostructures

The LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface hosts a gate-tunable superconducting two-dimensional electron gas (2DEG) which can be programmed to create quantum devices such as ballistic electron waveguides and quantum dots. To fully exploit this platform for quantum transport, a key requirement is the ability to shuttle single electrons, electron pairs, and other exotic states between spatially separated devices with precision. Surface acoustic waves (SAWs), which travel along the surface of a solid, offer a powerful route to achieve this through their moving electrical potential that captures and transfers electrons. %acoustoelectric coupling. In particular, SAWs in the GHz regime enable fast, controlled transport of individual quantum particles. Although this approach is well-explored in GaAs-based 2DEG, SAW generation in STO remains largely unexplored due to the lack of intrinsic piezoelectricity at room temperature. Here, we investigate room-temperature SAWs in LAO/STO and observe SAW modes up to 2.2 GHz with very low propagation loss of the order $10^{-3}$ dB per wavelength. To directly visualize these modes, we employ Atomic Acoustic Force Microscopy (AAFM), achieving sub-micron resolution imaging of the SAW wave forms, providing insight into the electrostriction-induced SAW generation mechanism. Our measurements indicate a shear horizontal-type mode, which provides the ability to couple to in-plane degrees of freedom for future acoustoelectric and quantum device applications. This work studies the fundamentals of SAW excitation and propagation on STO, a widely used and commercially available substrate, enabling straightforward coupling of SAWs to a broad range of materials that can be grown or transferred onto STO.

cond-mat.str-el↗

arXiv2026

Local probing of superconductivity at oxide interfaces with atomic force microscopy

Superconductivity in strontium titanate has remained enigmatic for more than 50 years. The LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerface enables systematic dimensional confinement, from a two-dimensional electron gas to quasi-one-dimensional nanostructures, providing access to this quantum state. Transport measurements in patterned devices reveal puzzling phenomena, including width-independent critical currents and anomalous pairing suggestive of one-dimensional behavior, but direct local probes of the patterned interface and its superconducting response have been lacking. Here we use ultralow-temperature non-contact atomic force microscopy, dissipation spectroscopy, and Kelvin probe force microscopy to locally probe signatures of superconductivity in patterned LAO/STO devices. Spatially resolved energy-dissipation measurements reveal superconducting signatures, with features confined in some devices to edge channels approximately 200 nm wide. Dissipation spectra exhibit a characteristic nonlinear bias dependence that provides a local diagnostic of superconductivity, consistent with the intermediate carrier-density regime near the superconducting dome, and persisting up to the critical field. These results establish atomic force microscopy as a local probe of superconductivity in patterned LAO/STO structures and provide a route to addressing longstanding questions about quantum confinement and transport anomalies in correlated oxide nanostructures.

cond-mat.supr-con↗

arXiv2025

Electrical Characterization of High-k (k>115) Crystalline SrTiO3 (STO) thin film integration with GaN with Nanomembrane Transfer Process

High-k (115), crystalline SrTiO3 (STO) thin film was transferred on GaN for potential applications in power devices (transistor and diodes) by nanomembrane transfer method and the detailed electrical properties such as leakage current, CV profiles, dielectric constant, frequency dispersion was reported from fabricated MOSCAP structures. The leakage current was negligible (under noise-level of tool) up to 6 V and 11 V for 50 nm and 200 nm STO membrane respectively A high-quality dielectric was indicated by the CV profile, which showed almost negligible frequency dispersion in the frequency range of 10 kHz to 500 kHz. The dielectric constant was 50 to 82 with the 50 nm thick STO membrane and 115 to 186 in the 200 nm thick STO membrane. Thermal annealing of the membrane in ambient conditions at 250 degrees for 2 hours led to a slight improvement in the dielectric constant (8 to 20 percent), albeit at the expense of degraded leakage current performance, as indicated by a reduction of 1 V to 3 V in the "no leakage region" of the IV curves after annealing. The possible physical mechanisms responsible for these changes were also analyzed and discussed.

cond-mat.mtrl-sci↗

arXiv2025

Control of out-of-plane anti-damping spin torque with a canted ferromagnetic spin source

To achieve efficient anti-damping switching of nanoscale magnetic memories with perpendicular magnetic anisotropy using spin-orbit torque requires that the anti-damping spin-orbit torque have a strong out-of-plane component. The spin anomalous Hall effect and the planar Hall effect spin current produced by a ferromagnetic layer are candidate mechanisms for producing such an out-of-plane anti-damping torque, but both require that the magnetic moment of the spin source layer be canted partly out of the sample plane at zero applied magnetic field. Here we demonstrate such a canted configuration for a ferromagnetic SrRuO3 layer and we characterize all vector components of the torque that it produces, including non-zero out-of-plane anti-damping torques. We verify that the out-of-plane spin component can be tuned by the orientation of magnetic moment, with significant contributions from both the spin anomalous Hall effect and the planar Hall effect spin current.

cond-mat.mes-hall↗

arXiv2025

Twisted oxide membrane interface by local atomic registry design

Interplay of lattice, orbital, and charge degrees of freedom in complex oxide materials has hosted a plethora of exotic quantum phases and physical properties. Recent advances in synthesis of freestanding complex oxide membranes and twisted heterostructures assembled from membranes provide new opportunities for discovery using moir\'e design with local lattice control. To this end, we designed moir\'e crystals at the coincidence site lattice condition, providing commensurate structure within the moir\'e supercell arising from the multi-atom complex oxide unit cell. We fabricated such twisted bilayers from freestanding SrTiO3 membranes and used depth sectioning-based TEM methods to discover ordered charge states at the moir\'e interface. By selectively imaging SrTiO3 atomic planes at different depths through the bilayer, we clearly resolved the moir\'e periodic structure at the twisted interface and found that it exhibits lattice-dependent charge disproportionation in the local atomic registry within the moir\'e supercell. Our density-functional modelling of the twisted oxide interface predicts that these moir\'e phenomena are accompanied by the emergence of a two-dimensional flat band that can drive new electronic phases. Our work provides a novel guideline for controlling moir\'e periodicity in twisted oxides and opens pathways to exploit the new functionalities via moir\'e lattice-driven charge-orbital correlation.

cond-mat.mtrl-sci↗

arXiv2024

Electric and Magnetic Field-dependent Tunneling between Coupled Nanowires

Coupled quasi-one-dimensional (quasi-1D) electron systems host rich emergent physics that cannot be accounted for by understanding isolated 1D electron systems alone. Open questions remain about how transport in these arrays can be manipulated by the application of external electric and magnetic fields. In this theoretical study, we consider a pair of coupled nanowires with non-interacting electrons. We find that a metal-insulator transition is induced by an out-of-plane magnetic field and a transverse potential bias on an array of such coupled wires. We demonstrate the existence of distinct conductance features and highlight the crucial role played by the field dependence of the interwire potential barrier on transport properties. These predictions agree well with transport experiments performed on coupled nanowires sketched on an LaAlO3/SrTiO3 interface. Since our model makes minimal assumptions, we expect our predictions to hold for a wide class of coupled 1D systems.

cond-mat.mes-hall↗

arXiv2024

Magnetically Tuned Metal-Insulator Transition in LaAlO$_3$/SrTiO$_3$ Nanowire Arrays

A wide family of two dimensional (2D) systems, including stripe-phase superconductors, sliding Luttinger liquids, and anisotropic 2D materials, can be modeled by an array of coupled one-dimensional (1D) electron channels or nanowire arrays. Here we report experiments in arrays of conducting nanowires with gate and field tunable interwire coupling, that are programmed at the LaAlO$_3$/SrTiO$_3$ interface. We find a magnetically-tuned metal-to-insulator transition in which the transverse resistance of the nanowire array increases by up to four orders of magnitude. To explain this behavior, we develop a minimal model of a coupled two-wire system which agrees well with observed phenomena. These nanowire arrays can serve as a model systems to understand the origin of exotic behavior in correlated materials via analog quantum simulation.

cond-mat.mes-hall↗

arXiv2024

Phonon-pair-driven Ferroelectricity Causes Costless Domain-walls and Bulk-boundary Duality

Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles simulations unveil that the robust ferroelectricity is supported by bosonic pairing of all the anionic phonons in bulk HfO2. Strikingly, the paired phonons strongly bond with each other and successfully reach the center of the domain wall without losing their integrity and produce bulk-like domain walls. We then confirmed preservation of the bulk phonon displacements and consequently full revival of the bulk structure at domain walls via aberration-corrected STEM. The newly found duality between the bulk and the domain wall sheds light on previously enigmatic properties such as zero-energy domain walls, perfect Ising-type polar ordering, and exceptionally robust ferroelectricity at the sub-nm scales. The phonon-pairing discovered here is robust against physical boundaries such as domain walls and enables zero momentum and zero-energy cost local ferroelectric switching. This phenomenon demonstrated in Si-compatible ferroelectrics provides a novel technological platform where data storage on domain walls is as feasible as that within the domains, thereby expanding the potential for high-density data storage and advanced ferroelectric applications.

cond-mat.mtrl-sci↗

arXiv2019

Room Temperature Ferroelectric Ferromagnet in 1D Tetrahedral Chain Network

Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Because of the fundamentally different mechanism of ferroelectricity in a two-dimensional network, one can further challenge an uncharted mechanism of ferroelectricity in a one-dimensional channel of MOx and estimate its feasibility. This communication presents ferroelectricity and coupled ferromagnetism in a one-dimensional FeO4 tetrahedral chain network of a brownmillerite SrFeO2.5 epitaxial thin film. The result provides a new paradigm for designing low-dimensional MOx networks, which is expected to benefit the realization of macroscopic ferro-ordering materials including ferroelectric ferromagnets.

cond-mat.mtrl-sci↗