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Kyoungsik Kim

Publications and source records attributed to Kyoungsik Kim.

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Bridging Quantum Computing Paradigms toward Semiconductor Yield: A Controlled CV-versus-DV Comparison on Wafer-Map Defect Classification

Realizing quantum neural networks (QNNs) in industry requires knowing which quantum computing paradigm suits which task. Motivated by AI accelerators and high-bandwidth memory, where die stacking makes wafer-level defect screening central to yield, we study WM-811K wafer-map defect classification (eight classes), comparing the dominant paradigms, continuous-variable (CV) and discrete-variable (DV), under controlled conditions. To isolate the quantum circuit as the sole variable, a shared convolutional backbone (~4.3M parameters) feeds interchangeable heads (classical dense, CV-QNN, or DV-QNN) as the only structural difference; each quantum head is scaled over three sizes (3, 4, 8 qumodes/qubits). The CV head consistently outperforms the DV head: at four qumodes/qubits it reaches 79.7 +/- 1.8% accuracy versus 61.6 +/- 1.4%, a non-overlapping 18-point gap. The advantage is sharpest on the spatially localized Edge-Loc class, easily confused with Scratch, which CV recovers with recall 0.66 +/- 0.06 while DV fails at every size (<=0.05), showing the structured CV layer better captures fine spatial distinctions between defect types. Training curves show the DV limitation is a representational-capacity ceiling, not an optimization failure; at the Fock cutoff used here (d = 2) the CV advantage reflects two intrinsic properties, a structured, neural-network-analogue layer and continuous phase-space encoding, not Hilbert-space dimensionality. On IBM hardware, DV accuracy holds at shallow depth, degrading only at the deepest circuit. Both quantum heads remain below the classical baseline (85.0%), but the controlled setting isolates where a structured head already helps and, as noise and scale improve, which paradigm can deliver practical advantage.

quant-ph

Restricted Modulation Freedom Enhances Noise Robustness in Coherent Diffractive Optical Networks

In coherent diffractive optical networks, greater modulation freedom allows more flexible optimization for clean inputs, but its effect on noise robustness and its physical origin remain unclear. We derive an analytical framework that identifies the physical mechanism linking modulation freedom to noise robustness. To establish this connection, we compare a continuous DDNN (C-DDNN) with continuous amplitude and phase modulation and a binary-mask DDNN (BM-DDNN) with binary amplitude modulation. Trained only on clean MNIST data, the seven-layer BM-DDNN has 1.83 percentage points lower clean test accuracy but 32.82 percentage points higher noisy test accuracy under pixel-wise Gaussian noise. This robustness advantage cannot be explained by lower total noise-only intensity at the imaging plane: the BM-DDNN has 3.22 times the noise-only intensity but 8.64 times the clean-signal intensity of the C-DDNN, reducing noise contamination relative to the clean signal. We show that this difference arises from a clean-signal transmission bias generated by spatial correlations between the structured clean-signal field and learned modulation patterns. We quantify this mechanism with a cumulative transmission-bias factor K, linking modulation freedom to relative noise contamination and robustness. The C-DDNN exhibits a stronger suppressive bias (more negative K), whereas the BM-DDNN exhibits a weaker bias (less negative K^{\tilde}), yielding the consistent ordering K<K^{\tilde}. Because K requires only clean-data forward passes, it serves as a robustness screening metric before noisy-input simulations.

physics.optics

Polarization manipulation of giant photonic spin Hall effect using wave-guiding effect

In plasmonic systems, the enhanced photonic spin Hall effect (PSHE) was previously possible only for horizontal polarization. By employing the wave-guiding surface plasmon resonance (WG-SPR) effect, we report a giant photonic spin Hall effect (G-PSHE) of reflected light for both horizontal and vertical polarization waves. We investigated the polarization-manipulated G-PSHE in the Kretschmann configuration with an additional glass dielectric layer. This additional dielectric layer allowed us to achieve millimeter-scale (more than 2 mm to sub-millimeter) G-PSHE. We achieved polarization manipulation by designing novel structures employing wave-guiding and SPR theory. Using a simulation study, we investigated the impact of an additional thin dielectric layer on G-PSHE. This study enables the potential application of both horizontal and vertical polarization-based quantum devices and sensors for which light spin plays a pivotal role.

physics.optics