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László P. Biró

Publications and source records attributed to László P. Biró.

7 recordsLinked to original sources

Large intravalley scattering due to pseudo-magnetic fields in crumpled graphene

The pseudo-magnetic field generated by mechanical strain in graphene can have dramatic consequences on the behavior of electrons and holes. Here we show that pseudo-magnetic field fluctuations present in crumpled graphene can induce significant intravalley scattering of charge carriers. We detect this by measuring the confocal Raman spectra of crumpled areas, where we observe an increase of the D'/D peak intensity ratio by up to a factor of 300. We reproduce our observations by numerical calculation of the double resonant Raman spectra and interpret the results as experimental evidence of the phase shift suffered by Dirac charge carriers in the presence of a pseudo-magnetic field. This lifts the restriction on complete intravalley backscattering of Dirac fermions.

cond-mat.mes-hall↗

Preparing local strain patterns in graphene by atomic force microscope based indentation

Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared devices. To engineer the properties of graphene via mechanical deformation, versatile new techniques are needed to pattern strain profiles in a controlled manner. Here we present a process by which strain can be created in substrate supported graphene layers. Our atomic force microscope-based technique opens up new possibilities in tailoring the properties of graphene using mechanical strain.

cond-mat.mes-hall↗

Mapping the nanomechanical properties of graphene suspended on silica nanoparticles

Using nanoparticles to impart extrinsic rippling in graphene is a relatively new method to induce strain and to tailor the properties of graphene. Here we study the structure and elastic properties of graphene grown by chemical vapour deposition and transferred onto a continuous layer of SiO2 nanoparticles with diameters of around 25 nm, prepared by Langmuir-Blodgett technique on Si substrate. We show that the transferred graphene follows only roughly the morphology induced by nanoparticles. The graphene membrane parts bridging the nanoparticles are suspended and their adhesion to the AFM tip is larger compared to that of supported graphene parts. These suspended graphene regions can be deformed with forces of the order of 10 nN. The elastic modulus of graphene was determined from indentation measurements performed on suspended membrane regions with diameters in the 100 nm range.

cond-mat.mes-hall↗

Moiré superlattices in strained graphene-gold hybrid nanostructures

Graphene-metal nanoparticle hybrid materials potentially display not only the unique properties of metal nanoparticles and those of graphene, but also additional novel properties due to the interaction between graphene and nanoparticles. This study shows that gold nanoislands can be used to tailor the local electronic properties of graphene. Graphene on crystalline gold nanoislands exhibits moiré superlattices, which generate secondary Dirac points in the local density of states. Conversely, the graphene covered gold regions undergo a polycrystalline to Au(111) phase transition upon annealing. Moreover, the nanoscale coexistence of moiré superlattices with different moiré periodicities has also been revealed. Several of these moiré periodicities are anomalously large, which cannot be explained by the standard lattice mismatch between the graphene and the topmost Au(111) layers. Density functional theory and molecular dynamics simulations show for the first time that in such cases the graphene and the interfacial metallic layer is strained, leading to distorted lattice constants, and consequently to reduced misfit. Room temperature charge localization induced by a large wavelength moiré pattern is also observed by scanning tunneling spectroscopy. These findings can open a route towards the strain engineering of graphene/metal interfaces with various moiré superlattices and tailored electronic properties for nanoscale information coding.

cond-mat.mes-hall↗

The structure and properties of graphene supported on gold nanoparticles

Graphene covered metal nanoparticles constitute a novel type of hybrid materials, which provide a unique platform to study plasmonic effects, surface-enhanced Raman scattering (SERS), and metal-graphene interactions at the nanoscale. Such a hybrid material is fabricated by transferring graphene grown by chemical vapor deposition onto closely spaced gold nanoparticles produced on a silica wafer. The morphology and physical properties of nanoparticle-supported graphene is investigated by atomic force microscopy, optical reflectance spectroscopy, scanning tunneling microscopy and spectroscopy (STM/STS), and confocal Raman spectroscopy. This study shows that the graphene Raman peaks are enhanced by a factor which depends on the excitation wavelength, in accordance with the surface plasmon resonance of the gold nanoparticles, and also on the graphene-nanoparticle distance which is tuned by annealing at moderate temperatures. The observed SERS activity is correlated to the nanoscale corrugation of graphene. STM and STS measurements show that the local density of electronic states in graphene is modulated by the underlying gold nanoparticles.

cond-mat.mes-hall↗

Effect of the disorder in graphene grain boundaries: A wave packet dynamics study

Chemical vapor deposition (CVD) on Cu foil is one of the most promising methods to produce graphene samples despite of introducing numerous grain boundaries into the perfect graphene lattice. A rich variety of GB structures can be realized experimentally by controlling the parameters in the CVD method. Grain boundaries contain non-hexagonal carbon rings (4,5,7,8 membered rings) and vacancies in various ratios and arrangements. Using wave packet dynamic (WPD) simulations and tight-binding electronic structure calculations, we have studied the effect of the structure of GBs on the transport properties. Three model GBs with increasing disorder were created in the computer: a periodic 5-7 GB, a "serpentine" GB, and a disordered GB containing 4,8 membered rings and vacancies. It was found that for small energies (E=EF+-1eV) the transmission decreases with increasing disorder. Four membered rings and vacancies are identified as the principal scattering centres. Revealing the connection between the properties of GBs and the CVD growth method may open new opportunities in the graphene based nanoelectronics.

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Electronic transport through ordered and disordered graphene grain boundaries

The evolution of electronic wave packets (WPs) through grain boundaries (GBs) of various structures in graphene was investigated by the numerical solution of the time-dependent Schroedinger equation. WPs were injected from a simulated STM tip placed above one of the grains. Electronic structure of the GBs was calculated by ab-initio and tight-binding methods. Two main factors governing the energy dependence of the transport have been identified: the misorientation angle of the two adjacent graphene grains and the atomic structure of the GB. In case of an ordered GB made of a periodic repetition of pentagon-heptagon pairs, it was found that the transport at high and low energies is mainly determined by the misorientation angle, but the transport around the Fermi energy is correlated with the electronic structure of the GB. A particular line defect with zero misorientation angle (Lahiri et al, Nat Nanotechnol 2010,5:326) behaves as a metallic nanowire and shows electron-hole asymmetry for hot electrons or holes. To generate disordered GBs, found experimentally in CVD graphene samples, a Monte-Carlo-like procedure has been developed. Results show a reduced transport for the disordered GBs, primarily attributed to electronic localized states caused by C atoms with only two covalent bonds.

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