arXiv subjects

L. Alff

Publications and source records attributed to L. Alff.

32 records · Page 2Linked to original sources

arXiv2003

Structural and doping effects in the half-metallic double perovskite $A_2$CrWO$_6$

he structural, transport, magnetic and optical properties of the double perovskite $A_2$CrWO$_6$ with $A=\text{Sr, Ba, Ca}$ have been studied. By varying the alkaline earth ion on the $A$ site, the influence of steric effects on the Curie temperature $T_C$ and the saturation magnetization has been determined. A maximum $T_C=458$ K was found for Sr$_2$CrWO$_6$ having an almost undistorted perovskite structure with a tolerance factor $f\simeq 1$. For Ca$_2$CrWO$_6$ and Ba$_2$CrWO$_6$ structural changes result in a strong reduction of $T_C$. Our study strongly suggests that for the double perovskites in general an optimum $T_C$ is achieved only for $f \simeq 1$, that is, for an undistorted perovskite structure. Electron doping in Sr$_2$CrWO$_6$ by a partial substitution of Sr$^{2+}$ by La$^{3+}$ was found to reduce both $T_C$ and the saturation magnetization $M_s$. The reduction of $M_s$ could be attributed both to band structure effects and the Cr/W antisites induced by doping. Band structure calculations for Sr$_2$CrWO$_6$ predict an energy gap in the spin-up band, but a finite density of states for the spin-down band. The predictions of the band structure calculation are consistent with our optical measurements. Our experimental results support the presence of a kinetic energy driven mechanism in $A_2$CrWO$_6$, where ferromagnetism is stabilized by a hybridization of states of the nonmagnetic W-site positioned in between the high spin Cr-sites.

cond-mat.str-el↗

arXiv2003

Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

Epitaxy of oxide materials on silicon (Si) substrates is of great interest for future functional devices using the large variety of physical properties of the oxides as ferroelectricity, ferromagnetism, or superconductivity. Recently, materials with high spin polarization of the charge carriers have become interesting for semiconductor-oxide hybrid devices in spin electronics. Here, we report on pulsed laser deposition of magnetite (Fe3O4) on Si(001) substrates cleaned by an in situ laser beam high temperature treatment. After depositing a double buffer layer of titanium nitride (TiN) and magnesium oxide (MgO), a high quality epitaxial magnetite layer can be grown as verified by RHEED intensity oscillations and high resolution x-ray diffraction.

cond-mat.mtrl-sci↗

arXiv2002

Epitaxial growth and transport properties of Sr$_2$CrWO$_6$ thin films

We report on the preparation and characterization of epitaxial thin films of the double-perovskite Sr$_2$CrWO$_6$ by Pulsed Laser Deposition (PLD). On substrates with low lattice mismatch like SrTiO$_3$, epitaxial Sr$_2$CrWO$_6$ films with high crystalline quality can be grown in a molecular layer-by-layer growth mode. Due to the similar ionic radii of Cr and W, these elements show no sublattice order. Nevertheless, the measured Curie temperature is well above 400 K. Due to the reducing growth atmosphere required for double perovskites, the SrTiO$_3$ substrate surface undergoes an insulator-metal transition impeding the separation of thin film and substrate electric transport properties.

cond-mat.str-el↗

arXiv2002

Low frequency 1/f noise in doped manganite grain-boundary junctions

We have performed a systematic analysis of the low frequency 1/f-noise in single grain boundary junctions in the colossal magnetoresistance material La_{2/3}Ca_{1/3}MnO_{3-delta}. The grain boundary junctions were formed in epitaxial La_{2/3}Ca_{1/3}MnO_{3-delta} films deposited on SrTiO_3 bicrystal substrates and show a large tunneling magnetoresistance of up to 300% at 4.2 K as well as ideal, rectangular shaped resistance versus applied magnetic field curves. Below the Curie temperature T_C the measured 1/f noise is dominated by the grain boundary. The dependence of the noise on bias current, temperature and applied magnetic field gives clear evidence that the large amount of low frequency noise is caused by localized sites with fluctuating magnetic moments in a heavily disordered grain boundary region. At 4.2 K additional temporally unstable Lorentzian components show up in the noise spectra that are most likely caused by fluctuating clusters of interacting magnetic moments. Noise due to fluctuating domains in the junction electrodes is found to play no significant role.

cond-mat.str-el↗

arXiv2002

Sub-unit cell layer-by-layer growth of Fe3O4, MgO, and Sr2RuO4 thin films

The use of oxide materials in oxide electronics requires their controlled epitaxial growth. Recently, it was shown that Reflection High Energy Electron Diffraction (RHEED) allows to monitor the growth of oxide thin films even at high oxygen pressure. Here, we report the sub-unit cell molecular or block layer growth of the oxide materials Sr2RuO4, MgO, and magnetite using Pulsed Laser Deposition (PLD) from stoichiometric targets. Whereas for perovskites such as SrTiO3 or doped LaMnO3 a single RHEED intensity oscillation is found to correspond to the growth of a single unit cell, in materials where the unit cell is composed of several molecular layers or blocks with identical stoichiometry, a sub-unit cell molecular or block layer growth is established resulting in several RHEED intensity oscillations during the growth of a single unit-cell.

cond-mat.mtrl-sci↗

arXiv2002

Transport anisotropy in biaxially strained La(2/3)Ca(1/3)MnO(3) thin films

Due to the complex interplay of magnetic, structural, electronic, and orbital degrees of freedom, biaxial strain is known to play an essential role in the doped manganites. For coherently strained La(2/3)Ca(1/3)MnO(3) thin films grown on SrTiO(3) substrates, we measured the magnetotransport properties both parallel and perpendicular to the substrate and found an anomaly of the electrical transport properties. Whereas metallic behavior is found within the plane of biaxial strain, for transport perpendicular to this plane an insulating behavior and non-linear current-voltage characteristics (IVCs) are observed. The most natural explanation of this anisotropy is a strain induced transition from an orbitally disordered ferromagnetic state to an orbitally ordered state associated with antiferromagnetic stacking of ferromagnetic manganese oxide planes.

cond-mat.str-el↗

arXiv2001

Possible pseudogap behavior of electron doped high-temperature superconductors

We have measured the low-energy quasiparticle excitation spectrum of the electron doped high-temperature superconductors (HTS) Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y) as a function of temperature and applied magnetic field using tunneling spectroscopy. At zero magnetic field, for these optimum doped samples no excitation gap is observed in the tunneling spectra above the transition temperature Tc. In contrast, below Tc for applied magnetic fields well above the resistively determined upper critical field, a clear excitation gap at the Fermi level is found which is comparable to the superconducting energy gap below Tc. Possible interpretations of this observation are the existence of a normal state pseudogap in the electron doped HTS or the existence of a spatially non-uniform superconducting state.

cond-mat.supr-con↗

arXiv2000

Transport and Noise Characteristics of Submicron High-Temperature Superconductor Grain-Boundary Junctions

We have investigated the transport and noise properties of submicron YBCO bicrystal grain-boundary junctions prepared using electron beam lithography. The junctions show an increased conductance for low voltages reminiscent of Josephson junctions having a barrier with high transmissivity. The voltage noise spectra are dominated by a few Lorentzian components. At low temperatures clear two-level random telegraph switching (RTS) signals are observable in the voltage vs time traces. We have investigated the temperature and voltage dependence of individual fluctuators both from statistical analysis of voltage vs time traces and from fits to noise spectra. A transition from tunneling to thermally activated behavior of individual fluctuators was clearly observed. The experimental results support the model of charge carrier traps in the barrier region.

cond-mat.supr-con↗

arXiv2000

Large two-level magnetoresistance effect in doped manganite grain boundary junctions

We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to the grain boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain boundary interface.

cond-mat.str-el↗

arXiv2000

Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR with increasing voltage scales with an increase of the inelastic tunneling current due to multi-step inelastic tunneling via localized defect states in the tunneling barrier. This behavior can be described within a three-current model for magnetic tunnel junctions that extends the two-current Julliere model by adding an inelastic, spin-independent tunneling contribution. Our analysis gives strong evidence that the observed drastic decrease of the GB-TMR in manganites is caused by an imperfect tunneling barrier.

cond-mat.str-el↗

arXiv1999

Anomalous Low Temperature Behavior of Superconducting Nd(1.85)Ce(0.15)CuO(4-y)

We have measured the temperature dependence of the in-plane London penetration depth lambda(T) and the maximum Josephson current Ic(T) using bicrystal grain boundary Josephson junctions of the electron-doped cuprate superconductor Nd(1.85)Ce(0.15)CuO(4-y). Both quantities reveal an anomalous temperature dependence below about 4 K. In contrast to the usual monotonous decrease (increase) of lambda(T) (Ic(T)) with decreasing temperature, lambda(T) and Ic(T) are found to increase and decrease, respectively, with decreasing temperature below 4 K resulting in a non-monotonous overall temperature dependence. This anomalous behavior was found to be absent in analogous measurements performed on Pr(1.85)Ce(0.15)CuO(4-y). From this we conclude that the anomalous behavior of Nd(1.85)Ce(0.15)CuO(4-y) is caused by the presence of the Nd3+ paramagnetic moments. Correcting the measured lambda(T) dependence of Nd(1.85)Ce(0.15)CuO(4-y) for the temperature dependent susceptibility due to the Nd moments, an exponential dependence is obtained indicating isotropic s-wave pairing. This result is fully consistent with the lambda(T) dependence measured for Pr(1.85)Ce(0.15)CuO(4-y).

cond-mat.supr-con↗

arXiv1998

Andreev Bound States in High Temperature Superconductors

Andreev bound states (ABS) at the surface of superconductors are expected for any pair potential showing a sign change in different k-directions with their spectral weight depending on the relative orientation of the surface and the pair potential. We report on the observation of ABS in HTS employing tunneling spectroscopy on bicrystal grain boundary Josephson junctions (GBJs). The tunneling spectra were studied as a function of temperature and applied magnetic field. The tunneling spectra of GBJ formed by YBCO, BSCCO, and LSCO show a pronounced zero bias conductance peak that can be interpreted in terms of Andreev bound states at zero energy that are expected at the surface of HTS having a d-wave symmetry of the order parameter. In contrast, for the most likely s-wave HTS NCCO no zero bias conductance peak was observed. Applying a magnetic field results in a shift of spectral weight from zero to finite energy. This shift is found to depend nonlinearly on the applied magnetic field. Further consequences of the Andreev bound states are discussed and experimental evidence for anomalous Meissner currents is presented.

cond-mat.supr-con↗

arXiv1998

Observation of Bound Surface States in Grain Boundary Junctions of High Temperature Superconductors

We have performed a detailed study of the tunneling spectra of bicrystal grain boundary junctions (GBJs) fabricated from the HTS YBCO, BSCCO, LSCO, and NCCO. In all experiments the tunneling direction was along the CuO planes. With the exception of NCCO, for all materials a pronounced zero bias conductance peak was observed which decreases with increasing temperature and disappears at the critical temperature. These results can be explained by the presence of a dominating d-wave symmetry of the order parameter resulting in the formation of zero energy Andreev bound states at surfaces and interfaces of HTS. The absence of a ZBCP for NCCO is consistent with a dominating s-wave symmetry of the pair potential in this material. The observed nonlinear shift of spectral weight to finite energies by applying a magnetic field is in qualitative agreement with recent theoretical predictions.

cond-mat.supr-con↗

arXiv1998

Superconducting NdCeCuO Bicrystal Grain Boundary Josephson Junctions

We have studied the electric transport properties of symmetrical [001] tilt NdCeCuO bicrystal grain boundary Josephson junctions (GBJs) fabricated on SrTiO bicrystal substrates with misorientation angles of 24 and 36.8 degree. The superconducting properties of the NdCeCuO-GBJs are similar to those of GBJs fabricated from the hole doped high temperature superconductors (HTS). The critical current density Jc decreases strongly with increasing misorientation angle. The products of the critical current Ic and the normal resistance Rn (about 0.1 mV at 4.2 K) are small compared to the gap voltage and fit well to the universal scaling law (IcRn is proportional to the square root of Jc) found for GBJs fabricated from the hole doped HTS. This suggests that the symmetry of the order parameter, which most likely is different for the electron and the hole doped HTS has little influence on the characteristic properties of symmetrical [001] tilt GBJs.

cond-mat.supr-con↗