arXiv subjects

L. Andricek

Publications and source records attributed to L. Andricek.

54 records · Page 3Linked to original sources

arXiv2020

Rediscovery of $B \to ϕK^{()}$ decays and measurement of the longitudinal polarization fraction $f_L$ in $B \to ϕK^{}$ decays using the Summer 2020 Belle II dataset

We utilize a sample of 34.6 fb$^{-1}$, collected by the Belle II experiment at the SuperKEKB asymmetric energy $e^+e^-$ collider, to search for the $B^+ \to ϕK^+$, $B^+ \to ϕK^{*+}$, $B^0 \to ϕK^0_S$, and $B^0 \to ϕK^{*0}$ decays. Charmless hadronic $B$ decays represent an important part of the Belle II physics program, and are an ideal benchmark to test the detector capabilities in terms of tracking efficiency, charged particle identification, vertexing, and advanced analysis techniques. Each channel is observed with a significance that exceeds 5 standard deviations, and we obtain measurements of their branching ratios that are in good agreement with the world averages. For the $B \to ϕK^*$ modes, we also perform a measurement of the longitudinal polarization fraction $f_L$.

hep-ex↗

arXiv2020

First flavor tagging calibration using 2019 Belle II data

We report on the first calibration of the standard Belle II $B$-flavor tagger using the full data set collected at the $Υ(4{\rm S})$ resonance in 2019 with the Belle II detector at the SuperKEKB collider, corresponding to 8.7 fb$^{-1}$ of integrated luminosity. The calibration is performed by reconstructing various hadronic charmed $B$-meson decays with flavor-specific final states. We use simulation to optimize our event selection criteria and to train the flavor tagging algorithm. We determine the tagging efficiency and the fraction of wrongly identified tag-side $B$~candidates from a measurement of the time-integrated $B^0-\overline{B}^0$ mixing probability. The total effective efficiency is measured to be $\varepsilon_{\rm eff} = \big(33.8 \pm 3.6(\text{stat}) \pm 1.6(\text{sys})\big)\%$, which is in good agreement with the predictions from simulation and comparable with the best one obtained by the Belle experiment. The results show a good understanding of the detector performance and offer a basis for future calibrations.

hep-ex↗

arXiv2020

Measurement of the branching fraction ${\cal B}(\bar B^0\to D^{*+}\ell^-\barν_\ell)$ with early Belle II data

We measure the branching fractions for the decays $\bar{B}^0 \to D^{*+} e^{-} \barν_e$ and $\bar{B}^0 \to D^{*+} μ^{-} \barν_μ$ using $8.70 \pm 0.09~{\rm fb}^{-1}$ of data collected by the Belle II experiment at the SuperKEKB asymmetric-energy $e^+ e^-$ collider. Candidate signal decays are reconstructed with the subsequent decays $D^{*+}\to D^0 π^+$ and $D^0\to K^-π^+$. We obtain the results ${\cal B}(\bar{B}^0 \to D^{*+} e^{-} \barν_e)$ = $(4.55\pm0.14(\mathrm{stat})\pm0.35 (\mathrm{syst})) \%$ and ${\cal B}(\bar{B}^0 \to D^{*+} μ^{-} \barν_μ)$ = $(4.84\pm 0.13(\mathrm{stat})\pm0.37(\mathrm{syst})) \%$, in agreement with the world averages. The measurements serve to validate the full chain of detector operation and calibration, data collection and processing, and production of physics results in the case of semileptonic $B$-meson decays.

hep-ex↗

arXiv2020

Charmless $B$ decay reconstruction in 2019 Belle II data

We report on the reconstruction of various charmless $B$ decays from electron-positron collisions at the energy corresponding to the $Υ(4S)$ resonance collected with the Belle II detector at the SuperKEKB collider. We use simulation to devise optimized event selections and apply them to the full data set collected in 2019, corresponding to 8.7\,fb$^{-1}$ of integrated luminosity. We fit the difference between half of the collision energy and the $B$ candidate energy (in the $Υ(4S)$ frame) for events restricted to a signal-rich range in beam-energy-constrained mass to search for charmless signals. Signal yields of approximately 80, 15, 20, 30, 90, and 160 decays are reconstructed for the channels $B^0 \to K^+π^-$, $B^0 \to π^+π^-$, $B^+ \to K^0_S(\to π^+π^-)π^+$, $B^+ \to K^+π^0(\to γγ)$, $B^+ \to K^+K^-K^+$, and $B^+ \to K^+π^-π^+$, respectively. Yields and background contaminations are compatible with those expected from simulation and comparable with those obtained by the Belle experiment. The results show a good understanding of the detector performance and offer a reliable basis to assess projections for future reach.

hep-ex↗

arXiv2020

Measurement of the $B^0$ lifetime using fully reconstructed hadronic decays in the 2019 Belle II dataset

This document presents the measurement of $B^0$ meson lifetimes using the 2019 Belle II dataset that corresponds to an integrated luminosity of $8.7 \pm 0.2$ fb$^{-1}$. Each candidate is fully reconstructed with hadronic decay final states on the signal side, while the rest-of-event technique allows to infer the decay vertex position on the other (tag) side. $B^0$ lifetime is extracted from an unbinned maximum likelihood fit to the distribution of the difference between the signal side $B^0$ candidate and the tag side decay times. The measured lifetime is $τ_{B^0} = 1.48 \pm 0.28 \pm 0.06 $ ps, where the first uncertainty is statistical and the second is systematic.

hep-ex↗

arXiv2019

Measurement of the integrated luminosity of the Phase 2 data of the Belle II experiment

From April to July 2018, a data sample at the peak energy of the $Υ(4S)$ resonance was collected with the Belle~II detector at the SuperKEKB electron-positron collider. This is the first data sample of the Belle~II experiment. Using Bhabha and digamma events, we measure the integrated luminosity of the data sample to be ($496.3 \pm 0.3 \pm 3.0$)~pb$^{-1}$, where the first uncertainty is statistical and the second is systematic. This work provides a basis for future luminosity measurements at Belle~II.

hep-ex↗

arXiv2016

Integrated cooling channels in position-sensitive silicon detectors

We present an approach to construct position-sensitive silicon detectors with an integrated cooling circuit. Tests on samples demonstrate that a very modest liquid flow very effectively cool the devices up to a power dissipation of over 10~W/cm$^2$. The liquid flow is found to have a negligible impact on the mechanical performance. A finite-element simulation predicts the cooling performance to an accuracy of approximately 10~\%.

physics.ins-det↗

arXiv2014

Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of $10^{16}$ $\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ (1 MeV neutrons).

physics.ins-det↗

arXiv2014

Heavily Irradiated N-in-p Thin Planar Pixel Sensors with and without Active Edges

We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrmμ$m, produced at MPP/HLL, and 100-200 $\mathrmμ$m thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. They are interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the n-in-p technology only requires a single side processing and thereby it is a cost-effective alternative to the n-in-n pixel technology presently employed in the LHC experiments. High precision beam test measurements of the hit efficiency have been performed on these devices both at the CERN SpS and at DESY, Hamburg. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained with 150 $\mathrmμ$m thin sensors, assembled with the new ATLAS FE-I4 chip and irradiated up to a fluence of 4$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$, show that they are excellent candidates for larger radii of the silicon pixel tracker in the upgrade of the ATLAS detector at HL-LHC. In addition, the active edge technology of the VTT devices maximizes the active area of the sensor and reduces the material budget to suit the requirements for the innermost layers. The edge pixel performance of VTT modules has been investigated at beam test experiments and the analysis after irradiation up to a fluence of 5$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ has been performed using radioactive sources in the laboratory.

physics.ins-det↗

arXiv2013

Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

We present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 $μ$m thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of $5\times 10^{15}$ \neqcm. We will also report on the R&D activity to obtain Inter Chip Vias (ICVs) on the ATLAS read-out chip in collaboration with the Fraunhofer Institute EMFT. This step is meant to prove the feasibility of the signal transport to the newly created readout pads on the backside of the chips allowing for four side buttable devices without the presently used cantilever for wire bonding. The read-out chips with ICVs will be interconnected to thin pixel sensors, 75 $μ$m and 150 $μ$m thick, with the Solid Liquid Interdiffusion (SLID) technology, which is an alternative to the standard solder bump-bonding.

physics.ins-det↗

arXiv2012

DEPFET active pixel detectors for a future linear $e^+e^-$ collider

The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\mathrm{\mathbf{μm}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\mathbf{e^+ e^-}$ collider.

physics.ins-det↗

arXiv2012

Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC

The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75 um or 150 um, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100 um thick sensors with active edges, fabricated at VTT, Finland. Hit efficiencies are derived from beam test data for thin devices irradiated up to a fluence of 4e15 neq/cm^2. For the active edge devices, the charge collection properties of the edge pixels before irradiation is discussed in detail, with respect to the inner ones, using measurements with radioactive sources. Beyond the active edge sensors, an additional ingredient needed to design four side buttable modules is the possibility of moving the wire bonding area from the chip surface facing the sensor to the backside, avoiding the implementation of the cantilever extruding beyond the sensor area. The feasibility of this process is under investigation with the FE-I3 SLID modules, where Inter Chip Vias are etched, employing an EMFT technology, with a cross section of 3 um x 10 um, at the positions of the original wire bonding pads.

physics.ins-det↗

arXiv2012

SLID-ICV Vertical Integration Technology for the ATLAS Pixel Upgrades

We present the results of the characterization of pixel modules composed of 75 um thick n-in-p sensors and ATLAS FE-I3 chips, interconnected with the SLID (Solid Liquid Inter-Diffusion) technology. This technique, developed at Fraunhofer-EMFT, is explored as an alternative to the bump-bonding process. These modules have been designed to demonstrate the feasibility of a very compact detector to be employed in the future ATLAS pixel upgrades, making use of vertical integration technologies. This module concept also envisages Inter-Chip-Vias (ICV) to extract the signals from the backside of the chips, thereby achieving a higher fraction of active area with respect to the present pixel module design. In the case of the demonstrator module, ICVs are etched over the original wire bonding pads of the FE-I3 chip. In the modules with ICVs the FE-I3 chips will be thinned down to 50 um. The status of the ICV preparation is presented.

physics.ins-det↗

arXiv2011

Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2$\cdot 10^{15}$\,n$_{\mathrm{eq}}$/cm$^2$

A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to $2\cdot10^{15}$\,\neqcm{} are discussed. Additionally, the etching of ICV into the front-end wafers was started. ICVs will be used to route the signals vertically through the front-end chip, to newly created pads on the backside. In the EMFT approach the chip wafer is thinned to (50--60)\,$μ$m.

physics.ins-det↗

arXiv2010

Belle II Technical Design Report

The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.

physics.ins-det↗

arXiv2010

The Belle-II Pixel Vertex Detector at the SuperKEKB Flavor Factory

An upgraded asymmetric e+e- flavor factory, SuperKEKB, is planned at KEK. It will deliver a luminosity of 8 x 10^35 cm^-2 s^-1, allowing precision measurements in the flavor sector which can probe new physics well beyond the scales accessible to direct observation. The increased luminosity also requires upgrades of the Belle detector. Of critical importance here is a new silicon pixel vertex tracker, which will significantly improve the decay vertex resolution. This new detector will consist of two detector layers close to the interaction point, using DEPFET pixel sensors with 50 um thick silicon in the active area.

physics.ins-det↗

arXiv2006

Status of a DEPFET pixel system for the ILC vertex detector

We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micron and a row wise read out with line rates of 20MHz and more. The targeted noise performance for the DEPFET technology is in the range of ENC=100 e-. The functionality of the system has been demonstrated using different radioactive sources in an energy range from 6 to 40keV. In recent test beam experiments using 6GeV electrons, a signal-to-noise ratio of S/N~120 has been achieved with present sensors being 450 micron thick. For improved DEPFET systems using 50 micron thin sensors in future, a signal-to-noise of 40 is expected.

physics.ins-det↗

arXiv2003

New Results on DEPFET Pixel Detectors for Radiation Imaging and High Energy Particle Detection

DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full DEPFET pixel matrices have been built and operated for autoradiographical imaging with imaging resolutions of 4.3 +- 0.8 um at 22 keV. For applications in low energy X-ray astronomy the high energy resolution of DEPFET detectors is attractive. For particle physics, DEPFET pixels are interesting as low material detectors with high spatial resolution. For a Linear Collider detector the readout must be very fast. New readout chips have been designed and produced for the development of a DEPFET module for a pixel detector at the proposed TESLA collider (520x4000 pixels) with 50 MHz line rate and 25 kHz frame rate. The circuitry contains current memory cells and current hit scanners for fast pedestal subtraction and sparsified readout. The imaging performance of DEPFET devices as well as present achievements towards a DEPFET vertex detector for a Linear Collider are presented.

physics.ins-det↗