arXiv subjects

L. Antonio Benítez

Publications and source records attributed to L. Antonio Benítez.

3 recordsLinked to original sources

arXiv2026

Family of High-Chern-Number Orbital Magnets in Twisted Rhombohedral Graphene

Realizing Chern insulators with Chern numbers greater than one remains a major goal in quantum materials research. Such platforms promise multichannel dissipationless chiral transport and access to correlated phases beyond the conventional C = 1 paradigm. Here, we discover a family of high-Chern-number orbital magnets in twisted monolayer-multilayer rhombohedral graphene, denoted (1+n) with n = 3, 4, and 5. Magnetotransport measurements show pronounced anomalous Hall effects at one and three electrons per moiré unit cell when they are polarized away from the moiré interface. Across the (1+n) systems, we observe a clear topological hierarchy C = n, revealed by the Středa trajectories and the quantized Hall resistance. Our experimental observations are supported by self-consistent mean-field calculations. Moreover, we realize both electrical and magnetic switching of the high-Chern-number states by flipping the valley polarization. Together, these results establish a tunable hierarchy of orbital Chern magnets in twisted rhombohedral graphene, offering systematic control of Chern number and topology through layer engineering in pristine graphene moiré systems.

cond-mat.mes-hall↗

arXiv2022

Low-symmetry topological materials for large charge-to-spin interconversion: The case of transition metal dichalcogenide monolayers

The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments on few-layer ${\rm MoTe}_2$ and ${\rm WTe}_2$ showed that the reduced symmetry of these strong spin-orbit coupling materials enables a new form of {\it canted} spin Hall effect, characterized by concurrent in-plane and out-of-plane spin polarizations. Here, through quantum transport calculations on realistic device geometries, including disorder, we predict a very large gate-tunable SHE figure of merit $λ_sθ_{xy}\sim 1\text{--}50$ nm in ${\rm MoTe}_2$ and ${\rm WTe}_2$ monolayers that significantly exceeds values of conventional SHE materials. This stems from a concurrent long spin diffusion length ($λ_s$) and charge-to-spin interconversion efficiency as large as $θ_{xy} \approx 80$\%, originating from momentum-invariant (persistent) spin textures together with large spin Berry curvature along the Fermi contour, respectively. Generalization to other materials and specific guidelines for unambiguous experimental confirmation are proposed, paving the way towards exploiting such phenomena in spintronic devices. These findings vividly emphasize how crystal symmetry and electronic topology can govern the intrinsic SHE and spin relaxation, and how they may be exploited to broaden the range and efficiency of spintronic materials and functionalities.

cond-mat.mes-hall↗

arXiv2019

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession experiments in properly designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion effiencies can be tailored by electrostatic gating in magnitude and sign, peaking nearby the charge neutrality point with a magnitude that is comparable to the largest efficiencies reported to date. Such an unprecedented electric-field tunability provides a new building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies.

cond-mat.mes-hall↗