arXiv subjects

L. C. L. Hollenberg

Publications and source records attributed to L. C. L. Hollenberg.

81 records · Page 5Linked to original sources

arXiv2004

Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture

We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and the hyperfine interaction - both crucial components for qubit operations in the Kane quantum computer. These calculations were performed using an anisotropic effective-mass Hamiltonian approach. The behaviour of the donor exchange coupling as a function of the device parameters varied provides relevant information for the experimental design of these devices.

cond-mat.mtrl-sci↗

arXiv2003

Charge-based quantum computing using single donors in semiconductors

Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor crystal, one of which is singly ionised. Surface electrodes control the qubit and a radio-frequency single electron transistor provides fast readout. The calculated single gate times, of order 50ps or less, are much shorter than the expected decoherence time. We propose universal one- and two-qubit gate operations for this system and discuss prospects for fabrication and scale up.

cond-mat↗

arXiv2003

Charge-based silicon quantum computer architectures using controlled single-ion implantation

We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart, one of which is singly ionized. The lowest two energy states of the remaining electron form the logical states. Surface electrodes control the qubit using voltage pulses and dual single electron transistors operating near the quantum limit provide fast readout with spurious signal rejection. A low energy (keV) ion beam is used to implant the phosphorus atoms in high-purity Si. Single atom control during the implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure, while positional accuracy is provided by a nanomachined resist mask. We describe a construction process for implanted single atom and atom cluster devices with all components registered to better than 20 nm, together with electrical characterisation of the readout circuitry. We also discuss universal one- and two-qubit gate operations for this architecture, providing a possible path towards quantum computing in silicon.

cond-mat↗

arXiv2003

Electron Exchange Coupling for Single Donor Solid-State Qubits

Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same effects lead to an extreme sensitivity of the exchange energy on the relative orientation of the donor atoms, an issue of crucial importance in the construction silicon-based spin quantum computers. In this article we calculate the donor electron exchange coupling as a function of donor position incorporating the full Bloch structure of the Kohn-Luttinger electron wavefunctions. It is found that due to the rapidly oscillating nature of the terms they produce, the periodic part of the Bloch functions can be safely ignored in the Heitler-London integrals as was done by Koiller et. al. [Phys. Rev. Lett. 88,027903(2002),Phys. Rev. B. 66,115201(2002)], significantly reducing the complexity of calculations. We address issues of fabrication and calculate the expected exchange coupling between neighbouring donors that have been implanted into the silicon substrate using an 15keV ion beam in the so-called 'top down' fabrication scheme for a Kane solid-state quantum computer. In addition we calculate the exchange coupling as a function of the voltage bias on control gates used to manipulate the electron wavefunctions and implement quantum logic operations in the Kane proposal, and find that these gate biases can be used to both increase and decrease the magnitude of the exchange coupling between neighbouring donor electrons. The zero-bias results reconfirm those previously obtained by Koiller.

cond-mat↗

arXiv2003

Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces

In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these variables affect the electron density of the donor electron. In particular, we calculate the resonance frequency of the donor nuclei as a function of these parameters. To do this we calculated the donor electron wave function variationally using an effective mass Hamiltonian approach, using a basis of deformed hydrogenic orbitals. This approach was then extended to include the electric field Hamiltonian and the silicon host geometry. We found that the phosphorous donor electron was very sensitive to all the experimental variables studied in our work, and thus to optimise the operation of these devices it is necessary to control all parameters varied in this paper.

cond-mat↗

arXiv2001

Improved Hamiltonian Lattice Gauge Theory

We derive an improved lattice Hamiltonian for pure gauge theory, coupling arbitrarily distant links in the kinetic term. The level of improvement achieved is examined in variational calculations of the SU(2) specific heat in 2+1 dimensions.

hep-lat↗

arXiv2001

A Non-Adiabatic Controlled Not Gate for the Kane Solid State Quantum Computer

The method of iterated resolvents is used to obtain an effective Hamiltonian for neighbouring qubits in the Kane solid state quantum computer. In contrast to the adiabatic gate processes inherent in the Kane proposal we show that free evolution of the qubit-qubit system, as generated by this effective Hamiltonian, combined with single qubit operations, is sufficient to produce a controlled-NOT (c-NOT) gate. Thus the usual set of universal gates can be obtained on the Kane quantum computer without the need for adiabatic switching of the controllable parameters as prescribed by Kane. Both the fidelity and gate time of this non-adiabatic c-NOT gate are determined by numerical simulation.

quant-ph↗

arXiv2001

Stochastic Noise as a Source of Decoherence in a Solid State Quantum Computer

We examine a stochastic noise process that has a decohering effect on the average evolution of qubits in the quantum register of the solid state quantum computer proposed by Kane. We consider the effects of this process on the single qubit operations necessary to perform quantum logical gates and derive an expression for the fidelity of these gates in this system. We then calculate an upper bound on the level of this stochastic noise tolerable in a workable quantum computer.

quant-ph↗

arXiv1997

2D XXZ Model ground state Properties using an analytic Lanczos Expansion

We develop the formalism for calculating arbitrary expectation values for any extensive lattice Hamiltonian system using a new analytic Lanczos expansion, or plaquette expansion, and a recently proved exact theorem for ground state energies. The ground state energy, staggered magnetisation and the excited state gap of the 2D anisotropic antiferromagnetic Heisenberg Model are then calculated using this expansion for a range of anisotropy parameters and compared to other moment based techniques, such as the "t"-expansion, and spin-wave theory and series expansion methods. We find that far from the isotropic point all moment methods give essentially very similar results, but near the isotropic point the plaquette expansion is generally better than the others.

cond-mat.stat-mech↗