arXiv subjects

L. D. Buda-Prejbeanu

Publications and source records attributed to L. D. Buda-Prejbeanu.

At least 19 recordsLinked to original sources

arXiv2025

Single-laser pulse toggle switching in CoHo and CoDy single layer alloys : when domain wall motion matters

Single pulse All Optical Helicity-Independent Toggle Switching is observed in CoHo and CoDy alloys single layers. An original reversal mechanism is reported which contrasts with those observed to date. It is shown that the reversal process is on the μs timescale involving the reorganization / coalescence of domains and domain walls. The toggle switching is explained considering the unbalanced magnetization distribution stabilized after the ultrashort laser pulse.

cond-mat.mtrl-sci↗

arXiv2024

Spin-torque nano-oscillator based on two in-plane magnetized synthetic ferrimagnets

We report the dynamic characterization of the spin-torque-driven in-plane precession modes of a spin-torque nano-oscillator based on two different synthetic ferrimagnets: a pinned one characterized by a strong RKKY interaction which is exchange coupled to an antiferromagnetic layer; and a second one, non-pinned characterized by weak RKKY coupling. The microwave properties associated with the steady-state precession of both SyFs are characterized by high spectral purity and power spectral density. However, frequency dispersion diagrams of the damped and spin transfer torque modes reveal drastically different dynamical behavior and microwave emission properties in both SyFs. In particular, the weak coupling between the magnetic layers of the non-pinned SyF raises discontinuous dispersion diagrams suggesting a strong influence of mode crossing. An interpretation of the different dynamical features observed in the damped and spin torque modes of both SyF systems was obtained by solving simultaneously, in a macrospin approach, a linearized version of the Landau-Lifshitz-Gilbert equation including the spin transfer torque term.

cond-mat.mes-hall↗

arXiv2023

Dipolar coupled core-shell perpendicular shape anisotropy MTJ with enhanced write speed and reduced cross-talk

The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a thicker storage layer with a vertical aspect ratio, enhancing the thermal stability factor thanks to the favorable contribution of the shape anisotropy. However, the increased aspect ratio comes with an increase in switching time under applied voltage and the cross-over to non-uniform reversal mechanism at higher aspect ratio, limiting the gain in scalability. Additionally, the larger volume of the magnetic cell significantly increases the stray field acting on the neighboring devices compared to thin MTJs. In this work, we propose the use of a dipolar-coupled core-shell system as a storage layer. This improves both bottlenecks, as predicted by micromagnetic simulations for magnetisation reversal, and a macrospin model to estimate the stray field in a dense array.

cond-mat.mes-hall↗

arXiv2023

Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions

Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in a perpendicular magnetic tunnel junction. The nanofabricated magnetic tunnel junction devices have an optimized bottom reference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to 74\% after patterning down to sub-100nm lateral dimensions. Experiments on continuous films reveal peculiar reversal patterns of concentric rings with opposite magnetic directions, above certain threshold fluence. These rings have been correlated to patterned device switching probability as a function of the applied laser fluence. Moreover, the magnetization reversal is independent on the duration of the laser pulse. According to our macrospin model, the underlying magnetization reversal mechanism can be attributed to an in-plane reorientation of the magnetization due to a fast reduction of the out-of-plane uniaxial anisotropy. These aspects are of great interest both for the physical understanding of the switching phenomenon and their consequences for all-optical-switching memory devices, since they allow for a large fluence operation window with high resilience to pulse length variability.

physics.app-ph↗

arXiv2022

In plane reorientation induced single laser pulse magnetization reversal in rare-earth based multilayer

Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of any applied field. Since the first switching experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has been restricted for a while to Gd-based alloys or Gd/FM bilayers where FM is a ferromagnetic layer. Only recently has AO-HIS been extended to a few other materials: MnRuGa ferrimagnetic Heusler alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse AO-HIS observed in Tb/Co results from a different mechanism than the one for Gd based samples and that it can be obtained for a large range of rare earth-transition metal (RE-TM) multilayers, making this phenomenon much more general. Surprisingly, in this large family of (RE-TM) multilayer systems, the threshold fluence for switching is observed to be independent of the pulse duration, up to at least 12 ps. Moreover, at high laser intensities, concentric ring domain structures are induced, unveiling multiple fluence thresholds. These striking switching features, which are in contrast to those of AO-HIS in GdFeCo alloys, concomitant with the demonstration of an in-plane reorientation of the magnetization, point towards an intrinsic precessional reversal mechanism. Our results allow expanding the variety of materials with tunable magnetic properties that can be integrated in complex heterostructures and provide a pathway to engineer materials for future applications based on all-optical control of magnetic order.

cond-mat.mtrl-sci↗

arXiv2022

Bifurcation analysis of strongly nonlinear injection locked spin torque oscillators

We investigate the dynamics of an injection locked in-plane uniform spin torque oscillator for several forcing configurations at large driving amplitudes. For the analysis, the spin wave amplitude equation is used to reduce the dynamics to a general oscillator equation in which the forcing is a complex valued function $F(p,ψ)\proptoε_1 (p)cos(ψ)+iε_2 (p)sin(ψ)$. Assuming that the oscillator is strongly nonisochronous and/or forced by a power forcing $(|νε_1/ε_2 |\gg 1)$, we show that the parameters $ε_{1,2} (p)$ govern the main bifurcation features of the Arnold tongue diagram : (i) the locking range asymmetry is mainly controlled by $dε_1 (p)/dp$, (ii) the Taken-Bogdanov bifurcation occurs for a power threshold depending on $ε_{1,2} (p)$ and (iii) the frequency hysteretic range is related to the transient regime through the resonant frequency at zero mismatch frequency. Then, the model is compared with the macrospin simulation for driving amplitudes as large as $10^0-10^3 A/m$ for the magnetic field and $10^{10}-10^{12} A/m^2$ for the current density. As predicted by the model, the forcing configuration (nature of the driving signal, applied direction, the harmonic orders) affects substantially the oscillator dynamic. However, some discrepancies are observed. In particular, the prediction of the frequency and power locking range boundaries may be misestimated if the hysteretic boundaries are of same magnitude order. Moreover, the misestimation can be of two different types according if the bifurcation is Saddle node or Taken Bogdanov. These effects are a further manifestation of the complexity of the dynamics in nonisochronous auto-oscillators.

nlin.CD↗

arXiv2021

Mutual Synchronization of Spin-Torque Oscillators within a Ring Array

An array of spin torque nano-oscillators (STNOs), coupled by dipolar interaction and arranged on a ring, has been studied numerically and analytically. The phase patterns and locking ranges are extracted as a function of the number $N$, their separation, and the current density mismatch between selected subgroups of STNOs. If $N\geq 6$ for identical current densities through all STNOs, two degenerated modes are identified an in-phase mode (all STNOs have the same phase) and an out-of-phase mode (the phase makes a 2$π$ turn along the ring). When inducing a current density mismatch between two subgroups, additional phase shifts occur. The locking range (maximum current density mismatch) of the in-phase mode is larger than the one for the out-of-phase mode and depends on the number $N$ of STNOs on the ring as well as on the separation. These results can be used for the development of magnetic devices that are based on STNO arrays.

cond-mat.soft↗

arXiv2021

Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions

The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $Δ$. Although the larger storage layer thickness improves $Δ$, it is expected to negatively impact the writing current and switching time. Hence, optimization of the cell dimensions (diameter, thickness) is of utmost importance for attaining a sufficiently high $Δ$ while keeping a moderate writing current. Micromagnetic simulations were carried out for different pillar thicknesses of fixed lateral size 20 nm. The switching time and the reversal mechanism were analysed as a function of the applied voltage and aspect-ratio (AR) of the storage layer. For AR $<$ 1, the magnetization reversal resembles a macrospin-like mechanism, while for AR $>$ 1 a non-coherent reversal is observed, characterized by the nucleation of a transverse domain wall at the ferromagnet/insulator interface which then propagates along the vertical axis of the pillar. It was further observed that the inverse of the switching time is linearly dependent on the applied voltage. This study was extended to sub-20 nm width with a value of $Δ$ around 80. It was observed that the voltage necessary to reverse the magnetic layer increases as the lateral size is reduced, accompanied with a transition from macrospin-reversal to a buckling-like reversal at high aspect-ratios.

cond-mat.mes-hall↗

arXiv2020

Room temperature skyrmions at zero field in exchange-biased ultrathin films

We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging is performed both with magnetic force microscopy and scanning Nitrogen-Vacancy magnetometry, the latter providing unambiguous measurements at zero external magnetic field. In such samples, we show that exchange bias provides an immunity of the skyrmion spin texture to moderate external magnetic field, in the tens of mT range, which is an important feature for applications as memory devices. These results establish exchange-biased multilayer stacks as a promising platform towards the effective realization of memory and logic devices based on magnetic skyrmions.

cond-mat.mtrl-sci↗

arXiv2017

Frequency shift keying by current modulation in a MTJ-based STNO with high data rate

Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable candidates for applications in wireless communications, where cost-effective and CMOS-compatible standalone devices are required. In this work, we study the ability of a magnetic-tunnel-junction (MTJ) based spin torque nano-oscillator to respond to a binary input sequence encoded in a square-shaped current pulse for its application as a frequency-shift-keying (FSK) based emitter. We demonstrate that below the limit imposed by the spin torque nano-oscillators intrinsic relaxation frequency, an agile variation between discrete oscillator states is possible. For this kind of devices, we demonstrate FSK up to data rates of 400 Mbps which is well suited for the application of such scillators in wireless networks.

physics.app-ph↗

arXiv2017

Injection locking at 2f of spin torque oscillators under influence of thermal noise

Experiments, numerical simulations and an analytic model were developed to elucidate the effects of noise in the synchronized state of a tunnel junction based spin torque nano oscillator (STNO). It is demonstrated that in the in plane magnetized structure, while the frequency is locked, much higher reference currents are needed to reduce the noise by phase locking. Our analysis shows that it is possible to control the phase noise by the reference microwave current (IRF) and that it can be further reduced by increasing the bias current (IDC) of the oscillator, keeping the reference current in feasible limits for applications.

physics.app-ph↗

arXiv2017

Influence of interlayer coupling on the spin torque driven excitations in a spin torque oscillator

The influence of dynamic interlayer interactions on the spin torque driven and damped excitations are illustrated for a three layer macrospin model system that corresponds to a standard spin-torque oscillator. The free layer and a synthetic antiferromagnetic (SyF) pinned layer of the spin-torque oscillator are in-plane magnetized. In order to understand experimental results, numerical simulations have been performed considering three types of interlayer interactions: exchange interaction between the two magnetic layers of the SyF, mutual spin torque between the top layer of the SyF and the free layer and dipolar interaction between all three magnetic layers. It will be shown that the dynamic dipolar coupling plays a predominant role. First, it leads to a hybridization of the free layer and the SyF linear modes and through this gives rise to a strong field dependence of the critical current. In particular, there is a field range of enhanced damping in which much higher current is required to drive the modes into steady state. This results in a gap in the excitation spectrum. Second, the dynamic dipolar interaction is also responsible for the non-linear interaction between the current driven steady state mode and the damped modes of the system. Here one can distinguish: (i) a resonant interaction that leads to a kink in the frequency-field and frequency-current dispersions accompanied by a small hysteresis and a reduction of the linewidth of the steady state mode and (ii) a non-resonant interaction that leads to a strong frequency redshift of the damped mode. The results underline the strong impact of interlayer coupling on the excitation spectra of spin-torque oscillators and illustrate in a simple three mode model system how in the non-linear regime the steady state and damped modes influence each other.

cond-mat.mes-hall↗

arXiv2016

Spin torque driven dynamics of a coupled two layer structure: interplay between conservative and dissipative coupling

In this manuscript the general concepts of spin wave theory are adapted to the dynamics of a self-polarized system based on two layers coupled via interlayer exchange (conservative coupling) and mutual spin torque (dissipative coupling). An analytical description of the non-linear dynamics is proposed and validated through numerical simulations. In contrast to the single layer model, the phase equation of the coupled system has a contribution coming from the dissipative part of the LLGS equation. It is shown that this is a major contribution to the frequency mandatory to describe well the most basic features of the dynamics of coupled systems. Using the proposed model a specific feature of coupled dynamics is addressed: the redshift to blueshift transition observed in the frequency current dependence of this kind of exchange coupled systems upon increasing the applied field. It is found that the blueshift regime can only occur in a region of field where the two linear eigenmodes contribute equally to the steady state mode (i.e. high mode hybridization). Finally, a general perturbed Hamiltonian equation for the coupled system is proposed.

cond-mat.mtrl-sci↗

arXiv2015

Spin-orbit torque driven chiral magnetization reversal in ultrathin nanostructures

We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the applied in-plane magnetic field followed by domain wall propagation. Our micromagnetic simulations show that the DC switching current can be defined as the edge nucleation current, which decreases strongly with increasing amplitude of the DMI. This description allows us to build a simple analytical model to quantitatively predict the switching current. We find that domain nucleation occurs down to a lateral size of 15 nm, defined by the length-scale of the DMI, beyond which the reversal mechanism approaches a macrospin behavior. The switching is deterministic and bipolar.

cond-mat.mtrl-sci↗

arXiv2015

Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions

The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz (LL) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque influences the precession frequency but it does not contribute significantly to the STT switching process (in particular to the switching time and switching current density), which is mostly determined by the in-plane STT contribution. This conclusion is confirmed by finite temperature and finite writing pulse macrospin simulations of the current-field switching diagrams. It contrasts with the case of STT-switching in in-plane magnetized MTJ in which the field-like term also influences the switching critical current. This theoretical analysis was successfully applied to the interpretation of voltage-field STT switching diagrams experimentally measured on perpendicular MTJ pillars 36 nm in diameter, which exhibit macrospin-like behavior. The physical nonequivalence of Landau and Gilbert dissipation terms in presence of STT-induced dynamics is also discussed.

cond-mat.mes-hall↗

arXiv2014

Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio

We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect ratio. For low aspect ratios, a precessional motion of the magnetization was observed and the effect of temperature on the precession coherence was studied. For high aspect ratios, we observed magnetization reversals in less than 1 ns for high enough current densities, the final state being controlled by the current direction in the magnetic tunnel junction cell.

cond-mat.mes-hall↗

arXiv2013

Current induced domain wall dynamics in the presence of spin orbit torques

Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the associated DW velocity depend on the relative values of the field like torque (FLT) and the Slonczewski like torques (SLT). The results are well explained by a collective coordinate model which is used to draw a phase diagram of the DW dynamics as a function of the FLT and the SLT. We show that a large increase in the DW velocity can be reached by a proper tuning of both torques.

cond-mat.mtrl-sci↗

arXiv2013

Domain wall tilting in the presence of the Dzyaloshinskii-Moriya interaction in out-of-plane magnetized magnetic nanotracks

We show that the Dzyaloshinskii-Moriya interaction (DMI) can lead to a tilting of the domain wall (DW) surface in perpendicularly magnetized magnetic nanotracks when DW dynamics is driven by an easy axis magnetic field or a spin polarized current. The DW tilting affects the DW dynamics for large DMI and the tilting relaxation time can be very large as it scales with the square of the track width. The results are well explained by an analytical model based on a Lagrangian approach where the DMI and the DW tilting are included. We propose a simple way to estimate the DMI in a magnetic multilayers by measuring the dependence of the DW tilt angle on a transverse static magnetic field. Our results shed light on the current induced DW tilting observed recently in Co/Ni multilayers with inversion asymmetry, and further support the presence of DMI in these systems.

cond-mat.mtrl-sci↗