arXiv subjects

L. D. Varma Sangani

Publications and source records attributed to L. D. Varma Sangani.

9 recordsLinked to original sources

arXiv2025

Modulation of quantum geometry and its coupling to pseudo-electric field by dynamic strain

Two-dimensional materials are a fertile ground for exploring quantum geometric phenomena, with Berry curvature and its first moment, the Berry curvature dipole, playing a central role in their electronic response. These geometric properties influence electronic transport and result in the anomalous and nonlinear Hall effects, and are typically controlled using static electric fields or strain. However, the possibility of modulating quantum geometric quantities in real-time remains unexplored. Here, we demonstrate the dynamic modulation of Berry curvature and its moments, as well as the generation of a pseudo-electric field using time-dependent strain. By placing heterostructures on a membrane, we introduce oscillatory strain together with an in-plane AC electric field and measure Hall signals that are modulated at linear combinations of the frequencies of strain and electric field. Our measurements reveal modulation of Berry curvature and its first moment. Notably, we provide direct experimental evidence of pseudo-electric field that results in an unusual dynamic strain-induced Hall response. This approach opens up a new pathway for controlling quantum geometry on demand, moving beyond conventional static perturbations. The pseudo-electric field provides a framework for external electric field-free anomalous Hall response and opens new avenues for probing the topological properties.

cond-mat.mes-hall↗

arXiv2024

Superconducting magic-angle twisted trilayer graphene hosts competing magnetic order and moiré inhomogeneities

The microscopic mechanism of superconductivity in the magic-angle twisted graphene family, including magic-angle twisted trilayer graphene (MATTG), is poorly understood. Properties of MATTG, like Pauli limit violation, suggest unconventional superconductivity. Theoretical studies propose proximal magnetic states in the phase diagram, but direct experimental evidence is lacking. We show direct evidence for an in-plane magnetic order proximal to the superconducting state using two complementary electrical transport measurements. First, we probe the superconducting phase by using statistically significant switching events from superconducting to the dissipative state of MATTG. The system behaves like a network of Josephson junctions due to lattice relaxation-induced moiré inhomogeneity in the system. We observe non-monotonic and hysteretic responses in the switching distributions as a function of temperature and in-plane magnetic field. Second, in normal regions doped slightly away from the superconducting regime, we observe hysteresis in magnetoresistance with an in-plane magnetic field; showing evidence for in-plane magnetic order that vanishes $\sim$900 mK. Additionally, we show a broadened Berezinskii-Kosterlitz-Thouless transition due to relaxation-induced moiré inhomogeneity. We find superfluid stiffness $J_{\mathrm{s}}$$\sim$0.15 K with strong temperature dependence. Theoretically, the magnetic and superconducting order arising from the magnetic order's fluctuations have been proposed - we show direct evidence for both. Our observation that the hysteretic magnetoresistance is sensitive to the in-plane field may constrain possible intervalley-coherent magnetic orders and the resulting superconductivity that arises from its fluctuations.

cond-mat.mes-hall↗

arXiv2022

Perpendicular electric field drives Chern transitions and layer polarization changes in Hofstadter bands

Moiré superlattices engineer band properties and enable observation of fractal energy spectra of Hofstadter butterfly. Recently, correlated-electron physics hosted by flat bands in small-angle moiré systems has been at the foreground. However, the implications of moiré band topology within the single-particle framework are little explored experimentally. An outstanding problem is understanding the effect of band topology on Hofstadter physics, which does not require electron correlations. Our work experimentally studies Chern state switching in the Hofstadter regime using twisted double bilayer graphene (TDBG), which offers electric field tunable topological bands, unlike twisted bilayer graphene. Here we show that the nontrivial topology reflects in the Hofstadter spectra, in particular, by displaying a cascade of Hofstadter gaps that switch their Chern numbers sequentially while varying the perpendicular electric field. Our experiments together with theoretical calculations suggest a crucial role of charge polarization changing concomitantly with topological transitions in this system. Layer polarization is likely to play an important role in the topological states in few-layer twisted systems. Moreover, our work establishes TDBG as a novel Hofstadter platform with nontrivial magnetoelectric coupling.

cond-mat.mes-hall↗

arXiv2022

Dynamics of an interfacial bubble controls adhesion mechanics in a van der Waals heterostructure

2D van der Waals heterostructures (vdWH) can result in novel functionality that crucially depends on interfacial structure and disorder. Bubbles at the vdWH interface can modify the interfacial structure. We probe the dynamics of a bubble at the interface of a graphene-hBN vdWH by using it as the drumhead of a NEMS device because nanomechanical devices are exquisite sensors. For drums with different interfacial bubbles, we measure the evolution of the resonant frequency and spatial mode shape as a function of electrostatic pulling. We show that the hysteretic detachment of layers of vdWH is triggered by the growth of large bubbles. The bubble growth takes place due to the concentration of stress resembling the initiation of fracture. The small bubbles at the heterostructure interface do not result in delamination as they are smaller than a critical fracture length. We provide insight into frictional dynamics and interfacial fracture of vdWH.

cond-mat.mes-hall↗

arXiv2022

Berry curvature dipole senses topological transition in a moiré superlattice

Topological aspects of electron wavefunction play a crucial role in determining the physical properties of materials. Berry curvature and Chern number are used to define the topological structure of electronic bands. While Berry curvature and its effects in materials have been studied, detecting changes in the topological invariant, Chern number, is challenging. In this regard, twisted double bilayer graphene (TDBG) has emerged as a promising platform to gain electrical control over the Berry curvature hotspots and the valley Chern numbers of its flat bands. In addition, strain induced breaking of the three-fold rotation (C3) symmetry in TDBG, leads to a non-zero first moment of Berry curvature called the Berry curvature dipole (BCD), which can be sensed using nonlinear Hall (NLH) effect. We reveal, using TDBG, that the BCD detects topological transitions in the bands and changes its sign. In TDBG, the perpendicular electric field tunes the valley Chern number and the BCD simultaneously allowing us a tunable system to probe the physics of topological transitions. Furthermore, we find hysteresis of longitudinal and NLH responses with electric field that can be attributed to switching of electric polarization in moiré systems. Such a hysteretic response holds promise for next-generation Berry curvature-based memory devices. Probing topological transitions, as we show, can be emulated in other 3D topological systems.

cond-mat.mes-hall↗

arXiv2020

Light induced resistive switching in copper oxide thin films

Copper oxide thin film based metal-insulator-metal structures were subjected to white light irradiation.The top electrodes included Al, Cr and Ni while the bottom electrode was either Au or Pt. A white light pulse controls the set process and this light induced set (LIS) can be performed at very low voltages (tens of milli volts) which is not possible in the normal set process. The LIS is initiated at the positive edge of the pulse and there is no effect of the falling edge of the light. In most cases the high resistance state (HRS) to low resistance state (LRS) transition is irreversible i.e.the devices continue to remain in the LRS even after the light pulse is switched off. Light induced reset (LIR) is achieved in only one device structure Al/CuxO/Au. By using LIS and LIR, set and reset power of the device can be reduced to a great extent and the set and reset parameters variation also reduces. The current work, thus, points to the possibility of formation and compliance-free resistive random access memory devices.

cond-mat.mtrl-sci↗

arXiv2020

Bulk valley transport and Berry curvature spreading at the edge of flat bands

2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moiré periodicity in twisted graphene systems produces flat Chern bands. The recent observation of anomalous Hall effect (AHE) and orbital magnetism in twisted bilayer graphene has been associated with spontaneous symmetry breaking of such Chern bands. However, the valley Hall state as a precursor of AHE state, when time-reversal symmetry is still protected, has not been observed. Our work probes this precursor state using the valley Hall effect. We show that broken inversion symmetry in twisted double bilayer graphene (TDBG) facilitates the generation of bulk valley current by reporting the first experimental evidence of nonlocal transport in a nearly flat band system. Despite the spread of Berry curvature hotspots and reduced quasiparticle velocities of the carriers in these flat bands, we observe large nonlocal voltage several micrometers away from the charge current path -- this persists when the Fermi energy lies inside a gap with large Berry curvature. The high sensitivity of the nonlocal voltage to gate tunable carrier density and gap modulating perpendicular electric field makes TDBG an attractive platform for valley-twistronics based on flat bands.

cond-mat.mes-hall↗

arXiv2020

Facile deterministic cutting of 2D materials for twistronics using a tapered fibre scalpel

We present a quick and reliable method to cut 2D materials for creating 2D twisted heterostructures and devices. We demonstrate the effectiveness of using a tapered fibre scalped for cutting graphene. Electrical transport measurements show evidence of the desired twist between the graphene layers fabricated using our technique. Statistics of the number of successfully twisted stacks made using our method is compared with h-BN assisted tear-and-stack method. Also, our method can be used for twisted stack fabrication of materials that are few nanometers thick. Finally, we demonstrate the versatility of the tapered fibre scalped for other shaping related applications for sensitive 2D materials.

physics.app-ph↗

arXiv2020

Tunable bandwidths and gaps in twisted double bilayer graphene system on the verge of correlations

We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands with the electric field - distinct from the twisted bilayer system. With electric field, the gap between two emergent flat bands increases monotonically and bandwidth is tuned from 1 meV to 15 meV. These two flat bands with gap result in a series of thermally induced insulator to metal transitions - we use a model, at charge neutrality, to measure the bandwidth using only transport measurements. Having two flat bands with tunable gap and bandwidth offers an opportunity to probe the emergence of correlations.

cond-mat.mes-hall↗