arXiv subjects

L. Desplanque

Publications and source records attributed to L. Desplanque.

9 recordsLinked to original sources

arXiv2021

Revisiting Coulomb diamond signatures in quantum Hall interferometers

Coulomb diamonds are the archetypal signatures of Coulomb blockade, a well-known charging effect mainly observed in nanometer-sized "electronic islands" tunnel-coupled with charge reservoirs. Here, we identify apparent Coulomb diamond features in the scanning gate spectroscopy of a quantum point contact carved out of a semiconductor heterostructure, in the quantum Hall regime. Varying the scanning gate parameters and the magnetic field, the diamonds are found to smoothly evolve to checkerboard patterns. To explain this surprising behavior, we put forward a model which relies on the presence of a nanometer-sized Fabry-P\'erot quantum Hall interferometer at the center of the constriction with tunable tunneling paths coupling the central part of the interferometer to the quantum Hall channels running along the device edges. Both types of signatures, diamonds and checkerboards, and the observed transition, are reproduced by simply varying the interferometer size and the transmission probabilities at the tunneling paths. The new proposed interpretation of diamond phenomenology will likely lead to revisit previous data, and opens the way towards engineering more complex interferometric devices with nanoscale dimensions.

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arXiv2018

2D Rutherford-Like Scattering in Ballistic Nanodevices

Ballistic injection in a nanodevice is a complex process where electrons can either be transmitted or reflected, thereby introducing deviations from the otherwise quantized conductance. In this context, quantum rings (QRs) appear as model geometries: in a semiclassical view, most electrons bounce against the central QR antidot, which strongly reduces injection efficiency. Thanks to an analogy with Rutherford scattering, we show that a local partial depletion of the QR close to the edge of the antidot can counter-intuitively ease ballistic electron injection. On the contrary, local charge accumulation can focus the semi-classical trajectories on the hard-wall potential and strongly enhance reflection back to the lead. Scanning gate experiments on a ballistic QR, and simulations of the conductance of the same device are consistent, and agree to show that the effect is directly proportional to the ratio between the strength of the perturbation and the Fermi energy. Our observation surprisingly fits the simple Rutherford formalism in two-dimensions in the classical limit.

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arXiv2015

Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy

The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites of the wires produces conductance oscillations that are periodic in the tip voltage. These oscillations take the shape of concentric circles whose number and diameter increase for more negative tip voltages until full depletion occurs in the probed region. These observations cannot be explained by charging events in material traps, but are consistent with Coulomb blockade in quantum dots forming when the potential fluctuations are raised locally at the Fermi level by the gating action of the tip. This interpretation is supported by simple electrostatic simulations in the case of a disorder potential induced by ionized dopants. This work represents a local investigation of the mechanisms responsible for the disorder-induced metal-to-insulator transition observed in macroscopic two-dimensional electron systems at low enough density.

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arXiv2013

Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network.

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arXiv2013

Coherent tunnelling across a quantum point contact in the quantum Hall regime

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged excitations, or chiral Luttinger liquid. Thanks to scanning gate microscopy, we show that a single QPC can turn into an interferometer for specific potential landscapes. Spectroscopy, magnetic field and temperature dependences of electron transport reveal a quantitatively consistent interferometric behavior of the studied QPC. To explain this unexpected behavior, we put forward a new model which relies on the presence of a quantum Hall island at the centre of the constriction as well as on different tunnelling paths surrounding the island, thereby creating a new type of interferometer. This work sets the ground for new device concepts based on coherent tunnelling.

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arXiv2013

Scanning Gate Spectroscopy of transport across a Quantum Hall Nano-Island

We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers. Scanning gate microscopy and scanning gate spectroscopy are used to first localize and then study a single QHI near a quantum point contact. The presence of Coulomb diamonds in the spectroscopy con- firms that Coulomb blockade governs transport across the QHI. Varying the microscope tip bias as well as current bias across the device, we uncover the QHI discrete energy spectrum arising from electronic confinement and we extract estimates of the gradient of the confining potential and of the edge state velocity.

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arXiv2012

Transport inefficiency in branched-out mesoscopic networks: An analog of the Braess paradox

We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A scanning-probe experiment using a biased tip to modulate the transmission of one branch in the network reveals the occurrence of this paradox by mapping the conductance variation as a function of the tip voltage and position.

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arXiv2010

Imaging Coulomb Islands in a Quantum Hall Interferometer

In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward that, as edge states come close to each other, electrons can hop between counterpropagating edge channels, or tunnel through Coulomb islands. Here, we use scanning gate microscopy to demonstrate the presence of quantum Hall Coulomb islands, and reveal the spatial structure of transport inside a quantum Hall interferometer. Electron islands locations are found by modulating the tunneling between edge states and confined electron orbits. Tuning the magnetic field, we unveil a continuous evolution of active electron islands. This allows to decrypt the complexity of high magnetic field magnetoresistance oscillations, and opens the way to further local scale manipulations of quantum Hall localized states.

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arXiv2010

Scanning-gate microscopy of semiconductor nanostructures: an overview

This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements.

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