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L. E. F. Foa Torres

Publications and source records attributed to L. E. F. Foa Torres.

At least 19 recordsLinked to original sources

Symmetry selection rule for the band-edge shift current in two dimensions

The shift current is the intrinsic bulk photovoltaic response of a crystal without an inversion center. In graphene multilayers, calculations report large band-edge shift currents that reverse sign under a gate, a behavior that neither the quantum metric nor the Berry curvature captures. We show that this follows from a symmetry principle. At the absorption edge of a gapped, inversion-broken two-dimensional Dirac-like system, an emergent rotational symmetry forbids the response, and the trigonal warping switches it on linearly in its strength, an angular selection rule that unifies multilayer graphene and the kagome lattice. The released current is governed by a signed, detuning-weighted three-point Bargmann invariant: the optical amplitude stays fixed while the sign alignment of the Bargmann triangles grows with the warping, invisible to any positive-definite figure of merit. In bilayer and trilayer graphene the gate alone reverses the sign, making the band-edge shift current a gate-switchable bulk photovoltaic response.

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Chiral magnon-polaron edge states in Heisenberg-Kitaev magnets

The interplay of spin and lattice fluctuations in two-dimensional magnets without inversion symmetry is investigated. We find a general form for the magnetoelastic coupling between magnons and existing chiral phonons based on the symmetries of the crystalline lattice. We show that in hexagonal lattices, the coupling of magnons and chiral phonons derives from an anisotropic exchange spin model containing topological phases of magnons. Using the Heisenberg-Kitaev-$Γ$ model, we show how magnon-polaron edge states with circular polarization arise from this interaction. Our findings exploit the polarization degrees of freedom in spin-lattice systems, thus setting the ground for the transfer of angular momentum between chiral phonons and magnons.

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Quadrature protection of squeezed states in a one-dimensional photonic topological insulator

What is the role of topology in the propagation of quantum light in photonic lattices? We address this question by studying the propagation of squeezed states in a topological one-dimensional waveguide array, benchmarking our results with those for a topologically trivial localized state, and studying their robustness against disorder. Specifically, we study photon statistics, one-mode and two-mode squeezing, and entanglement generation when the localized state is excited with squeezed light. These quantum properties inherit the shape of the localized state but, more interestingly, and unlike in the topologically trivial case, we find that propagation of squeezed light in a topologically protected state robustly preserves the phase of the squeezed quadrature as the system evolves. We show how this latter topological advantage can be harnessed for quantum information protocols.

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The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

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Spin-polarized tunable photocurrents

Harnessing the unique features of topological materials for the development of a new generation of topological based devices is a challenge of paramount importance. Using Floquet scattering theory combined with atomistic models we study the interplay between laser illumination, spin and topology in a two-dimensional material with spin-orbit coupling. Starting from a topological phase, we show how laser illumination can selectively disrupt the topological edge states depending on their spin. This is manifested by the generation of pure spin currents and spin-polarized charge photocurrents under linearly and circularly polarized laser-illumination, respectively. Our results open a path for the generation and control of spin-polarized photocurrents.

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Quantum Hall edge states under periodic driving: a Floquet induced chirality switch

We report on the fate of the quantum Hall effect in graphene under strong laser illumination. By using Floquet theory combined with both a low energy description and full tight-binding models, we clarify the selection rules, the quasienergy band structure, as well as their connection with the two-terminal and multi-terminal conductance in a device setup as relevant for experiments. We show that the well-known dynamical gaps that appear in the Floquet spectrum at $\pm\,\hbarΩ/2$ lead to a switch-off of the quantum Hall edge transport for different edge terminations except for the armchair one, where two terms cancel out exactly. More interestingly, we show that near the Dirac point changing the laser polarization (circular right or circular left) controls the Hall conductance, by allowing to switch it on or off, or even by flipping its sign, thereby reversing the chirality of the edge states. This might lead to new avenues to fully control topologically protected transport.

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Topological Signatures in Quantum Transport in Anomalous Floquet-Anderson Insulators

Topological states require the presence of extended bulk states, as usually found in the picture of energy bands and topological states bridging the bulk gaps. But in driven systems this can be circumvented, and one can get topological states coexisting with fully localized bulk states, as in the case of the anomalous Floquet-Anderson insulator. Here, we show the fingerprints of this peculiar topological phase in the transport properties and their dependence on the disorder strength, geometrical configuration (two-terminal and multiterminal setups) and details of the driving protocol.

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Directional control of charge and valley currents in a graphene-based device

We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be controlled by the Fermi energy and the magnetic field direction in the active device. Interestingly, unidirectional transport of charge and valley is generated between two-terminals at the same bias voltage. Furthermore, we quantify the valley depolarization as a function of disorder concentration. Our results open a way for active graphene-based valleytronics devices.

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Spatio-temporal dynamics of shift current quantum pumping by femtosecond light pulse

Shift current---a photocurrent induced by light irradiating noncentrosymmetric materials in the absence of any bias voltage or built-in electric field---is one of the mechanisms of the so-called bulk photovoltaic effect. It has been traditionally described as a nonlinear optical response of periodic solids to continuous wave light using a perturbative formula, which is linear in the intensity of light and which involves Berry connection describing the shift in the center of mass position of the Wannier wave function associated with the transition between the valence and conduction bands. We analyze realistic two-terminal devices, where paradigmatic Rice-Mele model is sandwiched between two metallic electrodes, using recently developed time-dependent nonequilibrium Green function algorithms scaling linearly in the number of time steps and capable of treating nonperturbative effects in the amplitude of external time-dependent fields. This unveils novel features: superballistic transport, signified by time dependence of the displacement, $\sim t^ν$ with $ν> 1$, of the photoexcited charge carriers from the region where the femtosecond light pulse is applied toward the electrodes; and photocurrent quadratic in light intensity at subgap frequencies of light due to two-photon absorption processes that were missed in previous perturbative analyses. Furthermore, frequency dependence of the DC component of the photocurrent reveals shift currents as a realization of nonadiabatic quantum charge pumping enabled by breaking of left-right symmetry of the device structure. This demonstrates that a much wider class of systems, than the usually considered polar noncentrosymmetric bulk materials, can be exploited to generate nonzero DC component of photocurrent in response to unpolarized light and optimize shift-current-based solar cells and optoelectronic devices.

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Topological states of non-Hermitian systems

Recently, the search for topological states of matter has turned to non-Hermitian systems, which exhibit a rich variety of unique properties without Hermitian counterparts. Lattices modeled through non-Hermitian Hamiltonians appear in the context of photonic systems, where one needs to account for gain and loss, circuits of resonators, and also when modeling the lifetime due to interactions in condensed matter systems. Here we provide a brief overview of this rapidly growing subject, the search for topological states and a bulk-boundary correspondence in non-Hermitian systems.

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Non-Hermitian robust edge states in one-dimension: Anomalous localization and eigenspace condensation at exceptional points

Capital to topological insulators, the bulk-boundary correspondence ties a topological invariant computed from the bulk (extended) states with those at the boundary, which are hence robust to disorder. Here we put forward an ordering unique to non-Hermitian lattices, whereby a pristine system becomes devoid of extended states, a property which turns out to be robust to disorder. This is enabled by a peculiar type of non-Hermitian degeneracy where a macroscopic fraction of the states coalesce at a single point with geometrical multiplicity of $1$, that we call a phenomenal point.

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Floquet bound states around defects and adatoms in graphene

Recent studies have focused on laser-induced gaps in graphene which have been shown to have a topological origin, thereby hosting robust states at the sample edges. While the focus has remained mainly on these topological chiral edge states, the Floquet bound states around defects lack a detailed study. In this paper we present such a study covering large defects of different shape and also vacancy-like defects and adatoms at the dynamical gap at $\hbarΩ/2$ ($\hbarΩ$ being the photon energy). Our results, based on analytical calculations as well as numerics for full tight-binding models, show that the bound states are chiral and appear in a number which grows with the defect size. Furthermore, while the bound states exist regardless the type of the defect's edge termination (zigzag, armchair, mixed), the spectrum is strongly dependent on it. In the case of top adatoms, the bound states quasi-energies depend on the adatoms energy. The appearance of such bound states might open the door to the presence of topological effects on the bulk transport properties of dirty graphene.

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Crafting zero-bias one-way transport of charge and spin

We explore the electronic structure and transport properties of a metal on top of a (weakly coupled) two-dimensional topological insulator. Unlike the widely studied junctions between topological non-trivial materials, the systems studied here allow for a unique bandstructure and transport steering. First, states on the topological insulator layer may coexist with the gapless bulk and, second, the edge states on one edge can be selectively switched-off, thereby leading to nearly perfect directional transport of charge and spin even in the zero bias limit. We illustrate these phenomena for Bernal stacked bilayer graphene with Haldane or intrinsic spin-orbit terms and a perpendicular bias voltage. This opens a path for realizing directed transport in materials such as van der Waals heterostructures, monolayer and ultrathin topological insulators.

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Floquet interface states in illuminated three-dimensional topological insulators

Recent experiments showed that the surface of a three dimensional topological insulator develops gaps in the Floquet-Bloch band spectrum when illuminated with a circularly polarized laser. These Floquet-Bloch bands are characterized by non-trivial Chern numbers which only depend on the helicity of the polarization of the radiation field. Here we propose a setup consisting of a pair of counter-rotating lasers, and show that one-dimensional chiral states emerge at the interface between the two lasers. These interface states turn out to be spin-polarized and may trigger interesting applications in the field of optoelectronics and spintronics.

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Floquet topological transitions in a driven one-dimensional topological insulator

The Su-Schrieffer-Heeger model of polyacetylene is a paradigmatic Hamiltonian exhibiting non-trivial edge states. By using Floquet theory we study how the spectrum of this one-dimensional topological insulator is affected by a time-dependent potential. In particular, we evidence the competition among different photon-assisted processes and the native topology of the unperturbed Hamiltonian to settle the resulting topology at different driving frequencies. While some regions of the quasienergy spectrum develop new gaps hosting Floquet edge states, the native gap can be dramatically reduced and the original edge states may be destroyed or replaced by new Floquet edge states. Our study is complemented by an analysis of Zak phase applied to the Floquet bands. Besides serving as a simple example for understanding the physics of driven topological phases, our results could find a promising test-ground in cold matter experiments.

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Multiterminal Conductance of a Floquet Topological Insulator

We report on simulations of the dc conductance and quantum Hall response of a Floquet topological insulator using Floquet scattering theory. Our results reveal that laser-induced edge states in graphene lead to quantum Hall plateaus once imperfect matching with the non-illuminated leads is lessened. But the magnitude of the Hall plateaus is not directly related to the number and chirality of all the edge states at a given energy as usual. Instead, the plateaus are dominated only by those edge states adding to the dc density of states. Therefore, the dc quantum Hall conductance of a Floquet topological insulator is not directly linked to topological invariants of the full the Floquet bands.

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On the Nature of Defects in Liquid-Phase Exfoliated Graphene

Liquid-phase exfoliation is one of the most promising routes for large scale production of multilayer graphene dispersions. These dispersions, which may be used in coatings, composites or paints, are believed to contain disorder-free graphene multilayers. Here we address the nature of defects in such samples obtained by liquid-phase exfoliation of graphite powder in N-methyl--2--pyrrolidone. Our Raman spectroscopy data challenges the assumption that these multilayers are free of bulk defects, revealing that defect localization strongly depends on the sonication time. For short ultrasound times, defects are located mainly at the layer edges but they turn out to build up in the bulk for ultrasonic times above 2 h. This knowledge may help to devise better strategies to achieve high-quality graphene dispersions.

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Irradiated graphene as a tunable Floquet topological insulator

In the presence of a circularly polarized mid-infrared radiation graphene develops dynamical band gaps in its quasi-energy band structure and becomes a Floquet insulator. Here we analyze how topologically protected edge states arise inside these gaps in the presence of an edge. Our results show that the gap appearing at $\hbarΩ/2$, where $\hbar Ω$ is the photon energy, is bridged by two chiral edge states whose propagation direction is set by the direction of the polarization of the radiation field. Therefore, both the propagation direction and the energy window where the states appear can be controlled externally. We present both analytical and numerical calculations that fully characterize these states. This is complemented by simple topological arguments that account for them and by numerical calculations for the case of semi-infinite sample, thereby eliminating finite size effects.

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