arXiv subjects

L. Gignac

Publications and source records attributed to L. Gignac.

3 recordsLinked to original sources

arXiv2026

Reliable and High Performance IGZO and In2O3 Transistors via Channel Capping

A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide material properties. An indium oxide transistor with a novel amorphous In2O3 mixed with SiO2 capping layer exhibits a positive threshold voltage, high extrinsic saturation mobility 33.1 cm2/V.s ,and only a 5mV Vt shift after positive-bias stress at 3 MV/cm for 1000s at room temperature, superior to conventional SiO2 encapsulation.

cond-mat.mtrl-sci↗

arXiv2025

Innovative Oxide Transistor Satisfying Performance and Reliability Simultaneously by Understanding of Physics and Materials Properties

Guided by a comprehensive analysis of accumulation mode transistor physics and oxide semiconductor materials properties, we demonstrate an innovative oxide semiconductor transistor structure and process flow that break the constraint between performance and reliability observed in conventional InGaZnO4 (IGZO) transistors. The newly proposed 10 nm innovative IGZO transistor features high on-current, high extrinsic mobility (20 cm2V-1s-1), near-zero hysteresis, and only 15 mV Vt shift after positive-bias-stress (PBS) of 3 MV/cm stress for 1000s at room temperature.

cond-mat.mtrl-sci↗

arXiv2001

Stable ultrahigh-density magneto-optical recordings using introduced linear defects

The stability of data bits in magnetic recording media at ultrahigh densities is compromised by thermal `flips' -- magnetic spin reversals -- of nano-sized spin domains, which erase the stored information. Media that are magnetized perpendicular to the plane of the film, such as ultrathin cobalt films or multilayered structures, are more stable against thermal self-erasure than conventional memory devices. In this context, magneto-optical memories seem particularly promising for ultrahigh-density recording on portable disks, and bit densities of $\sim$100 Gbit inch$^{-2}$ have been demonstrated using recent advances in the bit writing and reading techniques. But the roughness and mobility of the magnetic domain walls prevents closer packing of the magnetic bits, and therefore presents a challenge to reaching even higher bit densities. Here we report that the strain imposed by a linear defect in a magnetic thin film can smooth rough domain walls over regions hundreds of micrometers in size, and halt their motion. A scaling analysis of this process, based on the generic physics of disorder-controlled elastic lines, points to a simple way by which magnetic media might be prepared that can store data at densities in excess of 1 Tbit inch$^{-2}$.

cond-mat↗