arXiv subjects

L. González

Publications and source records attributed to L. González.

6 recordsLinked to original sources

arXiv2025

Ordered InAs quantum dots on pre-patterned GaAs (0 0 1) by local oxidation nanolithography

Ordered InAs quantum dot (QD) arrays have been obtained on pre-patterned GaAs (0 0 1) substrates by atomic force microscopy (AFM) local oxidation nanolithography. Prior to InAs molecular beam epitaxy (MBE) deposition, an ordered square array of nanoholes is formed at the GaAs pre-patterned surface following in situ etching with atomic hydrogen. A low substrate temperature is maintained during the whole process in order to avoid pattern smoothing. Our results show that the density and dimensions of the nanoholes on the GaAs surface determine InAs QD size, nucleation site and InAs dose necessary for their formation. As a function of the geometrical parameters of the nanohole array, we can obtain either ordered 2D arrays of separated QD, closely packed QD or localized areas for QD formation.

cond-mat.mes-hall↗

arXiv2020

Luminous Type II supernovae for their low expansion velocities

We present optical and near-IR data of three Type II supernovae (SNe II), SN 2008bm, SN 2009aj, and SN 2009au. These SNe display the following common characteristics: signs of early interaction of the ejecta with circumstellar material (CSM), blue $B\!-\!V$ colours, weakness of metal lines, low expansion velocities, and $V$-band absolute magnitudes 2-3 mag brighter than those expected for normal SNe II based on their expansion velocities. Two more SNe reported in the literature (SN 1983K and LSQ13fn) share properties similar to our sample. Analysing this set of five SNe II, which are luminous for their low expansion velocities (LLEV), we find that their properties can be reproduced assuming ejecta-CSM interaction that lasts between 4-11 weeks post explosion. The contribution of this interaction to the radiation field seems to be the dominant component determining the observed weakness of metal lines in the spectra rather than the progenitor metallicity. Based on hydrodynamic simulations, we find that the interaction of the ejecta with a CSM of ~3.6 M$_\odot$ can reproduce the light curves and expansion velocities of SN 2009aj. Using data collected by the Chilean Automatic Supernova Search, we estimate an upper limit for the LLEV SNe II fraction to be 2-4 per cent of all normal SNe II. With the current data-set, it is not clear whether the LLEV events are a separated class of SNe II with a different progenitor system, or whether they are the extreme of a continuum mediated by CSM interaction with the rest of the normal SN II population.

astro-ph.HE↗

arXiv2013

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures.

cond-mat.mtrl-sci↗

arXiv2011

Charge control in laterally coupled double quantum dots

We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.

cond-mat.mes-hall↗

arXiv2011

In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts

In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain balanced criteria commonly used indicate that it is necessary to consider the kinematics of the process, not only the nominal values for the deposited materials. We find that the substrate temperature plays a major role on the compensation process and it is necessary to take it into account in order to achieve the optimum compensation conditions. The application of the technique to quantum posts has allowed us to fabricate nanostructures of exceptional length (120 nm). In situ accumulated measurements show that, even in shorter nanostrcutures, relaxation processes can be inhibited with the resulting increase in the material quality.

cond-mat.mtrl-sci↗

arXiv2006

InAs/InP single quantum wire formation and emission at 1.5 microns

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.

cond-mat.mes-hall↗