L. H. Avanci | Searcharxiv

arXiv2004

Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

Precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (MD) experiments. Tiny sample misalignments can compromise systematic usage of MD in studies where accuracy is an important issue. In this work, theoretical treatment and experimental methods for correcting residual misalignment errors are presented and applied to probe the induced strain of buried InAs quantum dots on GaAs (001) substrates.

cond-mat.mtrl-sci↗

arXiv2004

On the high accuracy lattice-parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system

Ultra-precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (XMD) experiments. Tiny sample misalignments have hindered the systematic usage of XMD in studies where accuracy is an important issue. In this work, theoretical basement and methods for correcting general misalignment errors are presented. As a practical demonstration, the induced strain of buried InAs quantum dots grown on GaAs (001) substrates is determined. Such a demonstration confirms the possibility to investigate epitaxial nanostructures via the strain field that they generate in the substrate crystalline lattice. This work was supported by the Brazilian founding agencies FAPESP (grant numbers 02/10185-3 and 02/10387-5), CNPq (proc. number 301617/95-3 and 150144/03-2) and LNLS (under proposal number D12A-XRD1 2490/03).

cond-mat.mtrl-sci↗