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L. H. Yin

Publications and source records attributed to L. H. Yin.

4 recordsLinked to original sources

In-plane and out-of-plane electric dipoles and phase transitions in 2D-layered TlGaS2

Out-of-plane and in-plane electric polarization, which rarely coexist in a two-dimensional (2D) ferroelectric material, offer different advantages in ferroelectricity-based devices. Here, we report the coexistence of in-plane and out-of-plane electric dipoles, along with various phase transitions, in 2D van der Waals layered TlGaS2 single crystal. Quantum paraelectricity was observed along both in-plane and out-of-plane directions of the TlGaS2 crystal. Detailed investigation of the quantum paraelectric soft-mode behavior reveals a close correlation between the electric dipoles and the off-center displacement of Tl1+ ions with 6s2 lone pairs in TlGaS2. Anomalies near temperatures of about 120 K and 60-75 K in dielectric and/or infrared spectra indicate the existence of local or weak long-range structural transitions in TlGaS2. Our results provide important experimental evidence for elucidating the phase transitions and coexistence of in-plane and out-of-plane electric dipoles in 2D layered TlGaS2.

cond-mat.mtrl-sci

Magnetoelectric and Raman spectroscopic studies of single-crystalline MnCr2O4

MnCr2O4 that exhibits spin frustration and complex spiral spin order is of great interest from both fundamental as well as application-oriented perspectives. Unlike CoCr2O4 whose ground state presents the coexistence of commensurate spiral spin order (CSSO) and ferroelectric order, MnCr2O4 shows no multiferroicity. One reason is that the spiral spin order is highly sensitive to the oxygen concentration in MnCr2O4. Here, we have successfully grown high-quality single-crystalline MnCr2O4 by the chemical vapor transport method. We observe a new first-order magnetic transition from the incommensurate spiral spin order (ICSSO) at 19.4 K to the CSSO at 17.4 K. This magnetic transition is verified by magnetization, specific heat, and magnetoelectric measurements, which also confirm that the ground state exhibits the coexistence of the CSSO and magnetoelectricity below 17.4 K. Interestingly, the temperature evolution of Raman spectra between 5.4 and 300 K suggests that the structure remains the same. We also find that the phase-transition temperature of the CSSO decreases as applied magnetic field increases up to 45 kOe.

cond-mat.mtrl-sci

Magnetic evolution of Spinel Mn1-xZnxCr2O4 single crystals

Mn1-xZnxCr2O4 (0<x<1) single crystals have been grown by the chemical vapor transport (CVT) method. The crystallographic, magnetic, and thermal transport properties of the single crystals were investigated by the room-temperature X-ray diffraction, magnetization M(T) and specific heat CP(T) measurements. Mn1-xZnxCr2O4 crystals show a cubic structure, the lattice constant a decreases with the increasing content x of the doped Zn2+ ions and follows the Vegard law. Based on the magnetization and heat capacity measurements, the magnetic evolution of Mn1-xZnxCr2O4 crystals has been discussed. For 0<x<0.3, the magnetic ground state is the coexistence of the collinear ferrimagnetic order (CFIM) and spiral ferrimagnetic one (SFIM), which is similar to that of the parent MnCr2O4. When x changes from 0.3 to 0.8, the SFIM is progressively suppressed and spin glass-like behavior is observed. When x is above 0.8, an antiferromagnetic (AFM) order presents. At the same time, the magnetic specific heat (Cmag.) was also investigated and the results are coincident with the magnetic measurements. The possible reasons based on the disorder effect and the reduced molecular field effect induced by the substitution of Mn2+ ions by nonmagnetic Zn2+ ones in Mn1-xZnxCr2O4 crystals have been discussed.

cond-mat.str-el

Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4

The correlation between colossal magnetocapacitance (CMC) and colossal magnetoresistance (CMR) in CdCr2S4 system has been revealed. The CMC is induced in polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor. At the same time, an insulator-metal transition and a concomitant CMR are observed near the Curie temperature. In contrast, after the same annealing treatment, CdCr2S4 displays a typical semiconductor behavior and does not show magnetic field dependent dielectric and electric transport properties. The simultaneous occurrence or absence of CMC and CMR effects implies that the CMC in the annealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination of CMR and Maxwell-Wagner effect.

cond-mat.mtrl-sci