Nanoscale graphitization and defect evolution in silicon-vacancy center-containing nanodiamonds under high-pressure high-temperature annealing
Group-IV color centers, such as the silicon-vacancy (SiV) defect, are highly promising for solid-state quantum technologies. However, nanodiamonds typically exhibit significant lattice strain and structural disorder, which degrade their optical properties and hinder the resolution of the fine spectral structure at cryogenic temperatures. High-pressure high-temperature (HPHT) annealing offers a potential route to relax internal strain, although the phase stability of diamond at the nanoscale under such conditions remains poorly constrained. Here, we investigate the structural evolution of nanodiamonds during HPHT annealing using a Paris-Edinburgh press coupled with in situ synchrotron X-ray diffraction at SOLEIL. A dedicated sample assembly combining nanodiamonds - NaCl - Pt enabled accurate pressure-temperature calibration and real-time monitoring of phase transformations. The diffraction data reveal that the onset of diamond-to-graphite transition occurs at approximately 1800 K at 2 GPa and 2120 K at 4 GPa under the applied HPHT heating protocol. These experimentally determined graphitization onsets define a practical pressure-temperature processing window for HPHT annealing of nanodiamonds while avoiding detectable graphitization and provide a calibrated framework for reliable off-beam annealing treatments that avoid graphitization. Photoluminescence measurements on samples annealed below the graphitization threshold show improved optical response, with partial resolution of the SiV fine structure at 12 K. These optical measurements suggest a relationship between nanoscale phase stability and the optical response of individual SiV-containing nanodiamonds following HPHT annealing. The experimentally established HPHT processing window provides a practical framework for the controlled processing of quantum nanodiamonds while avoiding graphitization.