arXiv subjects

L. Jansen

Publications and source records attributed to L. Jansen.

4 recordsLinked to original sources

arXiv2025

Kondo cloud conductance in cavity-coupled quantum dots with asymmetric barriers

The Kondo effect emerges when a localized spin is screened by conduction electrons, giving rise to a strongly-correlated many-body ground state. In this work, we investigate this phenomenon in a GaAs/AlGaAs quantum dot, focusing on the spatial extension of the Kondo screening cloud in the electron reservoirs. To probe its properties, the dot is coupled to an electronic Fabry-P\'erot interferometer, enabling controlled modulation of the density of states at the Fermi level. The observation of Kondo temperature oscillations indicates a Kondo screening length comparable to the cavity size. Furthermore, we explore how the coupling asymmetry with the two reservoirs affects both the amplitude and the phase of the conductance oscillations, revealing a subtle interplay between coherent transport and Kondo effect.

cond-mat.str-el↗

arXiv2003

In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells

We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of the barrier parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties can be further influenced by applying front- or back-gate voltage.

cond-mat.mes-hall↗

arXiv2001

Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field

We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and with the field-induced transition into a decoupled bilayer. In addition, the increasing field transfers electrons from the triangular to rectangular well and, at high enough field value, the triangular well is emptied. Consequently, the electronic system becomes a single layer which leads to a sharp step in the density of electron states and to an additional minimum in the magnetoresistance curve.

cond-mat.mes-hall↗

arXiv2000

Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field

Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure.

cond-mat.mes-hall↗