arXiv subjects

L. Klopotowski

Publications and source records attributed to L. Klopotowski.

8 recordsLinked to original sources

arXiv2018

Non equilibrium anisotropic excitons in atomically thin ReS$_2$

We present a systematic investigation of the electronic properties of bulk and few layer ReS$_2$ van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by $\sim$ 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calculations predict bilayer ReS$_2$ to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases.

cond-mat.mes-hall↗

arXiv2017

Observation of A$_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride

We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra $\sim$4cm$^{-1}$ above the A$_{\text{g}}^1$ mode in trilayer and thicker flakes, which had not been observed experimentally. The newly observed mode originates from the strong black phosphorus inter-layer interaction, which induces a hardening of the surface atoms vibration with respect to the corresponding modes of the inner layers. The observation of this mode suggests a significant impact of h-BN encapsulation on the properties of black phosphorus and can serve as an indicator of the quality of its surface.

cond-mat.mes-hall↗

arXiv2017

Probing the inter-layer exciton physics in a MoS$_2$/MoSe$_2$/MoS$_2$ van der Waals heterostructure

Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe$_2$ heterostructures. Here we report on the observation of long lived inter-layer exciton emission in a MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructure. The inter-layer nature of the observed transition is confirmed by photoluminescence spectroscopy, as well as by analyzing the temporal, excitation power and temperature dependence of the inter-layer emission peak. The observed complex photoluminescence dynamics suggests the presence of quasi-degenerate momentum-direct and momentum-indirect bandgaps. We show that circularly polarized optical pumping results in long lived valley polarization of inter-layer exciton. Intriguingly, the inter-layer exciton photoluminescence has helicity opposite to the excitation. Our results show that through a careful choice of the TMDs forming the van der Waals heterostructure it is possible to control the circular polarization of the inter-layer exciton emission.

cond-mat.mes-hall↗

arXiv2016

Onset of exciton-exciton annihilation in single layer black phosphorus

The exciton dynamics in monolayer black phosphorus is investigated over a very wide range of photoexcited exciton densities using time resolved photoluminescence. At low excitation densities, the exciton dynamics is successfully described in terms of a double exponential decay. With increasing exciton population, a fast, non-exponential component develops as exciton-exciton annihilation takes over as the dominant recombination mechanism under high excitation conditions. Our results identify an upper limit for the injection density, after which exciton-exciton annihilation reduces the quantum yield, which will significantly impact the performance of light emitting devices based on single layer black phosphorus.

cond-mat.mes-hall↗

arXiv2016

Magneto-excitons in large area CVD grown monolayer MoS$_{2}$ and MoSe$_{2}$ on sapphire

Magneto transmission spectroscopy was employed to study the valley Zeeman effect in large-area monolayer MoS$_{2}$ and MoSe$_{2}$. The extracted values of the valley g-factors for both A- and B-exciton were found be similar with $g_v \simeq -4.5$. The samples are expected to be strained due to the CVD growth on sapphire at high temperature ($700^\circ$C). However, the estimated strain, which is maximum at low temperature, is only $\simeq 0.2\%$. Theoretical considerations suggest that the strain is too small to significantly influence the electronic properties. This is confirmed by the measured value of valley g-factor, and the measured temperature dependence of the band gap, which are almost identical for CVD and mechanically exfoliated MoS$_2$.

cond-mat.mes-hall↗

arXiv2015

Intervalley scattering of excitons and trions in monolayer WSe$_{2}$ under strong excitation

Monolayer transition metal dichalcogenides offer the possibility of optical control of the valley degree of freedom. In order to asses the potential of these materials in applications, detailed knowledge of the valley dynamics is essential. In this work, we apply low temperature time-resolved photoluminescence (PL) measurements to investigate exciton valley relaxation dynamics and, in particular, its behavior under strong excitation. At the lowest excitation powers the inter valley scattering time is $\simeq 50$ ps, but shortens by more than a factor of two at the highest powers. We attribute this acceleration to either heating of the exciton system or the presence of a dense exciton gas, which could influence the exciton valley properties. Furthermore, we analyze the PL dynamics of excitons and trions. We find that the PL decays for all peaks are bi-exponential and approximately independent of the excitation power. We attribute the short decay to radiative recombination and escape to a reservoir of dark states. The long decay is ascribed to a transfer of excitons back from the reservoir. For the first time, we evaluate the exciton PL decay time of $\simeq$ 10 ps. The latter process is valley-conserving and occurs on a timescale of $\simeq$ 50 ps.

cond-mat.mes-hall↗

arXiv2006

Optical Anisotropy and Pinning of the Linear Polarization of Light in Semiconductor Microcavities

We report a strong experimental evidence of the optical anisotropy in a CdTe-based microcavity: the polarization of light is pinned to one of the crystallographic axes independently on the polarization of the excitation. The polarization degree depends strongly on the excitation power, reaching almost 100 % in the stimulated regime. The relaxation time of the polarization is about 1 ns. We argue that all this is an effect of a splitting of the polariton doublet at k=0. We consider different sources for the splitting and conclude that the most likely one is optical birefringence in the mirrors and/or the cavity.

cond-mat.mtrl-sci↗

arXiv2004

Influence of Trapping on the Exciton Dynamics of Al_xGa_1-xAs Films

We present a systematic study on the exciton relaxation in high purity AlGaAs epilayers. The time for the excitonic photoluminescence to reach its maximum intensity (t_max) shows a non-monotonic dependence on excitation density which is attributed to a competition between exciton localization and carrier-carrier scattering. A phenomenological four level model fully describes the influence of exciton localization on t_max. This localization effect is enhanced by the increase of the Al content in the alloy and disappears when localization is hindered by rising the lattice temperature above the exciton trapping energy.

cond-mat.mtrl-sci↗