arXiv subjects

L. L. Bonilla

Publications and source records attributed to L. L. Bonilla.

105 records · Page 6Linked to original sources

arXiv1997

Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices

Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain formation. Three different oscillatory modes are found. Their presence depends on the actual shape of the drift velocity curve, the doping density, the boundary condition, and the length of the superlattice. For most bias regions, the self-sustained oscillations are due to the formation, motion, and recycling of the domain boundary inside the superlattice. For some biases, the strengths of the low and high field domain change periodically in time with the domain boundary being pinned within a few quantum wells. The dependency of the frequency on the coupling leads to the prediction of a new type of tunable GHz oscillator based on semiconductor superlattices.

cond-mat↗

arXiv1997

Breaking the symmetry in bimodal frequency distributions of globally coupled oscillators

The mean-field Kuramoto model for synchronization of phase oscillators with an asymmetric bimodal frequency distribution is analyzed. Breaking the reflection symmetry facilitates oscillator synchronization to rotating wave phases. Numerical simulations support the results based of bifurcation theory and high-frequency calculations. In the latter case, the order parameter is a linear superposition of parameters corresponding to rotating and counterrotating phases.

patt-sol↗

arXiv1997

Time-periodic phases in populations of nonlinearly coupled oscillators with bimodal frequency distributions

The mean field Kuramoto model describing the synchronization of a population of phase oscillators with a bimodal frequency distribution is analyzed (by the method of multiple scales) near regions in its phase diagram corresponding to synchronization to phases with a time periodic order parameter. The richest behavior is found near the tricritical point were the incoherent, stationarily synchronized, ``traveling wave'' and ``standing wave'' phases coexist. The behavior near the tricritical point can be extrapolated to the rest of the phase diagram. Direct Brownian simulation of the model confirms our findings.

patt-sol↗

arXiv1997

Asymptotic description of transients and synchronized states of globally coupled oscillators

A two-time scale asymptotic method has been introduced to analyze the multimodal mean-field Kuramoto-Sakaguchi model of oscillator synchronization in the high-frequency limit. The method allows to uncouple the probability density in different components corresponding to the different peaks of the oscillator frequency distribution. Each component evolves toward a stationary state in a comoving frame and the overall order parameter can be reconstructed by combining them. Synchronized phases are a combination of traveling waves and incoherent solutions depending on parameter values. Our results agree very well with direct numerical simulations of the nonlinear Fokker-Planck equation for the probability density. Numerical results have been obtained by finite differences and a spectral method in the particular case of bimodal (symmetric and asymmetric) frequency distribution with or without external field. We also recover in a very easy and intuitive way the only other known analytical results: those corresponding to reflection-symmetric bimodal frequency distributions near bifurcation points.

patt-sol↗

arXiv1997

Universality of the Gunn effect: self-sustained oscillations mediated by solitary waves

The Gunn effect consists of time-periodic oscillations of the current flowing through an external purely resistive circuit mediated by solitary wave dynamics of the electric field on an attached appropriate semiconductor. By means of a new asymptotic analysis, it is argued that Gunn-like behavior occurs in specific classes of model equations. As an illustration, an example related to the constrained Cahn-Allen equation is analyzed.

cond-mat.stat-mech↗

arXiv1997

Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions

A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenomenological procedure sketched here. The resulting boundary conditions, which incorporate only physically well-defined parameters, are used to study the classical unipolar drift-diffusion model for the Gunn effect. The analysis of its stationary solutions reveals the presence of bistability and hysteresis for a certain range of contact parameters. Several types of Gunn effect are predicted to occur in the model, when no stable stationary solution exists, depending on the value of the parameters of the injecting contact appearing in the boundary condition. In this way, the critical role played by contacts in the Gunn effect is clearly stablished.

cond-mat.stat-mech↗

arXiv1997

Asymptotic analysis of the Gunn effect with realistic boundary conditions

A general asymptotic analysis of the Gunn effect in n-GaAs under general boundary conditions for metal-semiconductor contacts is presented. Depending on the parameter values in the boundary condition of the injecting contact, different types of waves mediate the Gunn effect. The periodic current oscillation typical of the Gunn effect may be caused by moving charge-monopole accumulation or depletion layers, or by low or high-field charge-dipole solitary waves. A new instability caused by multiple shedding of (low field) dipole waves is found. In all cases the shape of the current oscillation is described in detail: we show the direct relationship between its major features (maxima, minima, plateau's, ...) and several critical currents (which depend on the values of the contact parameters). Our results open the possibility of measuring contact parameters from the analysis of the shape of the current oscillation.

cond-mat.stat-mech↗

arXiv1997

Asymptotics of the trap-dominated Gunn effect in p-type Ge

We present an asymptotic analysis of the Gunn effect in a drift-diffusion model---including electric-field-dependent generation-recombination processes---for long samples of strongly compensated p-type Ge at low temperature and under dc voltage bias. During each Gunn oscillation, there are different stages corresponding to the generation, motion and annihilation of solitary waves. Each stage may be described by one evolution equation for only one degree of freedom (the current density), except for the generation of each new wave. The wave generation is a faster process that may be described by solving a semiinfinite canonical problem. As a result of our study we have found that (depending on the boundary condition) one or several solitary waves may be shed during each period of the oscillation. Examples of numerical simulations validating our analysis are included.

cond-mat↗

arXiv1996

Coherent patterns and self-induced diffraction of electrons on a thin nonlinear layer

Electron scattering on a thin layer where the potential depends self-consistently on the wave function has been studied. When the amplitude of the incident wave exceeds a certain threshold, a soliton-shaped brightening (darkening) appears on the layer causing diffraction of the wave. Thus the spontaneously formed transverse pattern can be viewed as a self-induced nonlinear quantum screen. Attractive or repulsive nonlinearities result in different phase shifts of the wave function on the screen, which give rise to quite different diffraction patterns. Among others, the nonlinearity can cause self-focusing of the incident wave into a ``beam'', splitting in two ``beams'', single or double traces with suppressed reflection or transmission, etc.

cond-mat↗

arXiv1996

Current-voltage characteristic, stability, and self-sustained current oscillations in resonant-tunneling n-doped semiconductor superlattices

We review the statics and dynamics of electric-field domains on doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence we determine the intervals of doping on which self-sustained current oscillations may appear under dc voltage bias. We have also studied the influence of doping, boundary condition and length of the superlattice on the self-sustained oscillations. Our study shows that there are bistability regions where either self-sustained current oscillations or steady states are reached depending on the initial condition. For a wide bias interval, the self-sustained oscillations are due to the formation, motion and recycling of electric-field domain walls inside the superlattice. There are biases (typically in the region of bistability) for which the strength of the high and low field domains changes periodically in time while the domain wall remains almost pinned on a few quantum wells.

cond-mat↗

arXiv1996

Closure of the Monte Carlo dynamical equations in the spherical Sherrington-Kirkpatrick model

We study the analytical solution of the Monte Carlo dynamics in the spherical Sherrington-Kirkpatrick model using the technique of the generating function. Explicit solutions for one-time observables (like the energy) and two-time observables (like the correlation and response function) are obtained. We show that the crucial quantity which governs the dynamics is the acceptance rate. At zero temperature, an adiabatic approximation reveals that the relaxational behavior of the model corresponds to that of a single harmonic oscillator with an effective renormalized mass.

cond-mat↗

arXiv1995

Chaotic dynamics of electric-field domains in periodically driven superlattices

Self-sustained time-dependent current oscillations under dc voltage bias have been observed in recent experiments on n-doped semiconductor superlattices with sequential resonant tunneling. The current oscillations are caused by the motion and recycling of the domain wall separating low- and high-electric- field regions of the superlattice, as the analysis of a discrete drift model shows and experimental evidence supports. Numerical simulation shows that different nonlinear dynamical regimes of the domain wall appear when an external microwave signal is superimposed on the dc bias and its driving frequency and driving amplitude vary. On the frequency - amplitude parameter plane, there are regions of entrainment and quasiperiodicity forming Arnol'd tongues. Chaos is demonstrated to appear at the boundaries of the tongues and in the regions where they overlap. Coexistence of up to four electric-field domains randomly nucleated in space is detected under ac+dc driving.

cond-mat↗

arXiv1995

Analytical solution of the Monte Carlo dynamics of a simple spin-glass model

In this note we present an exact solution of the Monte Carlo dynamics of the spherical Sherrington-Kirkpatrick spin-glass model. We obtain the dynamical equations for a generalized set of moments which can be exactly closed. Only in a certain particular limit the dynamical equation of the energy coincides with that of the Langevin dynamics.

cond-mat↗

arXiv1995

Chaos in resonant-tunneling superlattices

Spatio-temporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.

cond-mat↗

arXiv1994

Dynamics of Electric Field Domains and Oscillations of the Photocurrent in a Simple Superlattice Model

A discrete model is introduced to account for the time-periodic oscillations of the photocurrent in a superlattice observed by Kwok et al, in an undoped 40 period AlAs/GaAs superlattice. Basic ingredients are an effective negative differential resistance due to the sequential resonant tunneling of the photoexcited carriers through the potential barriers, and a rate equation for the holes that incorporates photogeneration and recombination. The photoexciting laser acts as a damping factor ending the oscillations when its power is large enough. The model explains: (i) the known oscillatory static I-V characteristic curve through the formation of a domain wall connecting high and low electric field domains, and (ii) the photocurrent and photoluminescence time-dependent oscillations after the domain wall is formed. In our model, they arise from the combined motion of the wall and the shift of the values of the electric field at the domains. Up to a certain value of the photoexcitation, the non-uniform field profile with two domains turns out to be metastable: after the photocurrent oscillations have ceased, the field profile slowly relaxes toward the uniform stationary solution (which is reached on a much longer time scale). Multiple stability of stationary states and hysteresis are also found. An interpretation of the oscillations in the photoluminescence spectrum is also given.

cond-mat↗