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L. Langer

Publications and source records attributed to L. Langer.

4 recordsLinked to original sources

Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure

Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wave function overlap and is therefore short-ranged, so that it may be compromised across the interface. Here we study a hybrid structure consisting of a ferromagnetic Co-layer and a semiconducting CdTe quantum well, separated by a thin (Cd,Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wave function overlap of quantum well holes and magnetic Co atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 10 nm. We suggest that the resulting spin polarization of the holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.

cond-mat.mtrl-sci

Photon echoes retrieved from semiconductor spins: access to basis for long-term optical memories

The possibility to store optical information is important for classical and quantum communication. Atoms or ions as well as color centers in crystals offer suitable two-level systems for absorbing incoming photons. To obtain a reliable transfer of coherence, strong enough light-matter interaction is required, which may enforce use of ensembles of absorbers, but has the disadvantage of unavoidable inhomogeneities leading to fast dephasing. This obstacle can be overcome by echo techniques that allow recovery of the information as long as the coherence is preserved. Albeit semiconductor quantum structures appear appealing for information storage due to the large oscillator strength of optical transitions, inhomogeneity typically is even more pronounced for them and most importantly the optical coherence is limited to nanoseconds or shorter. Here we show that by transferring the information to electron spins the storage times for the optical coherence can be extended by orders of magnitude up to the spin relaxation time. From the spin reservoir it can be retrieved on purpose by inducing a stimulated photon echo. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well for which the storage time thereby could be increased by more than three orders of magnitude from the picosecond-range up to tens of nanoseconds.

cond-mat.mes-hall

Magnetic field control of photon echo in the electron-trion system: Shuffling of coherences between optically accessible and inaccessible states

We report on magnetic field induced oscillations of the photon echo signal from negatively charged excitons in a CdTe/(Cd,Mg)Te semiconductor quantum well. The oscillatory signal is due to Larmor precession of the electron spin about a transverse magnetic field and depends sensitively on the polarization configuration of the exciting and refocusing pulses. The echo amplitude can be fully tuned from maximum down to zero depending on the time delay between the two pulses and the magnetic field strength. The results are explained in terms of the optical Bloch equations accounting for the spin level structure of electron and trion.

cond-mat.mes-hall

Quantum transport in a multiwalled carbon nanotube

We report on electrical resistance measurements of an individual carbon nanotube down to a temperature T=20 mK. The conductance exhibits a ln T dependence and saturates at low temperature. A magnetic field applied perpendicular to the tube axis, increases the conductance and produces aperiodic fluctuations. The data find a global and coherent interpretation in terms of two-dimensional weak localization and universal conductance fluctuations in mesoscopic conductors. The dimensionality of the electronic system is discussed in terms of the peculiar structure of carbon nanotubes.

cond-mat