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L. M. Kandpal

Publications and source records attributed to L. M. Kandpal.

4 recordsLinked to original sources

A low-tech solution to process entire metal/molecule heterostructure stacks into vertical nanopillar electronic devices

Quantum technologies aim to assemble devices whose operation is controlled by the quantum state of individual atoms. Achieving this level of control in a practical, scalable design remains, however, a major obstacle to mass societal adoption. By working at the level of interatomic bonding, molecular engineering has enabled exquisite control over the electronic properties of individual atoms and their interactions with neighboring atoms. This positions molecular electronics as a potentially disruptive quantum technology, but serious technological challenges have prevented it from being included in technical road maps. The main obstacle is that conventional, mass scalable nanodevice technologies utilize resists and solvents that can degrade molecules. Some approaches involve exposing junction interfaces to contaminants (e.g. air, resist etc...), which can be particularly problematic for spintronics. In this technical paper, we present our decade-long work into building a nanotechnological chain that can process entire metal/molecule heterostructures into vertical nanopillars electronic devices. We discuss the advantages and pitfalls of the various iterations of this process that were implemented. We also discuss outlooks for this unique technology.

cond-mat.mes-hall

Hole transport across MgO-based magnetic tunnel junctions with high resistance-area product due to oxygen vacancies

The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin in early experiments across Ge tunnel barriers, and in the 90s across Al2O3 barriers. The conservation of the quantum parameter of orbital occupancy, as grouped into electronic symmetries, was observed in the '00s across MgO barriers, followed by SrTiO3 (STO). Barrier defects, such as oxygen vacancies, partly conserve this electronic symmetry. In the solid-state, an additional subtlety is the sign of the charge carrier: are holes or electrons involved in transport? We demonstrate that SST across MgO magnetic tunnel junctions (MTJs) with a large resistance-area (RA) product involves holes by examining how shifting the MTJ's Fermi level alters the ensuing barrier heights defined by the barrier's oxygen vacancies. In the process, we consolidate the description of tunnel barrier heights induced by specific oxygen-vacancy induced localized states. Our work opens prospects to understand the concurrent observation of high TMR and spin transfer torque across MgO-based nanopillars.

cond-mat.mes-hall

Rare-earth free yellow-green emitting NaZnPO4:Mn phosphor for lighting applications

Manganese doped sodium zinc phosphate phosphor with exceptional features having ultra-violet (UV) to visible absorption (300-470 nm), yellow-green (~543 nm) broad-band photoluminescence (PL) and appreciable color co-ordinates (x=0.39, y=0.58) is reported. It has a crystal structure consists of discrete PO4 tetrahedra linked by ZnO4 and NaO4 distorted tetrahedral such that three tetrahedra, one of each kind, share one corner. The presence of UV sensitive Zn-O-Zn bonds efficient energy transfer to Mn2+ ions resulted in brightest PL and external quantum yield of 63% at 418 nm. Our experiment demonstrated the possibility of producing inexpensive white-light emitting devices for future.

cond-mat.mtrl-sci

Probing the structure, morphology and multifold blue absorption of a new red-emitting nanophosphor for LEDs

There has been a stringent demand for blue (~450-470 nm) absorbing and red (~611 nm) emitting material system in phosphor converted white light emitting diodes (WLEDs) available in the market. Conventionally used red-emitting Y2O3:Eu3+phosphor has negligible absorption for blue light produced by GaInN based LED chip. To address this issue, a new red-emitting Gd2CaZnO5:Eu3+ (GCZO:Eu3+) nanophosphor system having exceptionally strong absorption for blue (~465 nm) and significant red (~611 nm) photoluminescence (PL) is presented. This is attributed to a dominant f-f transition (5D0\rightarrow7F2) of Eu3+ ions, aroused due to an efficient energy transfer from the Gd3+ sites of the host lattice to Eu3+ ions. X-ray diffraction and microscopy observations revealed the nanocrystalline nature and a bit elongated morphology of the sample respectively. While the energy dispersive x-ray analysis identified the chemical constituents of the GCZO:Eu3+ nanophosphor, the color overlay imaging confirmed the substitution of Eu3+ for Gd3+ ions. It is highly anticipated that the multifold absorption at ~465 nm would certainly improve the color rendering properties of existing WLEDs.

cond-mat.mes-hall