arXiv subjects

L. Massai

Publications and source records attributed to L. Massai.

3 recordsLinked to original sources

arXiv2026

Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots

Spin qubits are typically operated in the lowest orbital of a quantum dot to minimize interference from nearby states. In valence-band hole systems, strong spin-orbit coupling links spin and orbital degrees of freedom, strongly influencing the hole $g$-factor, a key parameter for qubit control. We investigate the out-of-plane $g$-factor in Ge quantum dots using excitation (single-particle) and addition (many-body) spectra. Excitation spectra allow us to distinguish the pure Zeeman $g$-factor from orbital contributions to the magnetic field splitting of states despite the strong spin-orbit coupling. This distinction clarifies discrepancies between $g$-factors extracted with the two methods, for different orbital states and different hole numbers. Furthermore, we find gate-tunability of $g$-factors at the level of 15%, highlighting its relevance for all-electric qubit manipulation.

cond-mat.mes-hall↗

arXiv2023

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with reduced hyperfine or charge noise sensitivity, the latter ultimately limits coherence, underlining the importance of understanding and reducing charge noise at its source. In this work, we study the voltage-induced hysteresis commonly observed in SiGe-based quantum devices and show that the dominant charge fluctuators are localized at the semiconductor-oxide interface. By applying increasingly negative gate voltages to Hall bar and quantum dot devices, we investigate how the hysteretic filling of interface traps impacts transport metrics and charge noise. We find that the gate-induced accumulation and trapping of charge at the SiGe-oxide interface leads to an increased electrostatic disorder, as probed by transport measurements, as well as the activation of low-frequency relaxation dynamics, resulting in slow drifts and increased charge noise levels. Our results highlight the importance of a conservative device tuning strategy and reveal the critical role of the semiconductor-oxide interface in SiGe heterostructures for spin qubit applications.

cond-mat.mes-hall↗

arXiv2023

Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity

Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in germanium have shown great promise, with recent demonstrations of fast and high-fidelity qubit operations. However, the mechanisms and anisotropies that underlie qubit driving and decoherence are still mostly unclear. Here, we report on the highly anisotropic heavy-hole $g$-tensor and its dependence on electric fields, allowing us to relate both qubit driving and decoherence to an electric modulation of the $g$-tensor. We also confirm the predicted Ising-type hyperfine interaction but show that qubit coherence is ultimately limited by $1/f$ charge noise. Finally, we operate the qubit at low magnetic field and measure a dephasing time of $T_2^*=9.2$ ${\mu}$s, while maintaining a single-qubit gate fidelity of 99.94 %, that remains well above 99 % at an operation temperature T>1 K. This understanding of qubit driving and decoherence mechanisms are key for the design and operation of scalable and highly coherent hole qubit arrays.

cond-mat.mes-hall↗