Searcharxiv⌕ Search

arXiv subjects

L. Nádvorník

Publications and source records attributed to L. Nádvorník.

9 recordsLinked to original sources
arXiv2026

Observation of Ultrafast Coherent and Incoherent Spin Torques via Terahertz Spin-Hall Magnetoresistance

Spin Hall magnetoresistance (SMR) is a cornerstone effect in spintronics, enabling the electrical readout of magnetic states through spin-orbit coupling at interfaces. Despite its widespread use, experimental studies of SMR are limited to static (DC) or low-frequency (GHz) regimes, leaving the ultrafast dynamics of interfacial spin transport in the terahertz (THz) frequency window entirely unexplored. Here, we report the observation of SMR spanning from DC to 1.5 THz in the model SMR system YIG/Pt, bridging the divide between electronic transport and THz optics. We demonstrate that the SMR response exhibits a pronounced low-pass behavior, decreasing significantly with frequency and vanishing above 1.5 THz. Through a dynamic model, we reveal that this unexpected spectral decay arises from a fundamental competition between two distinct interfacial spin-magnetization coupling mechanisms: the frequency-independent coherent spin torque, and an incoherent torque mediated by thermal magnons. Our analysis shows that the reduced THz SMR signal reflects the nonzero response time of the magnon chemical potential, which facilitates the increased outflow of incoherent magnons through the interface at high frequencies. These results resolve the microscopic nature of spin-torque generation at ultrafast timescales. Crucially, this work establishes THz SMR as a powerful, non-contact methodology capable of probing spin-magnon coupling in magnetic thin films, providing the essential tool for advancing the next generation of spintronic devices, particularly those based on high-frequency antiferromagnets and emerging altermagnetic materials.

cond-mat.mes-hall↗
arXiv2026

Spin-to-charge-current conversion in altermagnetic candidate RuO$_2$ probed by terahertz emission spectroscopy

Using the THz emission spectroscopy, we investigate ultrafast spin-to-charge current conversion in epitaxial thin films of the altermagnetic candidate RuO$_2$. We perform a quantitative analysis of competing effects that can contribute to the measured anisotropic THz emission. These include the anisotropic inverse spin splitter and spin Hall effects in RuO$_2$, the anisotropic conductivity of RuO$_2$, and the birefringence of the TiO$_2$ substrate. We observe that the leading contribution to the measured signals comes from the anisotropic inverse spin Hall effect, with an average spin-Hall angle of $2.4\times 10^{-3}$ at room temperature. In comparison, a possible contribution from the altermagnetic inverse spin-splitter effect is found to be approximately $2-4\times 10^{-4}$. Our work stresses the importance of carefully disentangling spin-dependent phenomena that can be generated by the unconventional altermagnetic order, from the effects of the relativistic spin-orbit coupling.

cond-mat.mes-hall↗
arXiv2025

Antiferromagnetic resonance in $α$-MnTe

Antiferromagnetic resonance in a bulk $α$-MnTe crystal is investigated using both frequency-domain and time-domain THz spectroscopy techniques. At low temperatures, an excitation at the photon energy of $(3.5\pm 0.1)$~meV is observed and identified as a magnon mode through its distinctive dependence on temperature and magnetic field. This behavior is reproduced using a simplified model for antiferromagnetic resonance in an easy-plane antiferromagnet. The results of our experiments, when compared to exchange constants established in the literature, allow us to extract the out-of-plane component of the single-ion magnetic anisotropy reaching $(40\pm10)$~$μ$eV.

cond-mat.mtrl-sci↗
arXiv2025

Quadratic magneto-optical Kerr effect spectroscopy: Polarization variation method for investigation of magnetic and magneto-optical anisotropies

We present a method for a precise determination of magnetic anisotropy and anisotropy of quadratic magneto-optical response of thin films of ferromagnetic and ferrimagnetic materials. The method is based on measurements of a magneto-optical response for light close to the normal incidence on the sample with a fixed position. The measurement is performed for a set of orientations of an external magnetic field and a series of incident light linear polarizations beyond the standard s and p orientations. Based on the symmetry of the signal, we are able to separate the part of magneto-optical response that is even with respect to magnetization and, in turn, to exclude all non-magnetic contributions which come from imperfections of the experimental setup or from the sample itself. It is, therefore, possible to study the sample placed inside a cryostat: the polarization changes due to cryostat windows and possible strain-induced optical anisotropy of the sample are removed by the applied data processing. Thanks to this, we can perform measurements on low or elevated temperatures (from 15 to 800 K in our case), making it possible to study the behavior of magnetic materials in different magnetic phases and/or close to phase transitions. The applicability of this experimental technique was tested by measuring the low-temperature response of two samples of ferromagnetic semiconductor (Ga,Mn)As with a different Mn content at several wavelengths, which enabled us to deduce the magnetic and quadratic magneto-optical anisotropies in this material. In particular, we observed that the anisotropy of quadratic magneto-optical coefficients in (Ga,Mn)As is much weaker than that reported previously for other magnetic material systems.

physics.optics↗
arXiv2021

Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs

We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller.

physics.app-ph↗
arXiv2017

Fast optical control of spin in semiconductor interfacial structures

We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system.

cond-mat.other↗
arXiv2016

Efficient conversion of light to charge and spin in Hall-bar microdevice

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias.

cond-mat.mes-hall↗
arXiv2016

Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias.

cond-mat.mes-hall↗
arXiv2015

Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate doping, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures.

cond-mat.mes-hall↗