arXiv subjects
Publications and source records attributed to L. Reggiani.
It is shown that the quantum fluctuation dissipation theorem can be considered as a mathematical formulation in the spectral representation of Onsager hypothesis on the regression of fluctuations in physical systems. It is shown that the quantum fluctuation dissipation theorem can be generalized to an arbitrary stationary state.
We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes negligible the effects of the Coulomb interaction on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the cross-over between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot-noise. Similar ideas can be used to interpret the noise properties of others semiconductor devices.
We predict the existence of an anomalous crossover between thermal and shot noise in macroscopic diffusive conductors. We first show that, besides thermal noise, these systems may also exhibit shot noise due to fluctuations of the total number of carriers in the system. Then we show that at increasing currents the crossover between the two noise behaviors is anomalous, in the sense that the low frequency current spectral density displays a region with a superlinear dependence on the current up to a cubic law. The anomaly is due to the non-trivial coupling in the presence of the long range Coulomb interaction among the three time scales relevant to the phenomenon, namely, diffusion, transit and dielectric relaxation time.
We present a model for electron injection from thermal reservoirs which is applied to particle simulations of one-dimensional mesoscopic conductors. The statistics of injected carriers is correctly described from nondegenerate to completely degenerate conditions. The model is validated by comparing Monte Carlo simulations with existing analytical results for the case of ballistic conductors. An excellent agreement is found for average and noise characteristics, in particular, the fundamental unities of electrical and thermal conductances are exactly reproduced.
We present a theoretical investigation of shot-noise suppression due to long-range Coulomb interaction in nondegenerate diffusive conductors. Calculations make use of an ensemble Monte Carlo simulator self-consistently coupled with a one-dimensional Poisson solver. We analyze the noise in a lightly doped active region surrounded by two contacts acting as thermal reservoirs. By taking the doping of the injecting contacts and the applied voltage as variable parameters, the influence of elastic and inelastic scattering in the active region is investigated. The transition from ballistic to diffusive transport regimes under different contact injecting statistics is analyzed and discussed. Provided significant space-charge effects take place inside the active region, long-range Coulomb interaction is found to play an essential role in suppressing the shot noise at $qU \gg k_BT$. In the elastic diffusive regime, momentum space dimensionality is found to modify the suppression factor $γ$, which within numerical uncertainty takes values respectively of about 1/3, 1/2 and 0.7 in the 3D, 2D and 1D cases. In the inelastic diffusive regime, shot noise is suppressed to the thermal value.
Shot-noise suppression is investigated in nondegenerate diffusive conductors by means of an ensemble Monte Carlo simulator. The universal 1/3 suppression value is obtained when transport occurs under elastic collision regime provided the following conditions are satisfied: (i) The applied voltage is much larger than the thermal value; (ii) the length of the device is much longer than both the elastic mean free path and the Debye length. By fully suppressing carrier-number fluctuations, long range Coulomb interaction is essential to obtain the 1/3 value in the low-frequency limit.
Within a Monte Carlo simulation we investigate the statistical properties of an electron flow injected with a Poissonian distribution and transmitted under ballistic regime in the presence of long-range Coulomb interaction. Electrons are shown to exhibit a motional squeezing which tends to space them more regularly rather than strictly at random, and evidence a sub-Poissonian statistics with a substantially reduced Fano factor $F_n\ll 1$. The temporal (anti)correlation among carriers is demonstrated to be a collective effect which persists over the transit of several successive electrons and results in a considerable (more than one order of magnitude) shot noise suppression.
We present a Monte Carlo analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor samples under a crossover between diffusive and ballistic transport regimes. By varying the mean time between collisions we find that the strong suppression observed under the ballistic regime persists under quasi-ballistic conditions, before being washed out when a complete diffusive regime is reached.
We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used for the calculations. A wide range of injection-rate densities leading to different degrees of suppression is investigated. A sharp tendency of noise suppression at increasing injection densities is found to scale with a dimensionless Debye length related to the importance of space-charge effects in the structure.