arXiv subjects

L. Sheng

Publications and source records attributed to L. Sheng.

At least 55 records · Page 3Linked to original sources

arXiv2012

Stacking-order dependence in thermoelectric transport of biased trilayer graphene

We numerically study the thermoelectric and thermal transport in trilayer graphene with different stacking orders in the presence of interlayer bias under a strong perpendicular magnetic field. In biased ABA-stacked case, we find that the thermoelectric conductivity displays different asymptotic behaviors with the varying of the temperature, similar to that of monolayer graphene. In the high temperature regime, the transverse thermoelectric conductivity $α_{xy}$ saturates to a universal value $2.77 k_B e/h$ at the center of each LL, while it displays a linear temperature dependence at low temperatures limit. The calculated transverse thermal conductivity $κ_{xy}$ exhibits two plateaus away from the band center. The transition between the two plateaus is continuous, which is accompanied by a pronounced peak in the longitudinal thermal conductivity $κ_{xx}$. In biased ABC-stacked case, it is found that both the thermoelectric conductivity and thermal conductivity have similar properties to the biased bilayer graphene, which is consistent with the behavior of a band insulator. The obtained results demonstrate the sensitivity of the thermoelectric conductivity to the band gap near the Dirac point. We also verify the validity of the Mott-relation and the generalized Wiedemann-Franz law.

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arXiv2012

Kosterlitz-Thouless transition in disordered two-dimensional topological insulators

The disorder-driven metal-insulator transition in the quantum spin Hall systems is studied by scaling analysis of the Thouless conductance $g$. Below a critical disorder strength, the conductance is independent of the sample size $M$, an indication of critically delocalized electron states. The calculated beta function $β=d\ln g/d\ln M$ indicates that the metal-insulator transition is Kosterlitz-Thouless (KT) type, which is characterized by bounding and unbounding of vortex-antivortex pairs of the local currents. The KT like metal-insulator transition is a basic characteristic of the quantum spin Hall state, being independent of the time-reversal symmetry.

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arXiv2012

A topological look at the quantum spin Hall state

We propose a topological understanding of the quantum spin Hall state without considering any symmetries, and it follows from the gauge invariance that either the energy gap or the spin spectrum gap needs to close on the system edges, the former scenario generally resulting in counterpropagating gapless edge states. Based upon the Kane-Mele model with a uniform exchange field and a sublattice staggered confining potential near the sample boundaries, we demonstrate the existence of such gapless edge states and their robust properties in the presence of impurities. These gapless edge states are protected by the band topology alone, rather than any symmetries.

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arXiv2011

Topologically Protected Extended States in Disordered Quantum Spin-Hall Systems without Time-Reversal Symmetry

We demonstrate the existence of robust bulk extended states in the disordered Kane-Mele model with vertical and horizontal Zeeman fields, in the presence of a large Rashba coupling. The phase diagrams are mapped out by using level statistics analysis and computations of the localization length and spin-Chern numbers $C_\pm$. $C_\pm$ are protected by the finite energy and spin mobility gaps. The latter is shown to stay open for arbitrarily large vertical Zeeman fields, or for horizontal Zeeman fields below a critical strength or at moderate disorder. In such cases, a change of $C_\pm$ is necessarily accompanied by the closing of the mobility gap at the Fermi level. The numerical simulations reveal sharp changes in the quantized values of $C_\pm$ when crossing the regions of bulk extended states, indicating that the topological nature of the extended states is indeed linked to the spin-Chern numbers. For large horizontal Zeeman fields, the spin-gap closes at strong disorder prompting a change in the quantized spin-Chern numbers without a closing of the energy mobility gap.

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arXiv2011

Time-reversal-symmetry-broken quantum spin Hall effect

Quantum spin Hall (QSH) state of matter is usually considered to be protected by time-reversal (TR) symmetry. We investigate the fate of the QSH effect in the presence of the Rashba spin-orbit coupling and an exchange field, which break both inversion and TR symmetries. It is found that the QSH state characterized by nonzero spin Chern numbers $C_{\pm}=\pm 1$ persists when the TR symmetry is broken. A topological phase transition from the TR symmetry-broken QSH phase to a quantum anomalous Hall phase occurs at a critical exchange field, where the bulk band gap just closes. It is also shown that the transition from the TR symmetry-broken QSH phase to an ordinary insulator state can not happen without closing the band gap.

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arXiv2011

Quantum Hall Effect in Thin Films of Three-Dimensional Topological Insulators

We show that a thin film of a three-dimensional topological insulator (3DTI) with an exchange field is a realization of the famous Haldane model for quantum Hall effect (QHE) without Landau levels. The exchange field plays the role of staggered fluxes on the honeycomb lattice, and the hybridization gap of the surface states is equivalent to alternating on-site energies on the AB sublattices. A peculiar phase diagram for the QHE is predicted in 3DTI thin films under an applied magnetic field, which is quite different from that either in traditional QHE systems or in graphene.

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arXiv2011

Thermoelectric and thermal transport in bilayer graphene systems

We numerically study the disorder effect on the thermoelectric and thermal transport for bilayer graphene under a strong perpendicular magnetic field. In the unbiased case, we find that the thermoelectric transport has similar properties as in the monolayer graphene, i.e., the Nernst signal has a peak at the central Landau level (LL) with the value of the order of $k_B/e$ and changes sign near other LLs while the thermopower has an opposite behavior. We attribute this to the coexistence of particle and hole LLs around the Dirac point. When a finite interlayer bias is applied and a band gap is opened, it is found that the transport properties are consistent with those of a band insulator. We further study the thermal transport from electronic origins and verify the validity of the generalized Weidemann-Franz law.

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arXiv2011

Fractional quantum Hall effect in the absence of Landau levels

It has been well-known that topological phenomena with fractional excitations, i.e., the fractional quantum Hall effect (FQHE) \cite{Tsui1982} will emerge when electrons move in Landau levels. In this letter, we report the discovery of the FQHE in the absence of Landau levels in an interacting fermion model. The non-interacting part of our Hamiltonian is the recently proposed topologically nontrivial flat band model on the checkerboard lattice \cite{sun}. In the presence of nearest-neighboring repulsion ($U$), we find that at 1/3 filling, the Fermi-liquid state is unstable towards FQHE. At 1/5 filling, however, a next-nearest-neighboring repulsion is needed for the occurrence of the 1/5 FQHE when $U$ is not too strong. We demonstrate the characteristic features of these novel states and determine the phase diagram correspondingly.

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arXiv2010

Universal Thermoelectric Effect of Dirac Fermions in Graphene

We numerically study the thermoelectric transports of Dirac fermions in graphene in the presence of a strong magnetic field and disorder. We find that the thermoelectric transport coefficients demonstrate universal behavior depending on the ratio between the temperature and the width of the disorder-broadened Landau levels(LLs). The transverse thermoelectric conductivity $α_{xy}$ reaches a universal quantum value at the center of each LL in the high temperature regime, and it has a linear temperature dependence at low temperatures. The calculated Nernst signal has a peak at the central LL with heights of the order of $k_B/e$, and changes sign near other LLs, while the thermopower has an opposite behavior, in good agreement with experimental data. The validity of the generalized Mott relation between the thermoelectric and electrical transport coefficients is verified in a wide range of temperatures.

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arXiv2009

Quantum Hall Effect in Bilayer Graphene: Disorder Effect and Quantum Phase Transition

We numerically study the quantum Hall effect (QHE) in bilayer graphene based on tight-binding model in the presence of disorder. Two distinct QHE regimes are identified in the full energy band separated by a critical region with non-quantized Hall Effect. The Hall conductivity around the band center (Dirac point) shows an anomalous quantization proportional to the valley degeneracy, but the $ν=0$ plateau is markedly absent, which is in agreement with experimental observation. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center and higher plateaus disappear first. The central two plateaus around the band center are most robust against disorder scattering, which is separated by a small critical region in between near the Dirac point. The longitudinal conductance around the Dirac point is shown to be nearly a constant in a range of disorder strength, till the last two QHE plateaus completely collapse.

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arXiv2009

Quantum Hall Effect in Biased Bilayer Graphene

We numerically study the quantum Hall effect in biased bilayer graphene based on a tight-binding model in the presence of disorder. Integer quantum Hall plateaus with quantized conductivity $σ_{xy}=νe^2/h$ (where $ν$ is any integer) are observed around the band center due to the split of the valley degeneracy by an opposite voltage bias added to the two layers. The central ($n=0$) Dirac Landau level is also split, which leads to a pronounced $ν=0$ plateau. This is consistent with the opening of a sizable gap between the valence and conduction bands. The exact spectrum in an open system further reveals that there are no conducting edge states near zero energy, indicating an insulator state with zero conductance. Consequently, the resistivity should diverge at Dirac point. Interestingly, the $ν=0$ insulating state can be destroyed by disorder scattering with intermediate strength, where a metallic region is observed near zero energy. In the strong disorder regime, the Hall plateaus with nonzero $ν$ are destroyed due to the float-up of extended levels toward the band center and higher plateaus disappear first.

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arXiv2009

Realizing and Detecting the Haldane's Quantum Hall effect with Ultracold Atoms

We design an ingenious scheme to realize the Haldane's quantum Hall model without Landau level by using ultracold atoms trapped in an optical lattice. Three standing-wave laser beams are used to construct a wanted honeycomb lattice, where different on-site energies in two sublattices required in the Haldane's model can be implemented through tuning the phase of one of the laser beams. The staggered magnetic field is generated from the Berry phase associated with the atom moving in a region with other three standing-wave laser beams. Moreover, we establish a relation between the Hall conductivity and the equilibrium atomic density upon turning on a stimulated uniform magnetic field, which enables us to detect the topological Chern number with the density profile measurement technique that is typically used in ultracold atoms experiments.

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arXiv2008

Broken-Symmetry States of Dirac Fermions in Graphene with A Partially Filled High Landau Level

We report on numerical study of the Dirac fermions in partially filled N=3 Landau level (LL) in graphene. At half-filling, the equal-time density-density correlation function displays sharp peaks at nonzero wavevectors $\pm {\bf q^{*}}$. Finite-size scaling shows that the peak value grows with electron number and diverges in the thermodynamic limit, which suggests an instability toward a charge density wave. A symmetry broken stripe phase is formed at large system size limit, which is robust against purturbation from disorder scattering. Such a quantum phase is experimentally observable through transport measurements. Associated with the special wavefunctions of the Dirac LL, both stripe and bubble phases become possible candidates for the ground state of the Dirac fermions in graphene with lower filling factors in the N=3 LL.

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arXiv2007

Odd-Integer Quantum Hall Effect in Graphene: Interaction and Disorder Effects

We study the competition between the long-range Coulomb interaction, disorder scattering, and lattice effects in the integer quantum Hall effect (IQHE) in graphene. By direct transport calculations, both $ν=1$ and $ν=3$ IQHE states are revealed in the lowest two Dirac Landau levels. However, the critical disorder strength above which the $ν=3$ IQHE is destroyed is much smaller than that for the $ν=1$ IQHE, which may explain the absence of a $ν=3$ plateau in recent experiments. While the excitation spectrum in the IQHE phase is gapless within numerical finite-size analysis, we do find and determine a mobility gap, which characterizes the energy scale of the stability of the IQHE. Furthermore, we demonstrate that the $ν=1$ IQHE state is a Dirac valley and sublattice polarized Ising pseudospin ferromagnet, while the $ν=3$ state is an $xy$ plane polarized pseudospin ferromagnet.

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arXiv2006

Quantum Spin Hall Effect and Topologically Invariant Chern Numbers

We present a topological description of quantum spin Hall effect (QSHE) in a two-dimensional electron system on honeycomb lattice with both intrinsic and Rashba spin-orbit couplings. We show that the topology of the band insulator can be characterized by a $2\times 2$ traceless matrix of first Chern integers. The nontrivial QSHE phase is identified by the nonzero diagonal matrix elements of the Chern number matrix (CNM). A spin Chern number is derived from the CNM, which is conserved in the presence of finite disorder scattering and spin nonconserving Rashba coupling. By using the Laughlin's gedanken experiment, we numerically calculate the spin polarization and spin transfer rate of the conducting edge states, and determine a phase diagram for the QSHE.

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arXiv2006

Quantum Hall Effect of Dirac Fermions in Graphene: Disorder Effect and Phase Diagram

We numerically study the interplay of band structure, topological invariant and disorder effect in two-dimensional electron system of graphene in a magnetic field. Two \emph{distinct} quantum Hall effect (QHE) regimes exist in the energy band with the unconventional "half-integer" QHE appearing near the band center, consistent with the experimental observation. The latter is more robust against disorder scattering than the conventional QHE states near the band edges. The phase diagram for the unconventional QHE is obtained where the destruction of the Hall plateaus at strong disorder is through the float-up of extended levels toward band center and higher plateaus always disappear first. We further predict a new insulating phase between $ν=\pm 2$ QHE states at the band center, which may explain the experimentally observed resistance discontinuity near zero gate voltage.

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arXiv2006

Theory of Phonon Hall Effect in Paramagnetic Dielectrics

Based upon spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics. The thermal Hall conductivity is calculated by using the Kubo formula. Our theory reproduces the essential experimental features of the phonon Hall effect discovered recently in ionic dielectric Tb$_3$Ga$_5$O$_{12}$, including the sign, magnitude and linear magnetic field dependence of the thermal Hall conductivity.

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arXiv2005

Spin Hall Effect and Spin Transfer in Disordered Rashba Model

Based on numerical study of the Rashba model, we show that the spin Hall conductance remains finite in the presence of disorder up to a characteristic length scale, beyond which it vanishes exponentially with the system size. We further perform a Laughlin's gauge experiment numerically and find that all energy levels cannot cross each other during an adiabatic insertion of the flux in accordance with the general level-repulsion rule. It results in zero spin transfer between two edges of the sample as each state always evolves back after the insertion of one flux quantum, in contrast to the quantum Hall effect. It implies that the topological spin Hall effect vanishes with the turn-on of disorder.

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