arXiv subjects

L. Sommer

Publications and source records attributed to L. Sommer.

3 recordsLinked to original sources

arXiv2026

Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots

Spin qubits are typically operated in the lowest orbital of a quantum dot to minimize interference from nearby states. In valence-band hole systems, strong spin-orbit coupling links spin and orbital degrees of freedom, strongly influencing the hole $g$-factor, a key parameter for qubit control. We investigate the out-of-plane $g$-factor in Ge quantum dots using excitation (single-particle) and addition (many-body) spectra. Excitation spectra allow us to distinguish the pure Zeeman $g$-factor from orbital contributions to the magnetic field splitting of states despite the strong spin-orbit coupling. This distinction clarifies discrepancies between $g$-factors extracted with the two methods, for different orbital states and different hole numbers. Furthermore, we find gate-tunability of $g$-factors at the level of 15%, highlighting its relevance for all-electric qubit manipulation.

cond-mat.mes-hall↗

arXiv2023

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with reduced hyperfine or charge noise sensitivity, the latter ultimately limits coherence, underlining the importance of understanding and reducing charge noise at its source. In this work, we study the voltage-induced hysteresis commonly observed in SiGe-based quantum devices and show that the dominant charge fluctuators are localized at the semiconductor-oxide interface. By applying increasingly negative gate voltages to Hall bar and quantum dot devices, we investigate how the hysteretic filling of interface traps impacts transport metrics and charge noise. We find that the gate-induced accumulation and trapping of charge at the SiGe-oxide interface leads to an increased electrostatic disorder, as probed by transport measurements, as well as the activation of low-frequency relaxation dynamics, resulting in slow drifts and increased charge noise levels. Our results highlight the importance of a conservative device tuning strategy and reveal the critical role of the semiconductor-oxide interface in SiGe heterostructures for spin qubit applications.

cond-mat.mes-hall↗

arXiv2007

The Light Quanta Modulated Physiological Response of Brassica Juncea Seedlings Subjected to Ni(II) Stress

This work is a study of the inter-relationship between parameters that principally affect metal up-take in the plant. The relationships between the concentration of metal in the growth medium, Cs, the concentration of metal absorbed by the plant, Cp, and the total biomass achieved, M, all of which are factors relevant to the efficiency of phytoremediation of the plant, have been investigated via the macro-physiological response of Brassica juncea seedlings to Ni(II) stress. The factorial growth experiments treated the Ni(II) concentration in the agar gel and the diurnal light quanta (DLQ) as independently variable parameters. Observations included the evidence of light enhancement of Ni toxicity at the root as well as at the whole plant level, the shoot mass index as a possible indicator of shoot metal sequestration in B. juncea, the logarithmic variation of Cp with Cs and the power-law dependence of M on Cp. The sum total of these observations indicate that for the metal accumulator B. juncea with regard to its capacity to accumulate Ni, the overall metabolic nature of the plant is important; neither rapid biomass increase nor a high metal concentration capability favor the removal of high metal mass from the medium, but rather the plant with the moderate photosynthetically driven biomass growth and moderate metal concentrations demonstrated the ability to remove the maximum mass of metal from the medium. The implications of these observations in the context of the perceived need in phytoremediation engineering to maximize Cp and M simultaneously in the same plant, are discussed.

q-bio.OT↗