arXiv subjects

L. Steinke

Publications and source records attributed to L. Steinke.

8 recordsLinked to original sources

arXiv2019

Evolution from Ferromagnetism to Antiferromagnetism in Yb(Rh1-xCox)2Si2

Yb(Rh1-xCox)2Si2 is a model system to address two challenging problems in the field of strongly correlated electron systems: The first is the intriguing competition between ferromagnetic (FM) and antiferromagnetic (AFM) order when approaching a magnetic quantum critical point (QCP). The second is the occurrence of magnetic order along a very hard crystalline electric field (CEF) direction, i.e. along the one with the smallest available magnetic moment. Here, we present a detailed study of the evolution of the magnetic order in this system from a FM state with moments along the very hard c direction at x = 0.27 towards the yet unknown magnetic state at x = 0. We first observe a transition towards an AFM canted state with decreasing x and then to a pure AFM state. This confirms that the QCP in YbRh2Si2 is AFM, but the phase diagram is very similar to those observed in some inherently FM systems like NbFe2 and CeRuPO, which suggests that the basic underlying instability might be FM. Despite the huge CEF anisotropy the ordered moment retains a component along the c-axis also in the AFM state. The huge CEF anisotropy in Yb(Rh1-xCox)2Si2 excludes that this hard-axis ordering originates from a competing exchange anisotropy as often proposed for other heavy-fermion systems. Instead, it points to an order-by-disorder based mechanism.

cond-mat.str-el↗

arXiv2018

Interplay between unconventional superconductivity and heavy-fermion quantum criticality: CeCu$_2$Si$_2$ versus YbRh$_2$Si$_2$

In this paper the low-temperature properties of two isostructural canonical heavy-fermion compounds are contrasted with regards to the interplay between antiferromagnetic (AF) quantum criticality and superconductivity. For CeCu$_2$Si$_2$, fully-gapped d-wave superconductivity forms in the vicinity of an itinerant three-dimensional heavy-fermion spin-density-wave (SDW) quantum critical point (QCP). Inelastic neutron scattering results highlight that both quantum critical SDW fluctuations as well as Mott-type fluctuations of local magnetic moments contribute to the formation of Cooper pairs in CeCu$_2$Si$_2$. In YbRh$_2$Si$_2$, superconductivity appears to be suppressed at $T\gtrsim~10$ mK by AF order ($T_N$ = 70 mK). Ultra-low temperature measurements reveal a hybrid order between nuclear and 4f-electronic spins, which is dominated by the Yb-derived nuclear spins, to develop at $T_A$ slightly above 2 mK. The hybrid order turns out to strongly compete with the primary 4f-electronic order and to push the material towards its QCP. Apparently, this paves the way for heavy-fermion superconductivity to form at $T_c$ = 2 mK. Like the pressure - induced QCP in CeRhIn$_5$, the magnetic field - induced one in YbRh$_2$Si$_2$ is of the local Kondo-destroying variety which corresponds to a Mott-type transition at zero temperature. Therefore, these materials form the link between the large family of about fifty low-$T$ unconventional heavy - fermion superconductors and other families of unconventional superconductors with higher $T_c$s, notably the doped Mott insulators of the cuprates, organic charge-transfer salts and some of the Fe-based superconductors. Our study suggests that heavy-fermion superconductivity near an AF QCP is a robust phenomenon.

cond-mat.supr-con↗

arXiv2018

Chiral transport and electronic correlations in surface states of HfNiSn single crystals

In most topological insulators, the valence and conduction band appear in reverse or inverted order compared to an equivalent insulator with isolated atoms. Here, we explore a different route towards topologically nontrivial states that may arise from metallic states present on the surface of bulk insulators without such band inversion. High-quality single crystals of HfNiSn show surface transport with weak anti-localization, consistent with a two-dimensional metallic state in the presence of strong spin-orbit coupling. Nonlinear I(V) curves indicate electronic correlations related to a chiral, nonlocal transport component that is qualitatively similar to a quantum Hall edge state, yet in the absence of external magnetic fields. The correlations themselves may play a decisive role in creating an apparent topologically nontrivial state on the HfNiSn surface.

cond-mat.mtrl-sci↗

arXiv2014

Thermodynamic evidence for valley-dependent density of states in bulk bismuth

Electron-like carriers in bismuth are described by the Dirac Hamiltonian, with a band mass becoming a thousandth of the bare electron mass along one crystalline axis. The existence of three anisotropic valleys offers electrons an additional degree of freedom, a subject of recent attention. Here, we map the Landau spectrum by angle-resolved magnetostriction, and quantify the carrier number in each valley: while the electron valleys keep identical spectra, they substantially differ in their density of states at the Fermi level. Thus, the electron fluid does not keep the rotational symmetry of the lattice at low temperature and high magnetic field, even in the absence of internal strain. This effect, reminiscent of the Coulomb pseudo-gap in localized electronic states, affects only electrons in the immediate vicinity of the Fermi level. It presents the most striking departure from the non-interacting picture of electrons in bulk bismuth.

cond-mat.str-el↗

arXiv2013

Ferromagnetic order in Yb(Rh$_{0.73}$Co$_{0.27}$)$_{2}$Si$_{2}$

We present the discovery of ferromagnetism in single crystalline Yb(Rh$_{0.73}$Co$_{0.27}$)$_{2}$Si$_{2}$ below $T_{C} = 1.30\,$K with a spontaneous magnetic moment of $0.1\,μ_{B}$/Yb along the crystallographic c-axis. This is shown by the huge c-susceptibility peak, the hysteresis in magnetization as well as by the field-dependent susceptibility and specific heat data. This discovery motivates the reinvestigation of the magnetic order in Yb(Rh$_{1-x}$Co$_{x}$)$_{2}$Si$_{2}$ with $x < 0.27$ and in pure YbRh$_{2}$Si$_{2}$ under small pressures with field along the $c$-direction to look for low-lying ferromagnetic order.

cond-mat.str-el↗

arXiv2008

Nanometer-scale sharpness in corner-overgrown heterostructures

A corner-overgrown GaAs/AlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile of 3.5 nm width. In the AlGaAs layers we observe self-ordered diagonal stripes, precipitating exactly at the corner, which are regions of increased Al content measured by an XEDS analysis. A quantitative model for self-limited growth is adapted to the present case of faceted MBE growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that MBE corner overgrowth maintains nm-sharpness even after microns of growth, allowing the realization of corner-shaped nanostructures.

cond-mat.mtrl-sci↗

arXiv2008

Hopping conduction in strongly insulating states of a diffusive bent quantum Hall junction

Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hopping at higher T to variable-range hopping conduction at lower T. The base temperature electric field dependence is consistent with 1D variable-range hopping conduction. We observe almost identical behavior at filling factors 1 and 2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hopping which either include or ignore interactions are compared, all of which are consistent with the basic model of disorder coupled counter-propagating quantum Hall edges.

cond-mat.mes-hall↗

arXiv2007

Novel metallic and insulating states at a bent quantum Hall junction

A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.

cond-mat.mes-hall↗