arXiv subjects

L. Sun

Publications and source records attributed to L. Sun.

103 records · Page 6Linked to original sources

arXiv2011

Evidence for the h_b(1P) meson in the decay Upsilon(3S) --> pi0 h_b(1P)

Using a sample of 122 million Upsilon(3S) events recorded with the BaBar detector at the PEP-II asymmetric-energy e+e- collider at SLAC, we search for the $h_b(1P)$ spin-singlet partner of the P-wave chi_{bJ}(1P) states in the sequential decay Upsilon(3S) --> pi0 h_b(1P), h_b(1P) --> gamma eta_b(1S). We observe an excess of events above background in the distribution of the recoil mass against the pi0 at mass 9902 +/- 4(stat.) +/- 2(syst.) MeV/c^2. The width of the observed signal is consistent with experimental resolution, and its significance is 3.1sigma, including systematic uncertainties. We obtain the value (4.3 +/- 1.1(stat.) +/- 0.9(syst.)) x 10^{-4} for the product branching fraction BF(Upsilon(3S)-->pi0 h_b) x BF(h_b-->gamma eta_b).

hep-ex↗

arXiv2011

Realization of Three-Qubit Quantum Error Correction with Superconducting Circuits

Quantum computers promise to solve certain problems exponentially faster than possible classically but are challenging to build because of their increased susceptibility to errors. Remarkably, however, it is possible to detect and correct errors without destroying coherence by using quantum error correcting codes [1]. The simplest of these are the three-qubit codes, which map a one-qubit state to an entangled three-qubit state and can correct any single phase-flip or bit-flip error of one of the three qubits, depending on the code used [2]. Here we demonstrate both codes in a superconducting circuit by encoding a quantum state as previously shown [3,4], inducing errors on all three qubits with some probability, and decoding the error syndrome by reversing the encoding process. This syndrome is then used as the input to a three-qubit gate which corrects the primary qubit if it was flipped. As the code can recover from a single error on any qubit, the fidelity of this process should decrease only quadratically with error probability. We implement the correcting three-qubit gate, known as a conditional-conditional NOT (CCNot) or Toffoli gate, using an interaction with the third excited state of a single qubit, in 63 ns. We find 85\pm1% fidelity to the expected classical action of this gate and 78\pm1% fidelity to the ideal quantum process matrix. Using it, we perform a single pass of both quantum bit- and phase-flip error correction with 76\pm0.5% process fidelity and demonstrate the predicted first-order insensitivity to errors. Concatenating these two codes and performing them on a nine-qubit device would correct arbitrary single-qubit errors. When combined with recent advances in superconducting qubit coherence times [5,6], this may lead to scalable quantum technology.

quant-ph↗

arXiv2011

Search for hadronic decays of a light Higgs boson in the radiative decay Upsilon --> gamma A0

We search for hadronic decays of a light Higgs boson (A0) produced in radiative decays of an Upsilon(2S) or Upsilon(3S) meson, Upsilon --> gamma A0. The data have been recorded by the BABAR experiment at the Upsilon(3S) and Upsilon(2S) center of mass energies, and include (121.3 \pm 1.2) x 10^6 Upsilon(3S) and (98.3 \pm 0.9) x 10^6 Upsilon(2S) mesons. No significant signal is observed. We set 90% confidence level upper limits on the product branching fractions B(Upsilon(nS)-->gamma A0) x B(A0-->hadrons) (n=2 or 3) that range from 1 x 10^{-6} for an A0 mass of 0.3 GeV/c^2 to 8 x 10^{-5} at 7 GeV/c^2.

hep-ex↗

arXiv2011

Observation of the baryonic B decay B0bar --> Lambda_c^+ anti-Lambda K-

We report the observation of the baryonic B decay B0bar --> Lambda_c^+ anti-Lambda K- with a significance larger than 7 standard deviations based on 471x10^6$ BBbar pairs collected with the BABAR detector at the PEP-II storage ring at SLAC. We measure the branching fraction for the decay B0bar --> Lambda_c^+ anti-Lambda K- to be (3.8 \pm 0.8_{stat} \pm 0.2_{sys} \pm 1.0_{Lambda_c^+})x10^{-5}. The uncertainties are statistical, systematic, and due to the uncertainty in the Lambda_c^+ branching fraction. We find that the Lambda_c^+ K^- invariant mass distribution shows an enhancement above 3.5 GeV/c^2.

hep-ex↗

arXiv2010

High-Fidelity Readout in Circuit Quantum Electrodynamics Using the Jaynes-Cummings Nonlinearity

We demonstrate a qubit readout scheme that exploits the Jaynes-Cummings nonlinearity of a superconducting cavity coupled to transmon qubits. We find that in the strongly-driven dispersive regime of this system, there is the unexpected onset of a high-transmission "bright" state at a critical power which depends sensitively on the initial qubit state. A simple and robust measurement protocol exploiting this effect achieves a single-shot fidelity of 87% using a conventional sample design and experimental setup, and at least 61% fidelity to joint correlations of three qubits.

cond-mat.mes-hall↗

arXiv2010

Preparation and Measurement of Three-Qubit Entanglement in a Superconducting Circuit

Traditionally, quantum entanglement has played a central role in foundational discussions of quantum mechanics. The measurement of correlations between entangled particles can exhibit results at odds with classical behavior. These discrepancies increase exponentially with the number of entangled particles. When entanglement is extended from just two quantum bits (qubits) to three, the incompatibilities between classical and quantum correlation properties can change from a violation of inequalities involving statistical averages to sign differences in deterministic observations. With the ample confirmation of quantum mechanical predictions by experiments, entanglement has evolved from a philosophical conundrum to a key resource for quantum-based technologies, like quantum cryptography and computation. In particular, maximal entanglement of more than two qubits is crucial to the implementation of quantum error correction protocols. While entanglement of up to 3, 5, and 8 qubits has been demonstrated among spins, photons, and ions, respectively, entanglement in engineered solid-state systems has been limited to two qubits. Here, we demonstrate three-qubit entanglement in a superconducting circuit, creating Greenberger-Horne-Zeilinger (GHZ) states with fidelity of 88%, measured with quantum state tomography. Several entanglement witnesses show violation of bi-separable bounds by 830\pm80%. Our entangling sequence realizes the first step of basic quantum error correction, namely the encoding of a logical qubit into a manifold of GHZ-like states using a repetition code. The integration of encoding, decoding and error-correcting steps in a feedback loop will be the next milestone for quantum computing with integrated circuits.

cond-mat.mes-hall↗

arXiv2010

On the Relation of Hard X-ray Peak Flux and Outburst Waiting Time in the Black Hole Transient GX 339-4

Aims. In this work we re-investigated the empirical relation between the hard X-ray peak flux and the outburst waiting time found previously in the black hole transient GX 339-4. We tested the relation using the observed hard X-ray peak flux of the 2007 outburst of GX 339-4, clarified issues about faint flares, and estimated the lower limit of hard X-ray peak flux for the next outburst. Methods. We included Swift/BAT data obtained in the past four years. Together with the CGRO/BATSE and RXTE/HEXTE light curves, the observations used in this work cover a period of 18 years. Results. The observation of the 2007 outburst confirms the empirical relation discovered before. This strengthens the apparent link between the mass in the accretion disk and the peak luminosity of the brightest hard state that the black hole transient can reach. We also show that faint flares with peak fluxes smaller than about 0.12 crab do not affect the empirical relation. We predict that the hard X-ray peak flux of the next outburst should be larger than 0.65 crab, which will make it at least the second brightest in the hard X-ray since 1991.

astro-ph.HE↗

arXiv2009

Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel conductance threshold. By using such a vertically coupled Al and Si SET system, we have detected a single-charge defect which is tunnel-coupled to the Si SET. By solving a simple electrostatic model, the fractions of each coupling capacitance associated with the defect are extracted. The results reveal that the defect is not a large puddle or metal island, but its size is rather small, corresponding to a sphere with a radius less than 1 nm. The small size of the defect suggests it is most likely a single-charge trap at the Si/SiO_2 interface. Based on the ratios of the coupling capacitances, the interface trap is estimated to be about 20 nm away from the Si SET.

cond-mat.mes-hall↗

arXiv2009

Catastrophic Photo-z Errors and the Dark Energy Parameter Estimates with Cosmic Shear

We study the impact of catastrophic errors occurring in the photometric redshifts of galaxies on cosmological parameter estimates with cosmic shear tomography. We consider a fiducial survey with 9-filter set and perform photo-z measurement simulations. It is found that a fraction of 1% galaxies at z_{spec}~0.4 is misidentified to be at z_{phot}~3.5. We then employ both chi^2 fitting method and the extension of Fisher matrix formalism to evaluate the bias on the equation of state parameters of dark energy, w_0 and w_a, induced by those catastrophic outliers. By comparing the results from both methods, we verify that the estimation of w_0 and w_a from the fiducial 5-bin tomographic analyses can be significantly biased. To minimize the impact of this bias, two strategies can be followed: (A) the cosmic shear analysis is restricted to 0.5 320 and 860 respectively in order to reduce the joint bias in (w_0,w_a) to be smaller than 2σand 1σ. This spectroscopic survey (option B) will improve the Figure of Merit of option A by a factor \times 1.5 thus making such a survey strongly desirable.

astro-ph↗

arXiv2008

Pressure Effect on Superconductivity of Iron-based Arsenic-oxide ReFeAsO0.85 (Re=Sm and Nd)

Here we report pressure effect on superconducting transition temperature (Tc) of ReFeAsO0.85 (Re= Sm and Nd) system without fluorine doping. In-situ measurements under high pressure showed that Tc of the two compounds decrease monotonously over the pressure range investigated. The pressure coefficients dTc/dP in SmFeAsO0.85 and Nd FeAsO0.85 were different, revealing the important influence of the deformation in layers on Tc. Theoretical calculations suggested that the electron density of states decrease with increasing pressure, following the same trend of experimental data.

cond-mat.supr-con↗

arXiv2007

Coulomb blockade in a Si channel gated by an Al single-electron transistor

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.

cond-mat.mes-hall↗

arXiv2006

Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

We present observations of background charge fluctuators near an Al-AlO_x-Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily doped substrate and top gate, which allow for independent control of the substrate and transistor island potentials. Through controlled charging of the Si/SiO_2 interface we show that the fluctuators cannot reside in the Si layer or in the tunnel barriers. Combined with the large measured signal amplitude, this implies that the defects must be located very near the oxide surface.

cond-mat.mes-hall↗

arXiv2003

A Millikelvin Scanned Probe for Measurement of Nanostructures

We demonstrate a scanning force microscope, based upon a quartz tuning fork, that operates below 100 mK and in magnetic fields up to 6 T. The microscope has a conducting tip for electrical probing of nanostructures of interest, and it incorporates a low noise cryogenic amplifier to measure both the vibrations of the tuning fork and the electrical signals from the nanostructures. At millikelvin temperatures the imaging resolution is below 1 um in a 22 um x 22 um range, and a coarse motion provides translations of a few mm. This scanned probe is useful for high bandwidth measurement of many high impedance nanostructures on a single sample. We show data locating an SET within an array and measure its coulomb blockade with a sensitivity of 2.6 x 10^-5 e/Hz^1/2.

cond-mat.mes-hall↗