arXiv subjects
Publications and source records attributed to L. V. Butov.
We present a concept and experimental proof of principle for split-gate devices for indirect excitons (IXs). The split-gate forms a narrow channel, a point contact, for IX current. Control of IX flow through the split-gate with both gate voltage and excitation power is demonstrated.
Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena in excitonic systems and developing excitonic devices operational at high temperatures. We present the observation of IXs at room temperature in van der Waals TMD heterostructures based on monolayers of MoS$_2$ separated by atomically thin hexagonal boron nitride. The IXs realized in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD, and their energy is gate controlled.
We propose a light emitting device with voltage controlled degree of linear polarization of emission. The device combines the ability of metasurfaces to control light with an energy-tunable light source based on indirect excitons in coupled quantum well heterostructures.
We report on the observation of the Pancharatnam-Berry phase in a condensate of indirect excitons (IXs) in a GaAs coupled quantum well structure. The Pancharatnam-Berry phase leads to phase shifts of interference fringes in IX interference patterns. Correlations are found between the phase shifts, polarization pattern of IX emission, and onset of IX spontaneous coherence. The Pancharatnam-Berry phase is acquired due to coherent spin precession in IX condensate. The effect of the Pancharatnam-Berry phase on the IX phase pattern is described in terms of an associated momentum.
We present the direct measurements of magnetoexciton transport. Excitons give the opportunity to realize the high magnetic field regime for composite bosons with magnetic fields of a few Tesla. Long lifetimes of indirect excitons allow the study kinetics of magnetoexciton transport with time-resolved optical imaging of exciton photoluminescence. We performed spatially, spectrally, and time-resolved optical imaging of transport of indirect excitons in high magnetic fields. We observed that increasing magnetic field slows down magnetoexciton transport. The time-resolved measurements of the magnetoexciton transport distance allowed for an experimental estimation of the magnetoexciton diffusion coefficient. An enhancement of the exciton photoluminescence energy at the laser excitation spot was found to anti-correlate with the exciton transport distance. A theoretical model of indirect magnetoexciton transport is presented and is in agreement with the experimental data.
We present theoretical studies of condensation of indirect excitons in a trap. Our model quantifies the effect of screening of the trap potential by indirect excitons on exciton condensation. The theoretical studies are applied to a system of indirect excitons in a GaAs/AlGaAs coupled quantum well structure in a diamond-shaped electrostatic trap where exciton condensation was studied in earlier experiments. The estimated condensation temperature of the indirect excitons in the trap reaches hundreds of milliKelvin.
We present spatially- and spectrally-resolved photoluminescence measurements of indirect excitons in high magnetic fields. Long indirect exciton lifetimes give the opportunity to measure magnetoexciton transport by optical imaging. Indirect excitons formed from electrons and holes at zeroth Landau levels (0e - 0h indirect magnetoexcitons) travel over large distances and form a ring emission pattern around the excitation spot. In contrast, the spatial profiles of 1e - 1h and 2e - 2h indirect magnetoexciton emission closely follow the laser excitation profile. The 0e - 0h indirect magnetoexciton transport distance reduces with increasing magnetic field. These effects are explained in terms of magnetoexciton energy relaxation and effective mass enhancement.
We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical estimate of the exciton correlation parameter and temperature. We also present a proof-of-principle demonstration of the method for determining the correlation parameter and discuss how its accuracy can be improved.
We report on the principle and realization of an excitonic device: a ramp that directs the transport of indirect excitons down a potential energy gradient created by a perforated electrode at constant voltage. The device provides an experimental proof of principle for controlling exciton transport with electrode density gradients. We observed that the exciton transport distance along the ramp increases with increasing exciton density. This effect is explained in terms of disorder screening by repulsive exciton-exciton interactions.
We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decrease at higher fields. We argue that this non-monotonic spin relaxation dynamics is a fingerprint of the magnetic quantum confined Stark effect. In the presence of electric field along the CQW growth axis, an applied magnetic field efficiently suppresses the exciton spin coherence, due to inhomogeneous broadening of the $g$-factor distribution.
We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of \Mo* and hexagonal boron nitride (hBN). The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.
At low temperatures, indirect excitons formed at the in-plane electron-hole interface in a coupled quantum well structure undergo a spontaneous transition into a spatially modulated state. We report on the control of the instability wavelength, measurement of the dynamics of the exciton emission pattern, and observation of the fluctuation and commensurability effect of the exciton density wave. We found that fluctuations are strongly suppressed when the instability wavelength is commensurate with defect separation along the exciton density wave. The commensurability effect is also found in numerical simulations within the model describing the exciton density wave in terms of an instability due to stimulated processes.
Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons and residual free electrons in coupled quantum wells. Measured spin relaxation time of indirect excitons exceeds not only one of direct excitons, but also one of free electrons by two orders of magnitude.
We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency.
All known superfluid and superconducting states of condensed matter are enabled by composite bosons (atoms, molecules, Cooper pairs) made of an even number of fermions. Temperatures where such macroscopic quantum phenomena occur are limited by the lesser of the binding energy and the degeneracy temperature of the bosons. High critical temperature cuprate superconductors set the present record of ~100 K. Here we propose a design for artificially structured materials to rival this record. The main elements of the structure are two monolayers of a transition metal dichalcogenide separated by an atomically thin spacer. Electrons and holes generated in the system would accumulate in the opposite monolayers and form bosonic bound states --- the indirect excitons. The resultant degenerate Bose gas of indirect excitons would exhibit macroscopic occupation of a quantum state and vanishing viscosity at high temperatures.
Traditional spintronics relies on spin transport by charge carriers, such as electrons in semiconductor crystals. This brings several complications: the Pauli principle prevents the carriers from moving with the same speed; Coulomb repulsion leads to rapid dephasing of electron flows. Spin-optronics is a valuable alternative to traditional spintronics. In spin-optronic devices the spin currents are carried by electrically neutral bosonic quasi-particles: excitons or exciton-polaritons. They can form highly coherent quantum liquids and carry spins over macroscopic distances. The price to pay is a finite life-time of the bosonic spin carriers. We present the theory of exciton ballistic spin transport which may be applied to a range of systems where bosonic spin transport has been reported, in particular, to indirect excitons in coupled GaAs/AlGaAs quantum wells. We describe the effect of spin-orbit interaction of electrons and holes on the exciton spin, account for the Zeeman effect induced by external magnetic fields, long range and short range exchange splittings of the exciton resonances. We also consider exciton transport in the non-linear regime and discuss the definitions of exciton spin current, polarization current and spin conductivity.
We propose the application of nonlinear optics for studies of spatially indirect excitons in coupled quantum wells. We demonstrate, that despite their vanishing oscillator strength, indirect excitons can strongly contribute to the photoinduced reflectivity and Kerr rotation. This phenomenon is governed by the interaction between direct and indirect excitons. Both dark and bright states of indirect excitons can be probed by these nonlinear optical techniques.
Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers.