arXiv subjects

L. Z. Tan

Publications and source records attributed to L. Z. Tan.

6 recordsLinked to original sources

arXiv2025

The Polarization Projected Density Matrix: A Practical Way to Recover Molecular Frame Information from Isotropic Samples

We present a novel approach to model ultrafast time-dependent nonlinear optical polarization sensitive signals emitted from randomly-oriented molecules. By projecting the laboratory-frame analyzer polarization axis into the molecular frame and linking that axis with the density matrix through a tensor product, we demonstrate an approach to find a specific molecular orientation that yields a good approximation to simulated four-wave mixing signals produced by the same model but with averaging over molecular orientation.

physics.chem-ph↗

arXiv2024

Characteristic THz-emissions induced by optically excited collective orbital modes

We study the generation of collective orbital modes, their evolution, and the characteristic nonlinear optical response induced by them in a photoinduced orbital-ordered correlated oxide using real-time simulations based on an interacting multiband tight-binding (TB) model. The d-d optical transitions under femtoseconds light-pulse in an orbital-ordered state excite collective orbital modes, also known as "orbitons". Consistently incorporating electronic interactions and the interplay between charge, spin, and lattice degrees of freedom in the TB-model provides a clearer understanding of how these factors influence the generation and evolution of collective orbital modes. The dynamics of Jahn-Teller vibrational modes in the photoinduced state modify the intersite orbital interaction, which further amplifies these orbital modes. In the presence of weak ferroelectricity, the excitation of collective orbital modes induces a strong THz oscillatory photocurrent, which is long-lived. This suggests an alternative way to experimentally detect low-energy collective modes through THz-emission studies in the photoinduced state. Our study also elucidates that quasiparticle dynamics in improper ferroelectric oxides can be exploited to achieve highly interesting and non-trivial optoelectronic properties.

cond-mat.str-el↗

arXiv2023

Excitons and singlet fission at hybrid inorganic-organic semiconductor interfaces

Excitons in organic crystalline semiconductors play a crucial role in the operation of optoelectronic devices such as organic solar cells, light-emitting diodes, and photodetectors. The excitonic properties of materials are dramatically affected by the presence of surfaces and interfaces. In this work, we investigate the influence of a neutral hydrogen-passivated 1x2 reconstructed (100) silicon substrate on excitons within the crystalline tetracene layer deposited on the top of it. Our findings reveal that singlet excitons in the contact tetracene layer are situated within the continuum of unbound Wannier-Mott excitonic states in silicon, with noteworthy hybridization between these states. Consequently, in the contact tetracene layer, all singlet excitons exhibit a pronounced interlayer charge transfer character, while the triplet exciton remains confined to the tetracene layer. This makes the singlet fission effect highly improbable for the contact tetracene layer. Additionally, the presence of the silicon substrate results in a modification of the singlet-triplet gap by 144 meV. This change is solely attributed to the hybridization with excitons in silicon, which influences the exchange energy. Our results show that the dynamic dielectric screening caused by the substrate does not impact the singlet-triplet gap but alters the exciton binding energies.

cond-mat.mtrl-sci↗

arXiv2023

Programmable quantum emitter formation in silicon

Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using fs laser pulses in combination with hydrogen-based defect activation and passivation. By selecting forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we form Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with very promising spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen and enable programmable quantum emitter formation in a qubit-by-design paradigm.

quant-ph↗

arXiv2022

A many-body perturbation theory approach to energy band alignment at the crystalline tetracene-silicon interface

Hybrid inorganic-organic semiconductor interfaces are of interest for new photovoltaic devices operating above the Shockley-Queisser limit. Predicting energy band alignment at the interfaces is crucial for their design, but represents a challenging problem due to the large scales of the system, the energy precision required and a wide range of physical phenomena that occur at the interface. To tackle this problem, we use many-body perturbation theory in the non-self-consistent GW approximation, orbital relaxation corrections for organic semiconductors, and line-up potential method for inorganic semiconductors which allows for tractable and accurate computing of energy band alignment in crystalline van-der-Waals hybrid inorganic-organic semiconductor interfaces. In this work, we study crystalline tetracene physisorbed on the clean hydrogen-passivated 1x2 reconstructed (100) silicon surface. Using this computational approach, we find that the energy band alignment is determined by an interplay of the mutual dynamic dielectric screening of two materials and the formation of a dipole layer due to a weak hybridization of atomic/molecular orbitals at the interface. We also emphasize the significant role of the exchange-correlation effects in predicting band offsets for the hybrid inorganic-organic semiconductor interfaces.

cond-mat.mtrl-sci↗

arXiv2016

Effective Mass in Bilayer Graphene at Low Carrier Densities: the Role of Potential Disorder and Electron-Electron Interaction

In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi liquid parameters such as the effective mass of carriers. We combine experiment and theory to study the effective masses of electrons and holes $m^*_e$ and $m^*_h$ in bilayer graphene in the low carrier density regime of order 1 * 10^11 cm^-2. Measurements use temperature-dependent low-field Shubnikov-de Haas (SdH) oscillations are observed in high-mobility hexagonal boron nitride (h-BN) supported samples. We find that while $m^*_e$ follows a tight-binding description in the whole density range, $m^*_h$ starts to drop rapidly below the tight-binding description at carrier density n = 6 * 10^11 cm^-2 and exhibits a strong suppression of 30% when n reaches 2 * 10^11 cm^-2. Contributions from electron-electron interaction alone, evaluated using several different approximations, cannot explain the experimental trend. Instead, the effect of potential fluctuation and the resulting electron-hole puddles play a crucial role. Calculations including both the electron-electron interaction and disorder effects explain the experimental data qualitatively and quantitatively. This study reveals an unusual disorder effect unique to two-dimensional semi-metallic systems.

cond-mat.mes-hall↗