arXiv subjects

Lachlan Oberg

Publications and source records attributed to Lachlan Oberg.

5 recordsLinked to original sources

arXiv2026

Quantum computing for transport research: an introduction, systematic review, and perspective

Transport engineering has significant potential to benefit from quantum computing. The rise of intelligent transport systems, autonomous vehicles, and the Internet of Things has created an unprecedented demand for efficient information processing and computational optimisation. Accordingly, transport engineers and scientists have explored the ever-improving capabilities of quantum computers in an effort to meet this demand. Motivated by this growing interest, this paper sets out four aims: (1) to introduce the fundamental aspects of quantum computing relevant to the transport domain, (2) to identify transport-related problems which are suitable for quantum acceleration, (3) to develop a pipeline for solving these problems, and (4) to provide a systematic review of the existing literature. For the latter, a systematic search of the Scopus database (and supplemented by additional citation sources) identified 103 studies for inclusion following PRISMA 2020 guidelines. While a diverse set of use cases have been proposed, we conclude that future research should prioritise problems where quantum computation offers a clear practical benefit. To this end, we suggest promising directions to guide further work in this burgeoning subfield.

quant-ph↗

arXiv2026

Tunneling probe-based identification of the sp${}^3$ dangling bond on the H-C(100):$2\times1$ surface

The sp${}^3$ dangling bond on the diamond surface plays a critical role in the performance and fabrication of diamond quantum technologies. For the former, the magnetic and electric properties of this defect can impede the performance of quantum sensors and computers. For the latter, the chemical properties of the dangling bond are integral to proposed methods for bottom-up fabrication of scalable diamond quantum devices. In pursuit of high performance and scalable diamond quantum technology, tunneling probe-based techniques offers the ability to create and modify the sp${}^3$ dangling bond with atomic-scale precision. However, these capabilities cannot be realised either deterministically or at scale without a means for identifying the sp${}^3$ dangling bond amidst the myriad of other defects on the diamond surface. Consequently, in this work we provide a comprehensive experimental and theoretical framework for STS-based characterisation of the sp${}^3$ defect on the H-terminated (100) diamond surface. This capability provides the foundation for future tunneling probe studies in the modification of dangling bonds.

cond-mat.mes-hall↗

arXiv2024

Identification of defects and the origins of surface noise on hydrogen-terminated (100) diamond

Near-surface nitrogen-vacancy centres are critical to many diamond-based quantum technologies such as information processors and nanosensors. Surface defects play an important role in the design and performance of these devices. The targeted creation of defects is central to proposed bottom-up approaches to nanofabrication of quantum diamond processors, and uncontrolled surface defects may generate noise and charge trapping which degrade shallow NV device performance. Surface preparation protocols may be able to control the production of desired defects and eliminate unwanted defects, but only if their atomic structure can first be conclusively identified. This work uses a combination of scanning tunnelling microscopy (STM) imaging and first-principles simulations to identify several surface defects on H:C(100)-2x1 surfaces prepared using chemical vapour deposition (CVD). The atomic structure of these defects is elucidated, from which the microscopic origins of magnetic noise and charge trapping is determined based on modelling of their paramagnetic properties and acceptor states. Rudimentary control of these deleterious properties is demonstrated through STM tip-induced manipulation of the defect structure. Furthermore, the results validate accepted models for CVD diamond growth by identifying key adsorbates responsible for nucleation of new layers.

cond-mat.mes-hall↗

arXiv2024

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

A significant hurdle in developing high-performance semiconductor quantum technologies utilizing deep defects is related to charge dynamics. Unfortunately, progress in modeling their charge dynamics has been hindered over recent decades due to the absence of appropriate multiscale models capable of accurately representing the atomic properties of these defects and their impact on device performance. Here, we present a semi-\textit{ab initio} method for modeling the bound states of deep defects in semiconductor quantum technologies, applied to the negatively charged nitrogen vacancy (NV$^-$) center in diamond. We employ density functional theory calculations to construct accurate potentials for an effective mass model, which allow us to unveil the structure of the bound hole states. We develop a model to calculate the nonradiative capture cross sections, which agrees with experiment within one order of magnitude. Finally, we present our attempt at constructing the photoionization spectrum of NV$^0\rightarrow$ NV$^-$ + bound hole, showing that the electronic transitions of the bound holes can be distinguished from phonon sidebands. This paper offers a practical and efficient solution to a long-standing challenge in understanding the charge dynamics of deep defects.

cond-mat.mes-hall↗

arXiv2021

Spin-to-Charge conversion with electrode confinement in diamond

The nitrogen-vacancy (NV) center in diamond has a wide range of potential applications in quantum metrology, communications and computation. The key to its use lies in how large the optical spin contrast is and the associated fidelity of spin state readout. In this paper we propose a new mechanism for improving contrast with a spin-to-charge protocol that relies on the use of an external electrode and cryogenic temperatures to discretize the diamond conduction band for spin-selective resonant photoionization. We use effective mass theory to calculate the discrete eigenenergies in this new system and use them to formulate a new spin-to-charge protocol that involves resonant photoionization out the NV ground state into the diamond conduction band. The major sources of broadening are also addressed which guide the design of the experiment. With this mechanism we theorise an optical spin contrast that and an associated spin readout fidelity of 85%. This significant improvement can be applied to a number of cryogenic quantum technologies.

quant-ph↗