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Lalhum Hima

Publications and source records attributed to Lalhum Hima.

2 recordsLinked to original sources

Interfacial effect on the optoelectronic and piezoelectric properties of Ge-Sn terminated Halide Perovskite heterostructure from first-principles study

Since the very early stages of research on sustainable technologies, green energy conversion has always been a prime focus. With the discoveries of countless functional materials in recent years, significant progress has been made to meet the global energy demand for sustainable development. Among them, halide perovskites have emerged as one of the most promising and reliable materials. In this work, we have investigated the lead-free halide perovskites, vis CsGeCl3 and RbSnBr3, within a framework of density functional theory (DFT) to explore their potential applicability in harvesting clean and renewable energy. This study gives a comprehensive analysis of the bulk, surface (001), and Ge-Sn-terminated interfaces within GGA and mGGA functionals. Interestingly, the inherent asymmetric arrangements of the systems exhibit remarkable optoelectronic and piezoelectric properties. The piezoelectric performance of each surface cut has been validated through the electromechanical coupling calculation.

cond-mat.mtrl-sci

Modulation of electronic and piezoelectric properties of lead-free halide perovskites LiSnX$_3$ (X = Cl, Br, and I) under applied pressure

Pb-based perovskites are considered to be the most efficient materials for energy harvest. However, real-time application is limited because of their toxicity. As a result, lead-free perovskites that offer similar advantages are potential alternatives. Here, we have chosen LiSnX$_3$ (X = Cl, Br, and I) for further calculation and explore its possibilities for harvesting clean and green energy. Our objective is to examine strategies for optimizing the parameters that control the energy-harvesting capabilities, particularly the interplay between structural variations and electrical properties. The density functional theory (DFT) has been employed for the theoretical simulation. Within the DFT framework, we have studied the effect of applied pressure (0 to 20 GPa) and elemental substitution on their physical properties. We hereby report the variation of lattice parameters, elastic constants, band gaps, and piezoelectric constants. MD simulation with time steps of up to 5 ps was performed to verify structural stability at room temperature. We report the semi-conducting characteristic of LiSnX$_3$ and the high piezoelectric response up to 20.7 Cm2. The presence of high piezoelectric coefficients suggests that manipulation of the structure of LiSnX$_3$ may provide an alternative way to harvest energy through electromechanical processes.

cond-mat.mtrl-sci