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Lan Chen

Publications and source records attributed to Lan Chen.

At least 91 records · Page 5Linked to original sources

Enhancement of electron transport and bandgap opening in graphene induced by adsorbates

Impurities are unavoidable during the preparation of graphene samples and play an important role in graphene's electronic properties when they are adsorbed on graphene surface. In this work, we study the electronic structures and transport properties of a two-terminal zigzag graphene nanoribbon (ZGNR) device whose scattering region is covered by various adsorbates within the framework of the tight-binding approximation, by taking into account the coupling strength $γ$ between adsorbates and carbon atoms, the adsorbate concentration $n_i$, and the on-site energy disorder of adsorbates. Our results indicate that when the scattering region is fully covered by homogeneous adsorbates, i.e., $n_i=1$, a transmission gap opens around the Dirac point and its width is almost proportional to $γ^2$. In particular, two conductance plateaus of $G=2e^2/h$ appear in the vicinity of the electron energy $E=\pm γ$. When the scattering region is partially covered by homogeneous adsorbates ($0<n_i<1$), the transmission gap still survives around the Dirac point even at low $n_i$, and its width is firstly increased by $n_i$ and then declined by further increasing $n_i$; whereas the conductance decreases with $n_i$ in the regime of low $n_i$ and increases with $n_i$ in the regime of high $n_i$. While in the presence of disordered adsorbates whose on-site energies are random variables characterized by the disorder degree, the transmission gap disappears at low $n_i$ and reappears at relatively high $n_i$. Furthermore, the transmission ability of the ZGNR device can be enhanced by the adsorbate disorder when the disorder degree surpasses a critical value, contrary to the localization picture that the conduction of a nanowire becomes poorer with increasing the disorder degree. The physics underlying these transport characteristics is discussed. Our results are in good agreement with experiments.

cond-mat.mes-hall↗

Experimental Realization of Two-Dimensional Buckled Lieb lattice

Two-dimensional (2D) materials with a Lieb lattice can host exotic electronic band structures. Such a system does not exist in nature, and it is also difficult to obtain in the laboratory due to its structural instability. Here, we experimentally realized a 2D system composed of a tin overlayer on an aluminum substrate by molecular beam epitaxy. The specific arrangement of Sn atoms on the Al(100) surface, which benefits from favorable interface interactions, forms a stabilized buckled Lieb lattice. Our theoretical calculations indicate a partially broken nodal line loop protected by its mirror reflection symmetry and a topologically nontrivial insulating state with a spin-orbital coupling (SOC) effect in the band structure of this Lieb lattice. The electronic structure of this system has also been experimentally characterized by scanning tunnelling spectroscopy and angle-resolved photoemmision spectroscopy. Our work provides an appealing method for constructing 2D quantum materials based on the Lieb lattice.

cond-mat.mtrl-sci↗

One Dimensional Nearly Free Electron States in Borophene

Two-dimensional boron (borophene) is featured by its structural polymorphs and distinct in-plane anisotropy, opening opportunities to achieve tailored electronic properties by intermixing different phases. Here, using scanning tunneling spectroscopy combined with first-principles calculations, delocalized one-dimensional nearly free electron states (NFE) in the (2,3) or \b{eta}12 borophene sheet on the Ag(111) surface were observed. The NFE states emerge from a line defect in the borophene, manifested as a structural unit of the (2,2) or \c{hi}3 sheet, which creates an in-plane potential well that shifts the states toward the Fermi level. The NFE states are held in the 2D plane of borophene, rather than in the vacuum region as observed in other nanostructures. Furthermore the borophene can provide a rare prototype to further study novel NFE behaviors, which may have potential applications on transport or field emission nanodevices based on boron.

cond-mat.mtrl-sci↗

Experimental realization of graphene-like borophene

We report a successful preparation of a purely honeycomb, graphene-like borophene, by using an Al(111) surface as the substrate and molecular beam epitaxy (MBE) growth in ultrahigh vacuum. Our scanning tunneling microscopy (STM) reveals perfect monolayer borophene with planar, non-buckled honeycomb lattice similar as graphene. Theoretical calculations show that the honeycomb borophene on Al(111) is energetically stable. Remarkably, nearly one electron charge is transferred to each boron atom from the Al(111) substrate and stabilizes the honeycomb borophene structure, in contrast to the little charge transfer in borophene/Ag(111) case. This work demonstrates that the borophene lattice can be manipulated by controlling the charge transfer between the substrate and the borophene film.

cond-mat.mes-hall↗

Direct evidences of pentagonal silicon chains and magic clusters

Pentagon is one of the most beautiful geometric structures in nature, but it is rarely seen simply because five-fold symmetry is mathematically forbidden in a 2D or 3D periodic lattices. Fortunately, pentagon as a structural element is allowed in 1D or 0D systems, since translational symmetry is not necessary there. However, in these systems pentagons only compose a small portion of the structure. So far, 1D or 0D systems consisting of purely pentagons are still rare. Here, combing high resolution non-contact atomic force microscopy and tip-enhanced Raman spectroscopy, we have directly visualized the pentagon-ring structure in self-assembled Si nanoribbons and magic clusters on Ag(110) substrate. Moreover, chemical fingerprint of Si pentagon was detected in individual Si nanoribbon and clusters by tip-enhanced Raman spectroscopy. This work demonstrates that Si pentagon can be an important element in building silicon nanostructures, which may find potential applications in future nanoelectronics based on silicon.

cond-mat.mes-hall↗

Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si

Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a new platform to study the novel physical properties in two-dimensional Dirac materials and provide new opportunities to realize high-speed low-dissipation devices.

cond-mat.mtrl-sci↗

Realization of Flat Band with Possible Nontrivial Topology in Electronic Kagome Lattice

The energy dispersion of fermions or bosons vanishes in momentum space if destructive quantum interference occurs in a frustrated Kagome lattice with only nearest-neighbour (NN) hopping. A discrete flat band (FB) without any dispersion is consequently formed, promising emergence of fractional quantum Hall states (FQHS) at high temperatures. Here, we report experimental realization of a FB with possible nontrivial topology in an electronic Kagome lattice on a twisted multilayer silicene. The electrons are localized in the Kagome lattice due to quantum destructive interference, and thus, their kinetic energy is quenched, which gives rise to a FB peak in density of states. A robust and pronounced one-dimensional edge state has been revealed at Kagome edge, which resides at higher energy than the FB. Our observations of the FB and the exotic edge state in electronic Kagome lattice open up the possibility towards the realization of fractional Chern insulators in two-dimensional materials.

cond-mat.mtrl-sci↗

Strain-Induced Band Engineering in Monolayer Stanene on Sb(111)

Two-dimensional (2D) allotrope of tin with low buckled honeycomb structure, named as stanene, is proposed to be an ideal 2D topological insulator with a nontrivial gap larger than 0.1 eV. Theoretical works also pointed out the topological property of stanene occurs by strain tuning. In this letter, we report the successful realization of high quality, monolayer stanene film as well as monolayer stanene nanoribbons on Sb(111) surface by molecular beam epitaxy, providing an ideal platform to the study of stanene. More importantly, we observed a continuous evolution of the electronic bands of stanene across a nanoribbon, which are related to the strain field gradient in stanene. Our work experimentally confirmed that strain is an effective method for band engineering in stanene, which is important for fundamental research and application of stanene.

cond-mat.mtrl-sci↗

Synthesis of Borophene Nanoribbons on Ag(110) Surface

We present the successful synthesis of single-atom-thick borophene nanoribbons (BNRs) by self-assembly of boron on Ag(110) surface. The scanning tunneling microscopy (STM) studies reveal high quality BNRs: all the ribbons are along the [-110] direction of Ag(110), and can run across the steps on the surface. The width of ribbons is distributed in a narrow range around 10.3 nm. High resolution STM images revealed four ordered surface structures in BNRs. Combined with DFT calculations, we found that all the four structures of boron nanoribbons consist of the boron chains with different width, separated by hexagonal hole arrays. The successful synthesis of BNRs enriches the low dimensional allotrope of boron and may promote further applications of borophene

cond-mat.mtrl-sci↗

Dirac fermions in borophene

Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) surface. Our tight-binding analysis revealed that the lattice of the β12-sheet could be decomposed into two triangular sublattices in a way similar to that for a honeycomb lattice, thereby hosting Dirac cones. Furthermore, each Dirac cone could be split by introducing periodic perturbations representing overlayer-substrate interactions. These unusual electronic structures were confirmed by angle-resolved photoemission spectroscopy and validated by first-principles calculations. Our results suggest monolayer boron as a new platform for realizing novel high-speed low-dissipation devices.

cond-mat.mtrl-sci↗

Direct Evidence of Metallic Bands in a Monolayer Boron Sheet

The search for metallic boron allotropes has attracted great attention in the past decades and recent theoretical works predict the existence of metallicity in monolayer boron. Here, we synthesize the \b{eta}12-sheet monolayer boron on a Ag(111) surface and confirm the presence of metallic boron-derived bands using angle-resolved photoemission spectroscopy. The Fermi surface is composed of one electron pocket at the S point and a pair of hole pockets near the X point, which is supported by the first-principles calculations. The metallic boron allotrope in \b{eta}12 sheet opens the way to novel physics and chemistry in material science.

cond-mat.mtrl-sci↗

Experimental Realization of Two-Dimensional Boron Sheets

Boron is the fifth element in the periodic table and possesses rich chemistry second only to carbon. A striking feature of boron is that B12 icosahedral cages occur as the building blocks in bulk boron and many boron compounds. This is in contrast to its neighboring element, carbon, which prefers 2D layered structure (graphite) in its bulk form. On the other hand, boron clusters of medium size have been predicted to be planar or quasi-planar, such as B12+ , B13+, B19-, B36, and so on. This is also in contrast to carbon clusters which exhibit various cage structures (fullerenes). Therefore, boron and carbon can be viewed as a set of complementary chemical systems in their bulk and cluster structures. Now, with the boom of graphene, an intriguing question is that whether boron can also form a monoatomic-layer 2D sheet structure? Here, we report the first successful experimental realization of 2D boron sheets. We have revealed two types of boron sheet structures, corresponding to a triangular boron lattice with different arrangements of the hexagonal holes. Moreover, our boron sheets were found to be relatively stable against oxidization, and interacts only weekly with the substrate. The realization of such a long expected 2D boron sheet could open a door toward boron electronics, in analogous to the carbon electronics based on graphene.

cond-mat.mes-hall↗

Observation of van Hove Singularities in Twisted Silicene Multilayers

Interlayer interactions perturb the electronic structure of two-dimensional materials and lead to new physical phenomena, such as van Hove singularities and Hofstadter's butterfly pattern. Silicene, the recently discovered two-dimensional form of silicon, is quite unique, in that silicon atoms adopt competing sp 2 and sp 3 hybridization states leading to a low-buckled structure promising relatively strong interlayer interaction. In multilayer silicene, the stacking order provides an important yet rarely explored degree of freedom for tuning its electronic structures through manipulating interlayer coupling. Here, we report the emergence of van Hove singularities in the multilayer silicene created by an interlayer rotation. We demonstrate that even a large-angle rotation (> 20 o ) between stacked silicene layers can generate a Moire pattern and van Hove singularities due to the strong interlayer coupling in multilayer silicene. Our study suggests an intriguing method for expanding the tunability of the electronic structure for electronic applications in this two-dimensional material.

cond-mat.mtrl-sci↗

From Silicene to Half-Silicane by Hydrogenation

Graphane is graphene fully hydrogenated from both sides, forming a 1x1 structure, where all C atoms are in sp3 configuration. In silicene, the Si atoms are in a mix-sp2/sp3 configuration, it is therefore natural to imagine silicane in analogue to graphane. However, monoatomic silicene sheet grown on substrates generally reconstructs into different phases, and only partially hydrogenated silicene with reconstructions had been reported before. In this report we produce half-silicane, where one Si sublattice is fully H-saturated and the other sublattice is intact, forming a perfect 1x1 structure. By hydrogenating various silicene phases on Ag(111) substrate, we found that only the (2r3x2r3)R30° phase can produce half-silicane. Interestingly, this phase was previous considered to be a highly defective or incomplete silicene structure. Our results indicate that the structure of (2r3x2r3)R30° phase involves a complete silicene-1x1 lattice instead of defective fragments, and the formation mechanism of half-silicane was discussed with the help of first principles calculations.

cond-mat.mtrl-sci↗

Structure and Quantum Well States in Silicene Nanoribbons on Ag(110)

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) study and first-principles calculations to investigate the atomic structure and electronic properties of silicon nanoribbons (SiNRs) grown on Ag(110). Despite of the extensive research on SiNRs in the last decades, its atomic structure is still not fully understood so far. In this report we determine that the structure of SiNRs/Ag(110) is armchair silicene nanoribbon with reconstructed edges. Meanwhile, pronounced quantum well states (QWS) in SiNRs were observed and their energy spectrum was systematically measured. The QWS are due to the confinement of quasiparticles perpendicular to the nanoribbon and can be well explained by the theory of one-dimensional (1D) 'particle-in-a-box' model in quantum mechanics.

cond-mat.mtrl-sci↗

Direct Evidence of Interaction-Induced Dirac Cones in Monolayer Silicene/Ag(111) System

Silicene, analogous to graphene, is a one-atom-thick two-dimensional crystal of silicon which is expected to share many of the remarkable properties of graphene. The buckled honeycomb structure of silicene, along with its enhanced spin-orbit coupling, endows silicene with considerable advantages over graphene in that the spin-split states in silicene are tunable with external fields. Although the low-energy Dirac cone states lie at the heart of all novel quantum phenomena in a pristine sheet of silicene, the question of whether or not these key states can survive when silicene is grown or supported on a substrate remains hotly debated. Here we report our direct observation of Dirac cones in monolayer silicene grown on a Ag(111) substrate. By performing angle-resolved photoemission measurements on silicene(3x3)/Ag(111), we reveal the presence of six pairs of Dirac cones on the edges of the first Brillouin zone of Ag(111), other than expected six Dirac cones at the K points of the primary silicene(1x1) Brillouin zone. Our result shows clearly that the unusual Dirac cone structure originates not from the pristine silicene alone but from the combined effect of silicene(3x3) and the Ag(111) substrate. This study identifies the first case of a new type of Dirac Fermion generated through the interaction of two different constituents. Our observation of Dirac cones in silicene/Ag(111) opens a new materials platform for investigating unusual quantum phenomena and novel applications based on two-dimensional silicon systems.

cond-mat.mtrl-sci↗

Variable Coupling Strength of Silicene on Ag(111)

We performed a scanning tunneling microscopy and spectroscopy (STM/STS) study on the electronic structures of of root(3)Xroot(3)-silicene on Ag(111). We find that the coupling strength of root(3)Xroot(3)-silicene with Ag(111) substrate is variable at different regions, giving rise to notable effects in experiments. These evidences of decoupling or variable interaction of silicene with the substrate are helpful to in-depth understanding of the structure and electronic properties of silicene.

cond-mat.mtrl-sci↗

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

In this letter, we report that the special coupling between Dirac fermion and lattice vibrations, in other words, electron-phonon coupling (EPC), in silicene layers on Ag(111) surface was probed by an in-situ Raman spectroscopy. We find the EPC is significantly modulated due to tensile strain, which results from the lattice mismatch between silicene and the substrate, and the charge doping from the substrate. The special phonon modes corresponding to two-dimensional electron gas scattering at edge sites in the silicene were identified. Detecting relationship between EPC and Dirac fermion through the Raman scattering will provide a direct route to investigate the exotic property in buckled two-dimensional honeycomb materials.

cond-mat.mtrl-sci↗