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Lanqing Zhou

Publications and source records attributed to Lanqing Zhou.

2 recordsLinked to original sources

Polarization of photoluminescence by optically driven orbital reconstruction in magnetically ordered CrCl3

Control of magnetic order through optical manipulation of orbital states can be realized in a wide range of materials, including insulators. In the latter case, electrons are excited into different electronic states, whose character may be a complex result of spin-orbit-lattice coupling. Here, we use a combination of polarization-resolved photoluminescence spectroscopy and density functional theory calculations to study excited Cr3+ ions in bulk, insulating antiferromagnetic CrCl3. Our results demonstrate a temperature-dependent preferential polarization direction below ~17 K, which reorients in the presence of an applied in-plane magnetic field. Density functional theory calculations reveal a local distortion of the ligand field and the generation of out-of-plane spin and orbital moments, following Cr3+ ion excitation. These changes link the photoluminescence polarization to the magnetic state of CrCl3. Our findings provide insight into the excited-state electronic structure of Cr3+ ions and suggest that CrCl3 is a promising candidate for opto-orbitronic applications.

cond-mat.mtrl-sci

Optical properties of MoSe$_2$ monolayer implanted with ultra-low energy Cr ions

The paper explores the optical properties of an exfoliated MoSe$_2$ monolayer implanted with Cr$^+$ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe$_2$ reveals an emission line from Cr-related defects that is present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterised by non-zero activation energy, long lifetimes, and weak response to the magnetic field. To rationalise the experimental results and get insights into the atomic structure of the defects, we modelled the Cr-ion irradiation process using ab-initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of 2D materials by doping.

cond-mat.mtrl-sci