arXiv subjects

Lars Sjöström

Publications and source records attributed to Lars Sjöström.

6 recordsLinked to original sources

arXiv2026

Revealing quantum metric multipoles in magnetic topological insulator MnBi2Te4

Nonlinear electronic transport has emerged as a powerful probe of the quantum geometry in topological quantum materials, where the band topology and broken symmetries facilitate power law current voltage responses beyond Ohms law. While nonlinear transport of the second and third orders has been studied in several quantum materials, higher-order transport has so far mainly remained experimentally inaccessible, leaving more detailed features of the quantum geometry unexplored. Here, we observe higher order nonlinear electronic transport up to the seventh harmonic order in multilayer magnetic topological insulator MnBi2Te4. We find an even-odd behavior where the odd order nonlinear transport components dominate while the even-order ones are suppressed. Temperature and magnetic field dependent measurements show a strong correlation between the nonlinear transport and the magnetic phases of MnBi2Te4. Through scaling analysis and theoretical calculations, quantum metric multipoles and nonlinear Drude conductivities are identified as the microscopic origins of the nonlinear transport.

cond-mat.mes-hall↗

arXiv2025

Spin-Texture Spin-valve with a van der Waals Magnet

All-electrical methods for nucleating, detecting, and manipulating spin textures in two-dimensional (2D) van der Waals (vdW) magnets can serve as fundamental building blocks for multi-state spintronic memory, logic, and neuromorphic computing applications. Unlike conventional ferromagnets, vdW ferromagnets such as Fe5GeTe2 with strong Dzyaloshinskii-Moriya interactions stabilize nanoscale chiral spin textures, including skyrmions and stripe domains. However, the sub-100 nm size of these spin textures has limited their study to sophisticated microscopy techniques. Here, we demonstrate all-electrical detection of spin textures in vdW itinerant ferromagnet Fe5GeTe2 using pure spin transport in a lateral graphene spin-valve device at room temperature. By engineering nanoscale constrictions or notches in Fe5GeTe2, we create spin textures that inject distinct spin polarizations into the graphene channel, where they are nonlocally sensed by a reference conventional ferromagnetic detector at room temperature. This enables the observation of anomalous multi-level spin-valve switching and Hanle spin precession signals, which are due to unique spin textures in Fe5GeTe2 and in sharp contrast to single-domains and conventional magnet-based devices. This all-electrical approach can provide direct access to the spin textures on an integrated 2D spintronic circuit without the need for ex-situ microscopic characterizations.

cond-mat.mes-hall↗

arXiv2025

Energy-efficient field-free unconventional spin-orbit torque magnetization switching dynamics in van der Waals heterostructures

Van der Waals (vdW) heterostructure of two-dimensional (2D) quantum materials offers a promising platform for efficient control of magnetization dynamics for non-volatile spin-based devices. However, energy-efficient field-free spin-orbit torque (SOT) switching and spin dynamics experiments to understand the basic SOT phenomena in all-2D vdW heterostructures are so far lacking. Here, we demonstrate energy-efficient field-free spin-orbit torque (SOT) switching and tunable magnetization dynamics in a vdW heterostructure comprising out-of-plane magnet Fe3GaTe2 and topological Weyl semimetal TaIrTe4. We measured the non-linear second harmonic Hall signal in TaIrTe4 /Fe3GaTe2 devices to evaluate the SOT-induced magnetization dynamics, which is characterized by a large and tunable out-of-plane damping-like torque. Energy-efficient and deterministic field-free SOT magnetization switching is achieved at room temperature with a very low current density. First-principles calculations unveil the origin of the unconventional charge-spin conversion phenomena, considering the crystal symmetry and electronic structure of TaIrTe4. These results establish that all-vdW heterostructures provide a promising route to energy-efficient, field-free, and tunable SOT-based spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Room temperature nonlocal detection of charge-spin interconversion in a topological insulator

Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the spin-Hall effect (SHE), and Rashba states due to high spin-orbit coupling (SOC) properties. These phenomena are vital for observing the charge-spin conversion (CSC) processes for spin-based memory, logic and quantum technologies. Although CSC has been observed in TIs by potentiometric measurements, reliable nonlocal detection has so far been limited to cryogenic temperatures up to T = 15 K. Here, we report nonlocal detection of CSC and its inverse effect in the TI compound Bi1.5Sb0.5Te1.7Se1.3 at room temperature using a van der Waals heterostructure with a graphene spin-valve device. The lateral nonlocal device design with graphene allows observation of both spin-switch and Hanle spin precession signals for generation, injection and detection of spin currents by the TI. Detailed bias- and gate-dependent measurements in different geometries prove the robustness of the CSC effects in the TI. These findings demonstrate the possibility of using topological materials to make all-electrical room-temperature spintronic devices.

cond-mat.mes-hall↗

arXiv2023

Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature

Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, most of the vdW magnet based spintronic devices are so far limited to cryogenic temperatures with magnetic anisotropies favouring out-of-plane or canted orientation of the magnetization. Here, we report room-temperature lateral spin-valve devices with strong in-plane magnetic anisotropy of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Magnetization measurements reveal above room-temperature ferromagnetism in CFGT with a strong in-plane magnetic anisotropy. Density functional theory calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices such as efficient spin injection and detection. The spin transport and Hanle spin precession measurements prove a strong in-plane and negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus opening further opportunities for spintronic technologies.

cond-mat.mes-hall↗

arXiv2023

Large out-of-plane spin-orbit torque in topological Weyl semimetal candidate TaIrTe4

Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque materials, such as heavy metals and topological insulators, provide only an in-plane spin polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin polarized current components, which is not suitable for energy-efficient spin-orbit torque (SOT) applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using a topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-orbit torque ferromagnetic resonance (STFMR) experiments in a TaIrTe4/Ni80Fe20 heterostructure and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be an order of magnitude higher than the reported values in other materials. These findings of high spin Hall conductivity and large out-of-plane SOT efficiency are suitable for the development of energy efficient and external field-free spintronic devices.

cond-mat.mes-hall↗