arXiv subjects

Lars Tiemann

Publications and source records attributed to Lars Tiemann.

16 recordsLinked to original sources

arXiv2024

Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices

MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS2 depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to and the determine the g-factor in micron-scale devices However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS2. Here, we exploit naturally n-doped few-layer MoS2 devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS2 devices. Using RD-ESR, we determine the g-factor of few-layer MoS2 to be ~1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.

cond-mat.mes-hall↗

arXiv2023

Addressing the spin-valley flavors in moir'e mini-bands of MoS2

The physics of moir'e superlattices and the resulting formation of mini-bands in van der Waals materials have opened up an exciting new field in condensed matter physics. These systems exhibit a rich phase diagram of novel physical phenomena and exotic correlated phases that emerge in the low-dispersing bands. Transition metal dichalcogenides, in particular, molybdenum disulfide (MoS2), are potential candidates to extend the studies on moir'e electronics beyond graphene. Our transport spectroscopy measurements and analysis reveal a correlation-driven phase transition and the emergence of discrete mini-bands in MoS2 moir'e superlattices that remained elusive so far. We resolve these mini-bands arising from quantum mechanical tunneling through Schottky barriers between the MoS2 and its metallic leads. Energy scales deduced from a first approach exhibit an astounding agreement with our experimental observations. The behavior under thermal activation suggests a Lifshitz phase transition at low temperatures that is driven by a complete spin-valley symmetry breaking. These intriguing observations bring out the potential of twisted MoS2 to explore correlated electron states and associated physics.

cond-mat.mes-hall↗

arXiv2022

Acoustically Induced Giant Synthetic Hall Voltages in Graphene

Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in non-local experiments using a large planar graphene sheet that conforms to the deformation of a piezoelectric layer by a surface acoustic wave. The acoustic wave induces a longitudinal and a giant synthetic Hall voltage in the absence of external magnetic fields. The superposition of a synthetic Hall potential and a conventional Hall voltage can annihilate the sample's transversal potential at large external magnetic fields. Surface acoustic waves thus provide a promising and facile avenue for the exploit of gauge fields in large planar graphene systems.

cond-mat.mes-hall↗

arXiv2022

Comment on "Electron spin resonance and collective excitations in magic-angle twisted bilayer graphene"

This comment pertains the recent manuscript by Morissette {\it et al.} [arXiv:2206.08354v1]. The authors claim to have found signatures of collective excitations in electron spin resonance experiments that would be linked to the correlated structure of magic angle bilayer graphene. However, identical resonance features have already been reported in previous works on mono- and few-layer graphene, voiding their theoretical framework. A straight forward theoretical picture within the single-particle topologically non-trivial band structure of graphene delivers satisfactory explanations for the observation of the resonant features and applies as well to the data presented by Morissette {\it et al.}. However, this intuitive picture has been disregarded by the authors.

cond-mat.mes-hall↗

arXiv2022

Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure

Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5K. The electron spin resonance measurements are performed in the frequency range of 18-33GHz, which allows us to determine the g-factor in the system. We measure average g-factor of 1.91 for our hybrid system which is a considerable shift compared to what is observed in graphene on SiO2. This is a clear indication of proximity induced SOC in graphene in accordance with theoretical predictions.

cond-mat.mes-hall↗

arXiv2022

Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified $^{13}$C graphene

The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to search for interaction effects between the nuclear magnetic moments and the electronic system. We find signatures of nuclei with a spin in the analysis of the weak localization phenomenon that shows a significant dichotomy in the scattering times of monolayer $^{12}$C and $^{13}$C graphene close the Dirac point. Microwave-induced electron spin flips were exploited to transfer momentum to the nuclei and build-up a nuclear field. The presence of a very weak nuclear field is encoded in a modulation of the electron Zeeman energy which shifts the energy for resonant absorption and reduces the $g$-factor.

cond-mat.mes-hall↗

arXiv2021

Polarization amplification by spin-doping in nanomagnetic/graphene hybrid systems

The generation of non-equilibrium electron spin polarization, spin transport, and spin detection are fundamental in many quantum devices. We demonstrate that a lattice of magnetic nanodots enhances the electron spin polarization in monolayer graphene via carrier exchange. We probed the spin polarization through a resistively-detected variant of electron spin resonance (ESR) and observed resonance amplification mediated by the presence of the nanodots. Each nanodot locally injects a surplus of spin-polarized carriers into the graphene, and the ensemble of all "spin hot spots" generates a non-equilibrium electron spin polarization in the graphene layer at macroscopic lengths. This occurs whenever the interdot distance is comparable or smaller than the spin diffusion length.

cond-mat.mes-hall↗

arXiv2020

Dirac imprints on the $g$-factor anisotropy in graphene

Dirac electrons in graphene are to lowest order spin 1/2 particles, owing to the orbital symmetries at the Fermi level. However, anisotropic corrections in the $g$-factor appear due to the intricate spin-valley-orbit coupling of chiral electrons. We resolve experimentally the $g$-factor along the three orthogonal directions in a large-scale graphene sample. We employ a Hall bar structure with an external magnetic field of arbitrary direction, and extract the effective $g$-tensor via resistively-detected electron spin resonance. We employ a theoretical perturbative approach to identify the intrinsic and extrinsic spin orbit coupling and obtain a fundamental parameter inherent to the atomic structure of $^{12}$C, commonly used in ab-initio models.

cond-mat.mes-hall↗

arXiv2020

Development, Processing and Applications of a UV-Curable Polymer with Surface Active Thiol Groups

We present here a novel resist formulation with active thiol groups at the surface. The material is UV curable, and can be patterned at the micro- and nanoscale by UV nanoimprint lithography. The resist formulation development, its processing, patterning and surface characterization are presented here. In addition, a possible application, including its use to modify the electrical properties of graphene devices is shown. The cured material is highly transparent, intrinsically hydrophilic and can be made more hydrophilic following a UV-ozone or an O2 plasma activation. We evaluated the hydrophilicity of the polymer for different polymer formulations and curing conditions. In addition, a protocol for patterning of the polymer in the micro and nanoscale by nanoimprinting is given and preliminary etching rates together with the polymer selectivity are measured. The main characteristic and unique advantage of the polymer is that it has thiol functional groups at the surface and in the bulk after curing. These groups allow for direct surface modifications with thiol-based chemistry e.g., thiol-ene reactions. We prove the presence of the thiol groups by Raman spectroscopy and perform a thiol-ene reaction to show the potential of the easy click chemistry. This opens the way for very straightforward surface chemistry on nanoimprinted polymer samples. Furthermore, we show how the polymer improves the electrical properties of a graphene field effect transistor, allowing for optimal performance at ambient conditions.

cond-mat.mtrl-sci↗

arXiv2019

Acoustically driven Dirac electrons in monolayer graphene

We demonstrate the interaction between surface acoustic waves and Dirac electrons in monolayer graphene at low temperatures and high magnetic fields. A metallic interdigitated transducer launches surface waves that propagate through a conventional piezoelectric GaAs substrate and couple to large-scale monolayer CVD graphene films resting on its surface. Based on the induced acousto-electric current, we characterize the frequency domains of the transducer from its first to the third harmonic. We find an oscillatory attenuation of the SAW velocity depending on the conductivity of the graphene layer. The acousto-electric current reveals additional fine structure that is absent in pure magnetotransport. In addition we find a shift between the acousto-electric longitudinal voltage and the velocity change of the SAW. We attribute this shift to the periodic strain field from the propagating SAW that slightly modifies the Dirac cone.

cond-mat.mes-hall↗

arXiv2018

Intrinsic spin-orbit coupling gap and the evidence of a topological state in graphene

In 2005 Kane & Mele[C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)], predicted that at sufficiently low energy, graphene exhibits a topological state of matter with an energy gap generated by the atomic spin-orbit interaction. However, this intrinsic gap has not been measured to this date. In this letter, we exploit the chirality of the low energy states to resolve this gap. We probe the spin states experimentally, by employing low temperature microwave excitation in a resistively detected electron spin resonance on graphene. The structure of the topological bands is reflected in our transport experiments, where our numerical models allow us to identify the resonance signatures. We determine the intrinsic spin-orbit bulk gap to be exactly 42.2 μeV. Electron-spin resonance experiments can reveal the competition between the intrinsic spin-orbit coupling and classical Zeeman energy that arises at low magnetic fields and demonstrate that graphene remains to be a material with surprising properties.

cond-mat.mes-hall↗

arXiv2016

Improvement of the transport properties of a high-mobility electron system by intentional parallel conductance

We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can study the impact of mobile charge carriers in the vicinity of the dopant layer on the properties of the two-dimensional electron system. It is found that the parallel conducting layer is indeed capable to screen the remote ionized impurity potential fluctuations responsible for the fragility of fractional quantum Hall states.

cond-mat.mes-hall↗

arXiv2016

On the impact of strain on the electronic properties of InAs/GaSb quantum well systems

Electron-hole hybridization in InAs/GaSb double quantum well structures leads to the formation of a mini band gap. We experimentally and theoretically studied the impact of strain on the transport properties of this material system. Thinned samples were mounted to piezo electric elements to exert strain along the [011] and [001] crystal directions. When the Fermi energy is tuned through the mini gap, a dramatic impact on the resistivity at the charge neutrality point is found which depends on the amount of applied external strain. In the electron and hole regimes, strain influences the Landau level structure. By analyzing the intrinsic strain from the epitaxial growth, the external strain from the piezo elements and combining our experimental results with numerical simulations of strained and unstrained quantum wells, we compellingly illustrate why the InAs/GaSb material system is regularly found to be semimetallic.

cond-mat.str-el↗

arXiv2016

Non-local polarization feedback in a fractional quantum Hall ferromagnet

In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a non-local effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a $ν=2/3$ fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

cond-mat.mes-hall↗

arXiv2016

Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation

We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.

cond-mat.mes-hall↗

arXiv2012

Unraveling the spin polarization of the v = 5/2 fractional quantum Hall state

The fractional quantum Hall (FQH) effect at filling factor v = 5/2 has recently come under close scrutiny, as it may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum operations. Yet, its microscopic origin remains unidentified, and candidate model wave functions include those with undesirable abelian statistics. Here we report direct measurements of the electron spin polarization of the v = 5/2 FQH state using resistively detected nuclear magnetic resonance (NMR). We find the system to be fully polarized, which unambiguously rules out the most-likely abelian contender and thus lends strong support for the v = 5/2 state being nonabelian. Our measurements reveal an intrinsically different nature of interaction in the first-excited Landau level underlying the physics at v = 5/2.

cond-mat.mes-hall↗