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Laurent Daniel

Publications and source records attributed to Laurent Daniel.

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A Boltzmann statistical approach for the analysis of polarization states in mixed phase ferroelectric materials: application to morphological phase boundary

Ferroelectrics are widely used for a broad array of technological applications due to their attractive electrical and electromechanical properties. In order to obtain large functional properties, material compositions are often designed to favor a coexistence of multiple ferroelectric phases. For such compositions, the macroscopically observed properties are variously attributed to easier domain switching and/or phase transition. Nevertheless, modelling of concurrent domain switching and phase transition in mixed phase ferroelectrics remains a challenging task. Here, a methodology is presented to quantitatively evaluate the volume fractions of different domain variants in a mixed phase ferroelectric under complex electromechanical loading. The methodology combines the phenomenology of Landau free energy of ferroelectric phases with Boltzmann statistical analysis, and is presented for Pb(Zr,Ti)O3 near morphotropic phase boundary (MPB). It is shown that specific grain orientation has a significant effect on how proximity to phase boundary affects microscopic phenomena at the single-crystal level. An estimate of phase and domain switching behavior in a polycrystalline aggregate is subsequently obtained, and the resultant polarization and strain responses at the macroscopic level are computed for a material with random texture. The results indicate the progressive evolution of domain and phase fractions in a material near MPB with mixed ferroelectric phases. We show that in polycrystalline materials with compositions slightly on the tetragonal side of MPB, grains that exhibit large 90 domain switching have a larger contribution to the macroscopic strain response as compared to grains that undergo tetragonal-to-rhombohedral phase-switching.

cond-mat.mtrl-sci

Electric field control of domain wall logic in piezoelec-tric/ferromagnetic nanodevices

Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an electric field in a nanowire consisting of a laterally polarized piezoelectric bar inducing a giant strain in a ferromagnetic spin-valve. We propose to use such novel domain wall gate as an elementary brick to generate a complete set of boolean logic functions or stabilize domain walls in high density memory applications.

cond-mat.mtrl-sci